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July 2002
STS6DNF30V
DUAL N-CHANNEL 30V - 0.026
- 6A SO-8
2.5V-DRIVE STripFETTM II POWER MOSFET
s
TYPICAL R
DS
(on) = 0.026
(@4.5V)
s
TYPICAL R
DS
(on) = 0.030
(@2.5V)
s
ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size
TM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
s
BATTERY SAFETY UNIT IN NOMADIC
EQUIPMENT
s
DC-DC CONVERTERS
s
POWER MANAGEMENT IN PORTABLE/
DESKTOP PC
S
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STS6DNF30V
30 V
<0.030
(@4.5V)
<0.038
(@2.5V)
6 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
12 V
I
D
Drain Current (continuos) at T
C
= 25C
Single Operation
Drain Current (continuos) at T
C
= 100C
Single Operation
6
3.8
A
A
I
DM
(
l
)
Drain Current (pulsed)
24
A
P
TOT
Total Dissipation at T
C
= 25C Dual Operation
Total Dissipation at T
C
= 25C Single Operation
2
1.6
W
W
SO-8
INTERNAL SCHEMATIC DIAGRAM
STS6DNF30V
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-amb
Thermal Resistance Junction-ambient Max Single Operation
Thermal Resistance Junction-ambient Max Dual Operation
78
62.5
C/W
C/W
T
j
Max. Operating Junction Temperature
150
C
T
stg
Storage Temperature
65 to 150
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 12V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
0.6
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 4.5 V, I
D
= 3 A
0.026
0.030
V
GS
= 2.5 V, I
D
= 3 A
0.030
0.038
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 3 A
15
S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
800
pF
C
oss
Output Capacitance
180
pF
C
rss
Reverse Transfer
Capacitance
32
pF
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STS6DNF30V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V, I
D
= 3 A
R
G
= 4.7
V
GS
= 2.5V
(see test circuit, Figure 3)
20
ns
t
r
Rise Time
25
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 15 V, I
D
= 6 A,
V
GS
= 2.5 V
6.8
2
3.4
9.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 10 V, I
D
= 3 A,
R
G
= 4.7
,
V
GS
= 2.5 V
(see test circuit, Figure 3)
32
13
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
6
A
I
SDM
(2)
Source-drain Current (pulsed)
24
A
V
SD
(1)
Forward On Voltage
I
SD
= 6 A, V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 6 A, di/dt = 100A/s,
V
DD
= 15 V, T
j
= 150C
(see test circuit, Figure 5)
25
21
1.7
ns
nC
A
Safe Operating Area
Thermal Impedance
STS6DNF30V
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Transconductance
Transfer Characteristics
Gate Charge vs Gate-source Voltage
Capacitance Variations
Static Drain-source On Resistance
Output Characteristics
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STS6DNF30V
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
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