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March 2003
STT5NF30L
N-CHANNEL 30V - 0.039
- 4A SOT23-6L
STripFETTMII POWER MOSFET
TYPICAL R
DS
(on) = 0.039
@10V
LOW Q
g
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
DC-DC CONVERTERS
POWER MANAGEMENT IN PORTABLE/
DESKTOP PCs
SYNCHRONOUS RECTIFICATION
DC MOTOR CONTROL (DISK DRIVERS, etc)
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
STT5NF30L
30 V
< 0.050
(@ 10V)
4 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STT5NF30L
STFN
SOT23-6L
TAPE & REEL
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
STT5NF30L
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ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
(1) Starting T
j
=25
C,
I
d
= 2 A, V
DD
= 15V
.
THERMAL DATA
ON/OFF
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
16
V
I
D
Drain Current (continuous) at T
C
= 25C
4
A
I
D
Drain Current (continuous) at T
C
= 100C
2.5
A
I
DM
( )
Drain Current (pulsed)
16
A
P
TOT
Total Dissipation at T
C
= 25C
1.6
W
E
AS
(1)
Single Pulse Avalanche Energy
50
mJ
Rthj-amb
Thermal Resistance Junction-ambient
Max
78
C/W
T
l
Max. Operating Junction Temperature
- 55 to 150
C
T
stg
Storage Temperature
- 55 to 150
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 16V
100
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 2 A
V
GS
= 5 V, I
D
= 2 A
0.039
0.046
0.050
0.060
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STT5NF30L
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 10 V
,
I
D
= 2 A
3
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
330
90
40
pF
pF
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V, I
D
= 2 A
R
G
= 4.7
V
GS
= 4.5 V
(see test circuit, Figure 3)
11
100
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 24 V, I
D
= 4 A,
V
GS
= 5 V
6.5
3.6
2
9
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
V
DD
= 15 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(see test circuit, Figure 5)
25
22
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
4
16
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 4 A, V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 4 A, di/dt = 100 A/s,
V
DD
= 20 V, T
j
= 150C
(see test circuit, Figure 5)
35
25
14
ns
nC
A
STT5NF30L
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Thermal Impedence Junction-PCB
Safe Operating Area
Output Characteristics
Static Drain-source On Resistance
Transfer Characteristics
Transconductance
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STT5NF30L
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Gate Charge vs Gate-source Voltage
Capacitance Variations
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