ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November1999 - Ed: 6B
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE :
Electrical insulation : 2500V
RMS
Capacitance : < 45pF.
FEATURES AND BENEFITS
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power
losses
in
any
associated
switching IGBT or MOSFET in all "freewheel
mode" operations.
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
DESCRIPTION
I
F(AV)
2 x 45A
V
RRM
1200V
t
rr
(typ)
65ns
V
F
(max)
1.85V
MAIN PRODUCT CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
1200
V
V
RSM
Non repetitive peak reverse voltage
1200
V
I
F(RMS)
RMS forward current
150
A
I
FRM
Repetitive peak forward current
tp = 5
s F = 5kHz square
700
A
I
FSM
Surge non repetitive forward current
tp = 10ms sinusoidal
420
A
T
stg
Storage temperature range
- 65 to + 150
C
T
j
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values, per diode)
STTA9012TV1/2
TURBOSWITCH
TM
ULTRA-FAST HIGH VOLTAGE DIODE
ISOTOP
TM
K2
A2
K1
A1
STTA9012TV1
K2
K1
A1
A2
STTA9012TV2
1/8
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
V
F
*
Forward voltage drop
I
F
=45A
Tj = 25
C
Tj = 125
C
1.3
2.05
1.85
V
I
R
**
Reverse leakage current
V
R
=0.8 x
V
RRM
Tj = 25
C
Tj = 125
C
3
200
12
A
mA
Vto
Threshold voltage
Ip < 3.I
AV
Tj = 125
C
1.57
V
Rd
Dynamic resistance
6
m
Test pulses :
* tp = 380
s,
< 2%
** tp = 5 ms ,
< 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Test conditions
Value
Unit
R
th(j-c)
Junction to case thermal resistance
Per diode
0.85
C/W
Total
0.48
Coupling
0.1
P
1
Conduction power dissipation
I
F(AV)
= 45A
=0.5
Tc= 70
C
94
W
P
max
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
Tc= 62
C
104
W
THERMAL AND POWER DATA (per diode)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
rr
Reverse recovery
time
Tj = 25
C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1 A dI
F
/dt =-50A/
s V
R
=30V
65
115
ns
I
RM
Maximum reverse
recovery current
Tj = 125
C VR = 600V
I
F
=45A
dI
F
/dt = -360 A/
s
dI
F
/dt = -500 A/
s
50
60
A
S factor
Softness factor
Tj = 125
C V
R
= 600V
I
F
=45A
dI
F
/dt = -500 A/
s
1.2
-
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
t
fr
Forward recovery time
Tj = 25
C
I
F
=45 A, dI
F
/dt = 360 A/
s
measured at 1.1
V
F
max
900
ns
V
Fp
Peak forward voltage
Tj = 25
C
I
F
=45A, dI
F
/dt = 360 A/
s
I
F
=45A, dI
F
/dt = 500 A/
s
30
30
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F
2
(RMS)
STTA9012TV1/2
2/8
0
5
10
15
20
25
30
35
40
45
50
0
20
40
60
80
100
IF(av) (A)
P1(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
Fig. 1: Conduction losses versus average current
(per diode).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
10
100
500
VFM(V)
IFM(A)
Tj=125
C
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3
1E-2
1E-1
1E+0
5E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
Single pulse
= 0.5
= 0.2
= 0.1
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
0
100
200
300
400
500
0
200
400
600
800
1000
trr(ns)
VR=600V
Tj=125
C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/
s)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence, per diode).
0
100
200
300
400
500
0
10
20
30
40
50
60
70
80
dIF/dt(A/
s)
IRM(A)
VR=600V
Tj=125
C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence, per diode).
0
100
200
300
400
500
0.60
0.80
1.00
1.20
1.40
1.60
S factor
IF<2*IF(av)
VR=600V
Tj=125
C
dIF/dt(A/
s)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt (typical
values).
STTA9012TV1/2
3/8
25
50
75
100
125
0.7
0.8
0.9
1.0
1.1
Tj(
C)
IRM
S factor
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj=125
C).
0
100
200
300
400
500
0
5
10
15
20
25
30
35
40
VFP(V)
Tj=125
C
IF=IF(av)
dIF/dt(A/
s)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt (90% confidence,per diode).
0
100
200
300
400
500
100
200
300
400
500
600
700
800
900
1000
tfr(ns)
Tj=125
C
VFR=1.1*VF max.
IF=IF(av)
dIF/dt(A/
s)
Fig. 9: Forward recovery time versus dI
F
/dt (90%
confidence, per diode).
STTA9012TV1/2
4/8
Fig. A : "FREEWHEEL" MODE.
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
The 1200V TURBOSWITCH
series has been
designed to provide the lowest overall power
losses in all high frequency or high pulsed current
operations. In such applications (Fig A to D),the
way of calculating the power losses is given below :
APPLICATION DATA
DIODE:
TURBOSWITCH
IL
LOAD
TRANSISTOR
SWITCHING
t
T
F = 1/T
= t/T
VR
STTA9012TV1/2
5/8
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