STTH16003TV
October 1999 - Ed: 4D
HIGH FREQUENCY SECONDARY RECTIFIER
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in ISOTOP
TM
, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecom power supplies.
DESCRIPTION
COMBINES HIGHEST RECOVERY AND
VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
ISOLATED PACKAGE: ISOTOP
Insulated voltage: 2500 V
RMS
Capacitance: < 45 pF
LOW INDUCTANCE AND LOW CAPACITANCE
ALLOW SIMPLIFIED LAYOUT
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
300
V
I
F(RMS)
RMS forward current
180
A
I
F(AV)
Average forward current
Tc = 80C
= 0.5
Per diode
Perdevice
80
160
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
800
A
I
RSM
Non repetitive peak reverse current
tp = 100
s square
5
A
T
stg
Storage temperature range
- 55 to + 150
C
Tj
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 80 A
V
RRM
300 V
Tj (max)
150 C
V
F
(max)
0.95 V
trr (max)
80 ns
MAJOR PRODUCTS CHARACTERISTICS
A1
K1
K2
A2
A1
A2
K1
K2
ISOTOP
TM
ISOTOP is a registered trademark of STMicroelectronics
1/5
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
V
R
= 300 V
Tj = 25
C
200
A
Tj = 125
C
0.2
2
mA
V
F
**
Forward voltage drop
I
F
= 80 A
Tj = 25
C
1.2
V
Tj = 125
C
0.8
0.95
Pulse test : * tp = 5 ms,
< 2 %
** tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.75 x I
F(AV)
+ 0.0025 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Tests conditions
Min.
Typ.
Max.
Unit
trr
I
F
= 0.5 A Irr = 0.25 A I
R
= 1A
Tj = 25
C
60
ns
I
F
= 1 A dI
F
/dt = - 50 A/
s V
R
= 30 V
80
tfr
I
F
= 80 A dI
F
/dt = 200 A/
s
Tj = 25
C
1000
ns
V
FP
V
FR
= 1.1 x V
F
max.
5
V
S
factor
Vcc = 200 V I
F
= 80 A
dI
F
/dt = 200 A/
s
Tj = 125
C
0.3
-
I
RM
16
A
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
Total
0.7
0.4
C/W
R
th (c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P (diode 1) x R
th(j-c)
(per diode) + P (diode 2) x R
th(C)
THERMAL RESISTANCES
STTH16003TV
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0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
80
90
100
P1(W)
= 0.1
= 0.2
= 0.5
= 1
= 0.05
IF(av) (A)
T
=tp/T
tp
Fig. 1: Conduction losses versus average current
(per diode).
1E-3
1E-2
1E-1
1E+0
5E+0
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
tp(s)
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
200
IFM(A)
Tj=125C
(Typical values)
Tj=25C
Tj=125C
VFM(V)
Fig. 2: Forward voltage drop versus forward
current (Maximum values, per diode).
0
50
100 150 200 250 300 350 400 450 500
0
5
10
15
20
25
30
IRM(A)
VR=200V
Tj=125C
IF=2xIF(av)
IF=IF(av)
IF=0.5xIF(av)
dIF/dt(A/s)
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence, per diode).
0
50
100 150 200 250 300 350 400 450 500
0
20
40
60
80
100
120
140
160
180
200
220
240
trr(ns)
VR=200V
Tj=125C
IF=2xIF(av)
IF=IF(av)
IF=0.5xIF(av)
dIF/dt(A/s)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence, per diode).
0
50
100 150 200 250 300 350 400 450 500
0.0
0.1
0.2
0.3
0.4
0.5
0.6
S factor
VR=200V
Tj=125C
dIF/dt(A/s)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt (typical
values, per diode).
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25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
IRM
S factor
Tj(C)
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (Reference:
Tj=125C).
0
50
100 150 200 250 300 350 400 450 500
0
100
200
300
400
500
600
700
800
900
1000
tfr(ns)
VFR=1.1 x VF max.
IF=IF(av)
Tj=125C
dIF/dt(A/s)
Fig.9: Forward recovery time versus dI
F
/dt (90%
confidence, per diode).
0
50
100 150 200 250 300 350 400 450 500
0
1
2
3
4
5
6
7
8
VFP(V)
IF=IF(av)
Tj=125C
dIF/dt(A/s)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt (90% confidence, per diode).
STTH16003TV
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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http://www.st.com
PACKAGE MECHANICAL DATA
ISOTOP
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
Type
Marking
Package
Weight
Base qty
Delivery mode
STTH16003TV1 STTH16003TV
ISOTOP
27 g.
without screws
10
with screws
Tube
Cooling method: by conduction (C)
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Epoxy meets UL 94,V0
STTH16003TV
5/5
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