May 2006
Rev 1
1/9
STTH506
Turbo 2 ultrafast - high voltage rectifier
Main product characteristics
Features and benefits
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces conduction and switching losses
Insulated package TO-220FPAC
Insulated voltage: 2500 V
RMS
Typical package capacitance: 12 pF
Description
The STTH506 uses ST Turbo2 600V technology.
This device is specially suited for use in switching
power supplies, and industrial applications.
Order codes
I
F(AV)
5 A
V
RRM
600 V
T
j
175 C
V
F
(typ)
1.1 V
t
rr
(max)
30 ns
Part Number
Marking
STTH506B
STTH506B
STTH506B-TR
STTH506B
STTH506D
STTH506D
STTH506FP
STTH506FP
K
A
TO-220FPAC
STTH506FP
K
A
TO-220AC
STTH506D
K
A
DPAK
STTH506B
K
A
NC
Table 1.
Absolute ratings (limiting values per diode at 25 C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
TO-220AC, TO220FPAC
20
A
DPAK
10
A
I
F(AV)
Average forward current,
= 0.5
T
c
= 145 C
TO-220AC, DPAK
5
A
T
c
= 120 C
TO-220FPAC
5
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms
Sinusoidal
TO-220AC, TO220FPAC
70
A
DPAK
55
A
T
stg
Storage temperature range
-65 to + 175
C
T
j
Maximum operating junction temperature
(1)
175
C
1.
thermal runaway condition for a diode on its own heatsink
dP
tot
dT
j
---------------
1
R
th j
a
(
)
--------------------------
<
www.st.com
Characteristics
STTH506
2/9
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.07 x I
F(AV)
+ 0.066 I
F
2
(RMS)
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
TO-220AC, DPAK
3.5
C/W
TO-220FPAC
6
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 C
V
R
= V
RRM
5
A
T
j
= 150 C
13
130
V
F
(2)
Forward voltage drop
T
j
= 25 C
I
F
= 5 A
1.85
V
T
j
= 150 C
1.10
1.40
1.
Pulse test: t
p
= 5 ms,
< 2 %
2.
Pulse test: t
p
= 380 s,
< 2 %
Table 4.
Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
t
rr
Reverse recovery time
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A,
T
j
= 25 C
30
ns
I
F
= 1 A, dI
F
/dt = -50 A/s,
V
R
= 30 V, T
j
= 25 C
35
50
I
RM
Reverse recovery current
I
F
= 5 A, dI
F
/dt = -100 A/s,
V
R
= 400 V, T
j
= 25 C
3.5
5
t
fr
Forward recovery time
I
F
= 5 A dI
F
/dt = 100 A/s
V
FR
= 1.1 x V
Fmax
, T
j
= 25 C
180
ns
V
FP
Forward recovery voltage
I
F
= 5 A dI
F
/dt = 100 A/s
V
FR
= 1.1 x V
Fmax
, T
j
= 25 C
4
V
Figure 1.
Conduction losses versus
average current
Figure 2.
Forward voltage drop versus
forward current
0
1
2
3
4
5
6
7
8
9
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
P
(W)
F(AV)
I
(A)
F(AV)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 1
= 0.5
0
10
20
30
40
50
60
70
80
90
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
(A)
FM
V
(V)
FM
T =25C
(maximum values)
j
T =150C
(maximum values)
j
T =150C
(typical values)
j
STTH506
Characteristics
3/9
Figure 3.
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AC, DPAK)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAC)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
TO-220AC
DPAK
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z
/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
TO-220FPAC
Figure 5.
Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 6.
Reverse recovery time versus
dI
F
/dt (typical values)
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
350
400
450
500
I
(A)
RM
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
I =0.25 x I
F
F(AV)
V =400V
T =125C
R
j
0
50
100
150
200
250
0
50
100
150
200
250
300
350
400
450
500
t (ns)
rr
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
Figure 7.
Reverse recovery charges versus
dI
F
/dt (typical values)
Figure 8.
Softness factor versus
dI
F
/dt (typical values)
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
400
450
500
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
dI /dt(A/s)
F
Q (nC)
rr
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
0
50
100
150
200
250
300
350
400
450
500
S factor
I = 2 x I
T = 125 C
F
F(AV)
j
V = 400 V
R
dI /dt(A/s)
F
Characteristics
STTH506
4/9
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
Figure 10.
Transient peak forward voltage
versus dI
F
/dt (typical values)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
25
50
75
100
125
I
and
RM
S factor
Q
RR
T (C)
j
I =I
Reference: T =125C
F
F(AV)
j
V =400V
R
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0
100
200
300
400
500
V
(V)
FP
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
Figure 11.
Forward recovery time versus
dI
F
/dt (typical values)
Figure 12.
Junction capacitance versus
reverse voltage applied
(typical values)
Figure 13.
Thermal resistance junction to
ambient versus copper surface
under tab (printed circuit board
FR4, e
CU
= 35 m)
0
20
40
60
80
100
120
140
160
180
200
220
0
100
200
300
400
500
t (ns)
fr
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
V
=1.1 x V max.
FR
F
1
10
100
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
0
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
35
40
R
(C/W)
th(j-a)
S
(cm)
(Cu)
DPAK
STTH506
Package mechanical data
5/9
2
Package mechanical data
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.80 Nm
Maximum torque value: 1.0 Nm
Figure 14.
DPAK Footprint dimensions (in mm)
Table 5.
DPAK Dimensions
Ref.
Dimensions
Millimeters
Inches
Min.
Max
Min.
Max.
A
2.20
2.40
0.086
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.212
C
0.45
0.60
0.017
0.023
C2
0.48
0.60
0.018
0.023
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.251
0.259
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.397
L2
0.80 typ.
0.031 typ.
L4
0.60
1.00
0.023
0.039
V2
0
8
0
8
H
L4
G
B
L2
E
B2
D
A1
R
R
C
A
C2
0.60 MIN.
V2
A2
6.7
6.7
3
3
1.6
1.6
2.3
2.3
PDF 
ZIP