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STTH3002C
February 2004 - Ed: 1
HIGH EFFICIENCY ULTRAFAST DIODE
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in TO-220AB, D
2
PAK, TO-247 and
I
2
PAK, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
Suited for SMPS
Low losses
Low forward and reverse recovery times
High surge current capability
High junction temperature
Low leakage current
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward current
50
A
I
F(AV)
Average forward current
=0.5
Tc = 155C
Per diode
15
A
Tc = 145C
Per device
30
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
180
A
T
stg
Storage temperature range
- 65 + 175
C
Tj
Maximum operating junction temperature
175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
2 x 15A
V
RRM
200 V
Tj (max)
175 C
V
F
(typ)
0.75 V
t
rr
(typ)
17 ns
MAIN PRODUCT CHARACTERISTICS
A1
A2
K
I
2
PAK
STTH3002CR
A1
A2
K
TO-220AB
STTH3002CT
A1
A2
K
TO-247
STTH3002CW
A1
A2
K
A1
A2
K
K
D
2
PAK
STTH3002CG
STTH3002C
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
20
A
Tj = 125C
10
125
V
F
**
Forward voltage drop
Tj = 25C
I
F
= 15 A
1.05
V
Tj = 25C
I
F
= 30 A
1.18
Tj = 150C
I
F
= 15 A
0.75
0.84
Tj = 150C
I
F
= 30 A
0.99
Pulse test: * tp = 5ms,
< 2%
** tp = 380s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.69 x I
F(AV)
+ 0.01 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Maximum
Unit
R
th (j-c)
Junction to case
Per diode
1.5
C/W
Per device
1.0
R
th (j-c)
Coupling
0.5
C/W
When the diodes 1 and 2 are used simultaneously:
Tj (diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
THERMAL PARAMETERS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse
recovery time
Tj = 25C
I
F
= 1 A V
R
= 30V
dI
F
/dt = 200 A/s
17
22
ns
I
RM
Reverse
recovery current
Tj = 125C
I
F
= 15 A V
R
= 160V
dI
F
/dt = 200 A/s
6.0
7.8
A
t
fr
Forward
recovery time
Tj = 25C
I
F
= 15 A dI
F
/dt = 200 A/s
V
FR
= 1.1 x V
F
max
110
ns
V
FP
Forward
recovery voltage
Tj = 25C
I
F
= 15 A dI
F
/dt = 200 A/s
2.5
V
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH3002C
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0
20
40
60
80
100
120
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I (A)
M
T
=tp/T
tp
I
M
P = 30W
P = 15W
P = 10W
Fig. 1: Peak current versus duty cycle (per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
(V)
FM
I
(A)
FM
T =25C
j
T =150C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
/R
th(j-c)
th(j-c)
Single pulse
t (s)
p
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
10
100
1000
0
50
100
150
200
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
25
50
75
100
125
150
175
200
225
250
10
100
1000
Q (nC)
rr
dI /dt(A/s)
F
I =15A
F
V =160V
R
T =125C
j
T =25C
j
Fig. 5: Reverse recovery charges versus dI
F
/dt
(typical values, per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
(A)
FM
V
(V)
FM
T =25C
j
T =150C
j
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
STTH3002C
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0
10
20
30
40
50
60
70
10
100
1000
t (ns)
rr
dI /dt(A/s)
F
T =25C
j
T =125C
j
I =15A
F
V =160V
R
Fig. 6: Reverse recovery time versus dI
F
/dt
(typical values, per diode).
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
10
100
1000
I
(A)
RM
dI /dt(A/s)
F
T =25C
j
T =125C
j
I =15A
F
V =160V
R
Fig. 7: Peak reverse recovery current versus dI
F
/dt
(typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
I
RM
Q
rr
T (C)
j
Qrr;I
[T ]/Qrr;I
[T =125C]
RM
j
RM
j
I =15A
F
V =160V
R
Fig. 8:
Dynamic parameters versus junction
temperature.
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
S(Cu)(cm)
R
(C/W)
th(j-a)
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, e
CU
: 35m) for D
2
PAK.
STTH3002C
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PACKAGE MECHANICAL DATA
D
2
PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
8.90
3.70
1.30
5.08
16.90
10.30
FOOTPRINT DIMENSIONS (in millimeters)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
R
0.40 typ.
0.016 typ.
V2
0
8
0
8
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH3002CT
STTH3002CT
TO-220AB
2.23 g
50
Tube
STTH3002CG
STTH3002CG
D
2
PAK
1.48 g
50
Tube
STTH3002CG-TR
STTH3002CG
D
2
PAK
1.48 g
1000
Tape & reel
STTH3002CR
STTH3002CR
I
2
PAK
1.49 g
50
Tube
STTH3002CW
STTH3002CW
TO-247
4.46 g
50
Tube
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