STS8NFS30L
N - CHANNEL 30V - 0.018
- 8A S0-8
STripFET
TM
MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTION:
This product associates the latest low voltage
StripFET
TM
in n-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-
DC converters for printers, portable equipment,
and cellular phones.
December 1999
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
Uni t
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gat e Voltage (R
G S
= 20 k
)
30
V
V
G S
Gat e-source Voltage
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
8
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
5
A
I
DM
(
)
Drain Current (pulsed)
32
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
2. 5
W
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
R
DS(on )
I
D
30 V
<0.022
8 A
SCHOTTKY
I
F (A V)
V
RRM
V
F(M AX)
3 A
30 V
0.51 V
SO-8
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Un it
V
RRM
Repetitive Peak Reverse Voltage
30
V
I
F(RMS)
RMS Forward Current
20
A
I
F (AV)
Average F orward Current
T
L
=125
o
C
=0.5
3
A
I
FSM
Surge Non Repetit ive Forward Current
tp= 10 ms
Sinusoidal
75
A
I
RSM
Non Repetitive Peak Reverse Current
tp=100
s
1
A
dv/dt
Critical Rat e Of Rise Of Reverse Voltage
10000
V/
s
(
) Pulse width limited by safe operating area
1/8
THERMAL DATA
R
thj -amb
R
thj -amb
T
s tg
T
j
(*) Thermal Resistance Junction-ambient MOSFET
(*) Thermal Resistance Junct ion-ambientSCHOT TKY
Storage T emperature Range
Maximum
Junction Temperat ure
(*)
mounte d on FR-4 board (ste ady st at e)
50
100
-65 to 150
150
o
C/W
o
C/W
o
C
o
C
MOSFET ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
30
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
1.6
2. 5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
I
D
= 4 A
V
GS
= 4. 5V
I
D
= 4 A
0.018
0.021
0.022
0.026
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
8
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
=4 A
10
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1050
250
85
pF
pF
pF
STS8NFS30L
2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay T ime
Rise Time
V
DD
= 15 V
I
D
= 4 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, see fig. 3)
22
60
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 24 V
I
D
= 8 A
V
GS
= 4.5 V
17.5
4
7
23
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(of f)
t
f
Turn-off Delay T ime
Fall T ime
V
DD
= 15 V
I
D
= 4 A
R
G
= 4.7
V
GS
= 4.5 V
(Resistive Load, see fig. 3)
42
10
ns
ns
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 24 V
I
D
= 8 A
R
G
= 4.7
V
GS
= 4.5 V
(Induct ive Load, see fig. 5)
11
12
25
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
8
32
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 8 A
V
GS
= 0
2
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 8 A
di/dt = 100 A/
s
V
DD
= 20 V
T
j
= 150
o
C
(see t est circuit, f igure 5)
50
40
1.6
ns
nC
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
R
(
)
Reversed Leakage
Current
T
J
= 25
o
C
V
R
=30V
T
J
= 125
o
C
V
R
=30V
0.03
0. 2
100
mA
mA
V
F
(
)
Forward Voltage drop
T
J
= 25
o
C
I
F
=3A
T
J
= 125
o
C
I
F
=3A
0.38
0.51
0.46
V
V
STS8NFS30L
3/8
Safe Operating Area
Output Characteristics
Transconductance
Thermal Impedance
Transfer Characteristics
Static Drain-source On Resistance
STS8NFS30L
4/8
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STS8NFS30L
5/8
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