ChipFind - документация

Электронный компонент: STTA3006CW

Скачать:  PDF   ZIP
SPECIFICTO "FREEWHEEL MODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST AND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
FEATURES AND BENEFITS
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
control freewheel applicationsand in booster diode
applications in power factor control circuitries.
Packaged either in TO-247 or SOT93, these 600V
devices are particularly intended for use on 240V
domestic mains.
DESCRIPTION
I
F(AV)
2 x 15A
V
RRM
600V
t
rr
(typ)
35ns
V
F
(max)
1.6V
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
V
RSM
Non repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
30
A
I
FRM
Repetitive peak forward current
tp = 5
s F = 5kHz square
200
A
I
FSM
Surge non repetitive forward current
tp=10 ms sinusoidal
230
A
T
j
Maximum operating junction temperature
150
C
T
stg
Storage temperature range
-65 to 150
C
TM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values, per diode)
STTA3006CW/CP
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODES
A1
A2
K
TO-247
STTA3006CW
A1
A2
K
November 1999 Ed : 4B
A1
A2
K
SOT93
STTA3006CP
1/8
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F *
Forward voltage drop
I
F
=15A
Tj = 25
C
Tj = 125
C
1.3
1.8
1.6
V
V
I
R **
Reverse leakage current
V
R
=0.8 x
V
RRM
Tj = 25
C
Tj = 125
C
2
100
5
A
mA
V
to
Threshold voltage
Ip < 3.I
AV
Tj = 125
C
1.06
V
rd
Dynamic resistance
177
m
Test pulse :
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Test conditions
Value
Unit
R
th(j-c)
Junction to case
Per diode
Total
Coupling
1.9
1.0
0.1
C/W
P
1
Conduction power dissipation
Per diode
I
F(AV)
= 30A
=0.5
Tc= 110
C
20.5
W
P
max
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
Per diode
Tc=105
C
22.5
W
THERMAL AND POWER DATA
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse
recovery time
Tj = 25
C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1A dI
F
/dt =-50A/
s V
R
= 30V
35
65
ns
I
RM
Maximum
reverse recovery
current
Tj = 125
C V
R
= 400V
I
F
= 15A
dI
F
/dt = -120 A/
s
dI
F
/dt = -500 A/
s
17.5
12.5
A
S factor
Softness factor
Tj = 125
C V
R
= 400V
I
F
= 15A
dI
F
/dt = -500 A/
s
0.5
/
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward
recovery time
Tj = 25
C
I
F
= 15A, dI
F
/dt = 120 A/
s
measured at, 1.1
V
F
max
500
ns
V
Fp
Peak forward
voltage
Tj = 25
C
I
F
= 15A, dI
F
/dt = 120 A/
s
9
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F
2
(RMS)
STTA3006CW/CP
2/8
0
2
4
6
8
10
12
14
16
18
0
5
10
15
20
25
IF(av) (A)
P1(W)
= 1
= 0.5
= 0.2
= 0.1
T
=tp/T
tp
Fig. 1: Conduction losses versus average current.
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
K
Single pulse
= 0.1
= 0.2
= 0.5
K=
Zth(j-c) (tp, )
Rth(j-c)
tp(s)
T
=tp/T
tp
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
10
100
200
VFM(V)
Tj=125
C
IFM(A)
Fig. 2: Forward voltage drop versus forward
current (maximum values).
0
100
200
300
400
500
600
700
800
900
1000
0
5
10
15
20
25
30
35
40
45
IRM(A)
VR=400V
Tj=125
C
IF=IF(av)
IF=2*IF(av)
IF=0.5*IF(av)
dIF/dt(A/
s)
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence).
0
100
200
300
400
500
600
700
800
900 1000
0
20
40
60
80
100
120
140
160
180
200
trr(ns)
VR=400V
Tj=125
C
IF=0.5*IF(av)
IF=2*IF(av)
IF=IF(av)
dIF/dt(A/
s)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
S factor
0
100
200
300
400
500
600
700
800
900 1000
0.0
0.2
0.4
0.6
0.8
1.0
dIF/dt(A/
s)
VR=400V
Tj=125
C
IF<2*IF(av)
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values).
STTA3006CW/CP
3/8
25
50
75
100
125
0.7
0.8
0.9
1.0
1.1
Tj(
C)
IRM
S factor
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125
C).
0
100
200
300
400
500
600
700
800
900 1000
0
5
10
15
20
25
VFP(V)
Tj=125
C
IF=IF(av)
dIF/dt(A/
s)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence).
0
100
200
300
400
500
600
700
800
900 1000
50
100
150
200
250
300
tfr(ns)
Tj=125
C
VFR=1.1*VF max.
IF=IF(av)
dIF/dt(A/
s)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence).
STTA3006CW/CP
4/8
Fig. A : "FREEWHEEL" MODE.
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
"FREEWHEEL
Mode"
application
(Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
APPLICATION DATA
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
t
T
F = 1/T
= t/T
VR
STTA3006CW/CP
5/8