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STTH2003CT/CG/CF/CR/CFP
August 2003 - Ed: 7D
HIGH FREQUENCY SECONDARY RECTIFIER
Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC/DC converters.
Packaged
in
TO-220AB,
ISOWATT220AB,
TO-220FPAB, I
2
PAK or D
2
PAK, this device is
especially intended for secondary rectification.
DESCRIPTION
s
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
s
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
s
INSULATED PACKAGES: ISOWATT220AB,
TO-220FPAB
Electric insulation: 2000VDC
Capacitance: 12pF
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
300
V
I
F(RMS)
RMS forward current
30
A
I
F(AV)
Average forward
current
= 0.5
TO-220AB / D
2
PAK /
I
2
PAK
Tc=140
C
Per diode
Per device
10
20
A
ISOWATT220AB
Tc=125
C
TO-220FPAB
Tc=115
C
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
110
A
I
RSM
Non repetitive avalanche current
tp = 20
s square
5
A
T
stg
Storage temperature range
-65 + 175
C
Tj
Maximum operating junction temperature
175
C
ABSOLUTE RATINGS (limiting values, per diode)
A1
A2
K
I
F(AV)
2 x 10 A
V
RRM
300 V
Tj (max)
175 C
V
F
(max)
1 V
trr (max)
35 ns
MAJOR PRODUCT CHARACTERISTICS
A1
A2
K
D
2
PAK
STTH2003CG
A1
A2
K
TO-220AB
STTH2003CT
A1
A2
K
ISOWATT220AB
STTH2003CF
A1
A2
K
I
2
PAK
STTH2003CR
A1
A2
K
TO-220FPAB
STTH2003CFP
STTH2003CT/CG/CF/CR/CFP
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
V
R
= 300 V
Tj = 25C
20
A
Tj = 125C
30
300
V
F
**
Forward voltage drop
I
F
= 10 A
Tj = 25C
1.25
V
Tj = 125C
0.85
1
Pulse test : * tp = 5 ms,
< 2 %
** tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I
F(AV)
+ 0.025 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
TO-220AB / D
2
PAK / I
2
PAK
Per diode
2.5
C/W
Total
1.3
ISOWATT220AB
Per diode
3.9
Total
3.2
TO-220FPAB
Per diode
4.6
Total
4
R
th (c)
TO-220AB / D
2
PAK / I
2
PAK
Coupling
0.1
ISOWATT220AB
Coupling
2.5
TO-220FPAB
Coupling
3.5
THERMAL RESISTANCES
Symbol
Tests conditions
Min.
Typ.
Max.
Unit
trr
I
F
= 0.5 A
Irr = 0.25 A
I
R
= 1 A
Tj = 25
C
25
ns
I
F
= 1 A
dI
F
/dt = - 50 A/
s
V
R
= 30 V
35
tfr
I
F
= 10 A
dI
F
/dt = 100 A/
s
V
FR
= 1.1 x V
F
max.
Tj = 25
C
230
ns
V
FP
3.5
V
S
factor
Vcc = 200V
I
F
= 10 A
dI
F
/dt = 200 A/
s
Tj = 125C
0.3
-
I
RM
8
A
RECOVERY CHARACTERISTICS
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STTH2003CT/CG/CF/CR/CFP
0
2
4
6
8
10
12
0
2
4
6
8
10
12
14
IF(av) (A)
P1(W)
T
=tp/T
tp
= 1
= 0.5
= 0.2
= 0.1
= 0.05
Fig. 1: Conduction losses versus average current
(per diode).
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
1
10
100
200
VFM(V)
IFM(A)
Tj=125C
Tj=25C
Tj=75C
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode
).
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
Single pulse
= 0.5
= 0.2
= 0.1
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB
/ D
2
PAK / I
2
PAK).
0
50
100 150 200 250 300 350 400 450 500
0
20
40
60
80
100
trr(ns)
VR=200V
Tj=125C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/s)
Fig. 5: Reverse recovery time versus dI
F
/dt (90%
confidence, per diode).
0
50
100 150 200 250 300 350 400 450 500
0
2
4
6
8
10
12
14
16
dIF/dt(A/s)
IRM(A)
VR=200V
Tj=125C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
Fig. 4:
Peak reverse recovery current versus
dI
F
/dt (90% confidence, per diode).
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
tp(s)
T
=tp/T
tp
Single pulse
= 0.5
= 0.2
= 0.1
Fig. 3-2: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration
(ISOWATT220AB).
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STTH2003CT/CG/CF/CR/CFP
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Tj(C)
IRM
S factor
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125C).
0
50
100 150 200 250 300 350 400 450 500
0
2
4
6
8
10
V
(V)
FP
IF=IF(av)
Tj=125C
dIF/dt(A/s)
Fig. 8: Transient peak forward voltage versus
dI
F
/dt (90% confidence, per diode) (TO-220AB).
0
50
100 150 200 250 300 350 400 450 500
0
100
200
300
400
500
t (ns)
fr
VFR=1.1*VF max.
IF=IF(av)
Tj=125C
dIF/dt(A/s)
Fig. 9: Forward recovery time versus dI
F
/dt (90%
confidence, per diode).
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
Rth(j-a) (C/W)
S(Cu) (cm)
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35
m)
(D
2
PAK).
0
50
100 150 200 250 300 350 400 450 500
0.00
0.10
0.20
0.30
0.40
0.50
0.60
S factor
VR=200V
Tj=125C
dIF/dt(A/s)
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt (typical
values, per diode).
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STTH2003CT/CG/CF/CR/CFP
PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
8.90
3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (in millimeters)
D
2
PAK
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