April 2006
Rev 1
1/8
STTH10002
Ultrafast recovery diode
Main product characteristics
Features and benefits
Very low forward losses
Low recovery time
High surge current capability
Insulated
Insulating voltage = 2500 V
rms
Capacitance = 45 pF
Description
The STTH10002 is a dual rectifier suited for
welding equipment, and high power industrial
applications.
Packaged in ISOTOP, this device is intended for
use in the secondary rectification of power
converters.
Order codes
I
F(AV)
2 x 50 A
V
RRM
200 V
T
j
(max)
150 C
V
F
(typ)
0.72 V
t
rr
(typ)
30 ns
Part Number
Marking
STTH10002TV1
STTH10002TV1
STTH10002TV2
STTH10002TV2
K2
K1
A2
A1
K2
K1
A2
A1
A1
A1
A2
A2
K1
K1
K2
K2
ISOTOP
STTH10002TV1
ISOTOP
STTH10002TV2
www.st.com
Characteristics
STTH10002
2/8
1 Characteristics
When the two diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P (diode 1) X R
th(j-c)
(Per diode) + P (diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.63 x I
F(AV)
+ 0.0034 I
F
2
(RMS)
Table 1.
Absolute ratings (limiting values at T
j
= 25 C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward current
Per diode
150
A
I
F(AV)
Average forward current,
= 0.5
Per diode T
c
= 100 C
50
A
Per device T
c
= 95 C
I
FSM
Surge non repetitive forward current
t
p
= 10 ms Sinusoidal
750
A
T
stg
Storage temperature range
-55 to + 175
C
T
j
Maximum operating junction temperature
150
C
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
Per diode
1
C/W
Total
0.55
R
th(c)
Coupling
0.1
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 C
V
R
= V
RRM
50
A
T
j
= 125 C
50
500
V
F
(2)
Forward voltage drop
T
j
= 25 C
I
F
= 50 A
1
V
I
F
= 100 A
1.15
T
j
= 125 C
I
F
= 100 A
0.90
1.0
T
j
= 150 C
I
F
= 50 A
0.72
0.80
I
F
= 100 A
0.86
0.97
1.
Pulse test: t
p
= 5 ms,
< 2 %
2.
Pulse test: t
p
= 380 s,
< 2 %
STTH10002
Characteristics
3/8
Table 4.
Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/s,
V
R
= 30 V, T
j
= 25 C
53
65
ns
I
F
= 1 A, dI
F
/dt = -200 A/s,
V
R
= 30 V, T
j
= 25 C
30
37
I
RM
Reverse recovery current
I
F
= 50 A, dI
F
/dt = 200 A/s,
V
R
= 160 V, T
j
= 125 C
10
13
A
t
fr
Forward recovery time
I
F
= 50 A, dI
F
/dt = 200 A/s
V
FR
= 1.1 x V
Fmax
, T
j
= 25 C
180
ns
V
FP
Forward recovery voltage
I
F
= 50 A, dI
F
/dt = 200 A/s,
T
j
= 25 C
1.6
V
Figure 1.
Peak current versus duty cycle
Figure 2.
Forward voltage drop versus
forward current (typical values, per
diode)
0
100
200
300
400
500
600
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
M
(A)
T
d=tp/T
tp
I
M
T
=tp/T
tp
I
M
P = 60 W
P = 60 W
P = 30 W
P = 30 W
P = 100 W
P = 100 W
0
50
100
150
200
250
300
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
FM
(A)
T
j
=25C
T
j
=150C
V
FM
(V)
Figure 3.
Forward voltage drop versus
forward current (maximum values,
per diode)
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
0
50
100
150
200
250
300
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
FM
(A)
T
j
=25C
T
j
=150C
V
FM
(V)
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z
th(j-c)
/R
th(j-c)
Single pulse
ISOTOP
tp(s)
Characteristics
STTH10002
4/8
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6.
Reverse recovery charges versus
dI
F
/dt (typical values)
100
1000
1
10
100
1000
C(pF)
F=1MHz
V
osc
=30mV
RMS
T
j
=25C
V
R
(V)
0
50
100
150
200
250
300
350
400
450
10
100
1000
Q
RR
(nC)
I
F
= 50 A
V
R
=160 V
T
j
=125 C
T
j
=25 C
dI
F
/dt(A/s)
Figure 7.
Reverse recovery time versus dI
F
/dt
(typical values)
Figure 8.
Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 9.
Dynamic parameters versus
junction temperature
0
10
20
30
40
50
60
70
80
90
100
110
120
10
100
1000
t
RR
(ns)
I
F
= 50 A
V
R
= 160 V
T
j
=125 C
T
j
=25 C
dI
F
/dt(A/s)
0
4
8
12
16
20
10
100
1000
I
RM
(A)
I
F
= 50 A
V
R
=160V
T
j
=125 C
T
j
=25 C
dI
F
/dt(A/s)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
Q
RR
; I
RM
[T
j
] / Q
RR
; I
RM
[T
j
=125C]
I
RM
Q
RR
I
F
= 50 A
V
R
=160V
T
j
(C)
STTH10002
Ordering information scheme
5/8
2
Ordering information scheme
STTH 100 02 TVx
Ultrafast switching diode
Average forward current
100 = 100 A
02 = 200 V
TVx = ISOTOP
Repetitive peak reverse voltage
Package
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