1/5
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
Up to 2 x 120 A
V
RRM
200 V
T
j
150C
V
F
(typ)
0.75 V
t
rr
(typ)
41 ns
STTH20002TV
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward voltage
170
A
I
F(AV)
Average forward current
= 0.5
Tc = 95C
Per diode
100
A
Tc = 80C
Per diode
120
I
FSM
Surge non repetitive forward current
tp = 10ms sinusoidal
1000
A
T
stg
Storage temperature range
-55 to + 150
C
T
j
Maximum operating junction temperature
150
C
K1
K2
A2
A1
ISOTOP
STTH20002TV1
A1
K1
A2
K2
July 2004
REV. 2
FEATURES AND BENEFITS
Suited for SMPS
Very Low Forward Losses
Low recovery time
High surge current capability
Insulated:
Insulating voltage=2500V
RMS
Capacitance = 55pF
DESCRIPTION
Dual rectifier suited for welding equipment, high
power industrial application.
Packaged in Isotop, this device is intended for use
in the secondary rectification of the applications.
Order Codes
Part Number
Marking
STTH20002TV1
STTH20002TV1
STTH20002TV
2/5
THERMAL RESISTANCE
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test:
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation: P = 0.65 x I
F(AV)
+ 0.002 I
F
2
(RMS)
DYNAMIC CHARACTERISTICS (per diode)
Symbol
Parameter
Maximum
Unit
R
th(j-c)
Junction to case
Per diode
0.52
C/W
Total
0.31
R
th(c)
Coupling
0.1
C/W
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
I
R
*
Reverse leakage current T
j
= 25C
V
R
= V
RRM
100
A
T
j
= 125C
80
800
V
F
**
Forward voltage drop
T
j
= 25C
I
F
= 100A
1.05
V
I
F
= 200A
1.20
T
j
= 150C
I
F
= 100A
0.75
0.85
I
F
= 200A
1.05
Symbol
Parameter
Test conditions
Min.
Typ Max.
Unit
t
rr
Reverse recovery
time
T
j
= 25C
I
F
= 1A dI
F
/dt = 200 A/s
V
R
=30V
41
50
ns
I
RM
Reverse recovery
current
T
j
= 125C I
F
= 100A V
R
= 160V
dI
F
/dt = 200 A/s
11.5
15
A
t
fr
Forward recovery
time
T
j
= 25C
I
F
= 100A dI
F
/dt = 200 A/s
V
FR
= 1.1 x V
Fmax
800
ns
V
FP
Forward recovery
voltage
T
j
= 25C
I
F
= 100A dI
F
/dt = 200 A/s
2.5
V
STTH20002TV
3/5
Fig. 1: Peak current versus duty cycle (per diode).
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 5: Reverse recovery charges versus dI
F
/dt
(typical values, per diode).
0
100
200
300
400
500
600
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
=tp/T
tp
P = 160W
P = 120W
P = 80W
I (A)
M
0
20
40
60
80
100
120
140
160
180
200
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
I
(A)
FM
T =150C
j
T =25C
j
V
(V)
FM
0
20
40
60
80
100
120
140
160
180
200
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
(A)
FM
T =150C
j
T =25C
j
V
(V)
FM
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z
/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
100
1000
10000
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
0
100
200
300
400
500
600
700
800
900
1000
10
100
1000
Q (nC)
rr
I =100A
F
V =160V
R
dI /dt(A/s)
F
T =25C
j
T =125C
j
STTH20002TV
4/5
Fig. 6: Reserve recovery time versus dI
F
/dt
(typical values, per diode).
Fig. 7: Peak reverse recovery current versus dI
F
/dt
(typical values, per diode).
Fig. 8: Dynamic parameters versus junction
temperature.
0
20
40
60
80
100
120
10
100
1000
t (ns)
rr
dI /dt(A/s)
F
T =25C
j
T =125C
j
I =100A
F
V =160V
R
0
5
10
15
20
25
10
100
1000
I
(A)
RM
dI /dt(A/s)
F
T =25C
j
T =125C
j
I =100A
F
V =160V
R
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
Q
; I
] /
RR
RM
j
RR
RM
j
[T
Q
; I
[T =125C]
T (C)
j
I
RM
Q
RR
I =100A
F
V =160V
R
STTH20002TV
5/5
PACKAGE MECHANICAL DATA
ISOTOP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
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www.st.com
ORDERING INFORMATION
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Ordering type
Marking
Package
Weight
Base qty
Delivery
mode
STTH20002TV1
STTH20002TV1
ISOTOP
27 g
(without
screws)
10
(with
screws)
Tube
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
REVISION HISTORY
Table 1: Revision history
Date
Revision
Description of Changes
26-May-2004
1
First issue
13-Jul-2004
2
Figure 6 legend corrected: "Forward" changed to "Reverse"
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