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PRELIMINARY DATA
December 2002
STS7PF30L
P-CHANNEL 30V - 0.016
- 7A SO-8
STripFETTM II POWER MOSFET
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
s
TYPICAL R
DS
(on) = 0.016
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique "Single Feature Size
TM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN CELLULAR
PHONES
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STS7PF30L
30 V
< 0.021
7 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
20
V
I
D
Drain Current (continuous) at T
C
= 25C
7
A
I
D
Drain Current (continuous) at T
C
= 100C
4.4
A
I
DM
Drain Current (pulsed)
28
A
P
TOT
Total Dissipation at T
C
= 25C
2.5
W
SO-8
INTERNAL SCHEMATIC DIAGRAM
STS7PF30L
2/6
THERMAL DATA
(#) When mounted on 1 inch
2
FR4 Board, 2 oz of Cu and t
10s
ELECTRICAL CHARACTERISTICS (T
J
= 25 C UNLESS OTHERRWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-amb(#)
Thermal Resistance Junction-ambient Max
50
C/W
Tj
Maximum Lead Temperature For Soldering Purpose Typ
150
C
T
stg
Storage Temperature
55 to 150
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
1.6
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 3.5A
0.011
0.016
0.021
V
GS
= 4.5V, I
D
= 3.5A
0.016
0.022
0.028
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
= 10V, I
D
= 3.5A
16
S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
2600
pF
C
oss
Output Capacitance
523
pF
C
rss
Reverse Transfer
Capacitance
174
pF
3/6
STS7PF30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON(2)
SWITCHING OFF(2)
SOURCE DRAIN DIODE (2)
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15V, I
D
= 3.5A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, Figure 3)
68
ns
t
r
Rise Time
54
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=15 V, I
D
= 7 A,
V
GS
= 4.5V
28
8.8
12
38
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
=15 V, I
D
= 3.5 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(Resistive Load, Figure 3)
65
23
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
7
A
I
SDM
(1)
Source-drain Current (pulsed)
28
A
V
SD
(2)
Forward On Voltage
I
SD
= 7 A, V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 7A, di/dt = 100A/s,
V
DD
= 24 V, T
j
= 150C
(see test circuit, Figure 5)
40
46
2.3
ns
nC
A
STS7PF30L
4/6
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
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STS7PF30L
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
1.75
0.068
a1
0.1
0.25
0.003
0.009
a2
1.65
0.064
a3
0.65
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
0.6
0.023
S
8 (max.)
0016023
SO-8 MECHANICAL DATA
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