STT4NF30L
N - CHANNEL 30V - 0.055
- 4A - TSOP-6
STripFET
TM
MOSFET
PRELIMINARY DATA
s
TYPICAL R
DS(on)
= 0.055
s
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics
unique
"Single
Feature
Size
TM
" strip-based process.The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR DRIVE
s
DC-DC CONVERTERS
s
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s
POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
30
V
V
GS
G ate-source Volt age
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
4
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
2.5
A
I
DM
(
)
Drain Current (pulsed)
16
A
P
tot
T otal Dissipat ion at T
c
= 25
o
C
2
W
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STT4NF 30L
30 V
< 0.065
4 A
November 1998
TSOP-6
1/5
THERMAL DATA
R
thj -amb
T
J
T
s tg
(*)Thermal Resist ance Junction-ambient
Max
Maximum O perat ing Junction Temperature
Storage T emperature
62.5
150
-55 to 150
o
C/W
o
C
o
C
(*) Mounted on FR-4 board (t
5 sec)
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
30
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
1
1.7
2. 5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
I
D
= 2 A
V
GS
= 4. 5V I
D
= 2 A
0.055
0.06
0.065
0.09
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
4
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
=6 A
6
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
420
62
20
550
80
30
pF
pF
pF
STT4NF30L
2/5
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V
I
D
= 2 A
R
G
=4.7
V
GS
= 4.5 V
(see t est circuit, f igure 3)
13
30
17
40
ns
ns
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 24 V
I
D
= 4 A
V
GS
= 4.5 V
8
3.2
2.6
12
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 24 V
I
D
= 4 A
R
G
=4.7
V
GS
= 4. 5 V
(see t est circuit, f igure 5)
6
9
20
8
12
26
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
4
16
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 4 A
V
GS
= 0
1. 2
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 4 A
di/dt = 100 A/
s
V
DD
= 15 V
T
j
= 150
o
C
(see t est circuit, f igure 5)
22
13
1.2
ns
nC
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STT4NF30L
3/5
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STT4NF30L
4/5
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5/5
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