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STTH5L06
November 2001 - Ed: 1A
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
The STTH5L06, which is using ST Turbo 2 600V
technology, is specially suited as boost diode in
discontinuous or critical mode power factor
corrections.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DESCRIPTION
s
Ultrafast switching
s
Low reverse recovery current
s
Reduces switching & conduction losses
s
Low thermal resistance
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward current
20
A
I
F(AV)
Average forward current
Tl = 50C
=0.5
5
A
I
FSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
110
A
T
stg
Storage temperature range
- 65 + 175
C
Tj
Maximum operating junction temperature
+ 175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
5 A
V
RRM
600 V
I
R
(max)
150 A
Tj (max)
175 C
V
F
(max)
1.05 V
trr (max)
95 ns
MAIN PRODUCT CHARACTERISTICS
DO-201AD
STTH5L06
STTH5L06
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
Reverse leakage
current
V
R
= 600V
Tj = 25C
5
A
Tj = 150C
25
150
V
F
Forward voltage drop
I
F
= 5 A
Tj = 25C
1.3
V
Tj = 150C
0.85
1.05
To evaluate the maximum conduction losses use the following equation :
P = 0.89 x I
F(AV)
+ 0.033 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Maximum
Unit
R
th (j-l)
Junction to lead
L = 10mm
20
C/W
R
th (j-a)
Junction to ambient (note 1)
L = 10mm
75
Note 1: with recommended pad layout (see Fig. 12)
THERMAL PARAMETERS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
I
F
= 1 A dI
F
/dt = - 50 A/s
V
R
= 30V
Tj = 25C
65
95
ns
tfr
Forward recovery
time
I
F
= 5 A dI
F
/dt = 100 A/
s
V
FR
= 1.1 x V
F
max
Tj = 25C
150
ns
V
FP
Forward recovery
time
I
F
= 5 A dI
F
/dt = 100 A/
s
Tj = 25C
7
V
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH5L06
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0
1
2
3
4
5
6
7
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
IF(av)(A)
P(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
Fig. 1: Conduction losses versus average current.
0.1
1.0
10.0
100.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VFM(V)
Tj=25C
(Maximum values)
Tj=150C
(Maximum values)
Tj=150C
(Maximum values)
Tj=150C
(Typical values)
Tj=150C
(Typical values)
IFM(A)
Fig. 2: Forward voltage drop versus forward
current
.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
tp(s)
Zth(j-a)/Rth(j-a)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 3: Relative variation of thermal impedance
junction
ambient
versus
pulse
duration
(DO-201AD, epoxy FR4, Lleads = 10mm).)
0
100
200
300
400
500
600
700
800
900
1000
0
10
20
30
40
50
60
70
80
90
100
dIF/dt(A/s)
VR=400V
Tj=125C
IF=IF(av)
IF=IF(av)
IF=0.5 x IF(av)
IF=0.5 x IF(av)
IF=2 x IF(av)
IF=2 x IF(av)
trr(ns)
Fig. 5:
Reverse recovery time versus dI
F
/dt
(90% confidence).
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
90
100
dIF/dt(A/s)
VR=400V
Tj=125C
IF=2 x IF(av)
IF=2 x IF(av)
IF=0.5 x IF(av)
IF=0.5 x IF(av)
IF=IF(av)
IF=IF(av)
IF=0.25 x IF(av)
IF=0.25 x IF(av)
IRM(A)
Fig. 4: Peak reverse recovery current versus dI
F
/dt
(90% confidence).
0
50
100
150
200
250
300
350
400
450
500
0
10
20
30
40
50
60
70
80
90
100
dIF/dt(A/s)
VR=400V
Tj=125C
IF=IF(av)
IF=0.5 x IF(av)
IF=2 x IF(av)
Qrr(nC)
Fig. 6: Reverse recovery charges versus dI
F
/dt
(90% confidence).
STTH5L06
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0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
10
20
30
40
50
60
70
80
90
100
dIF/dt(A/s)
IF=IF(av)
VR=400V
Tj=125C
S factor
Fig. 7: Softness factor versus dI
F
/dt (typical
values).
0.00
0.25
0.50
0.75
1.00
1.25
25
50
75
100
125
Tj(C)
IRM
QRR
S factor
IF=IF(av)
VR=400V
Reference: Tj=125C
Fig.
8:
Relative
variations
of
dynamic
parameters versus junction temperature.
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
160
180
200
dIF/dt(A/s)
IF=IF(av)
Tj=125C
VFP(V)
Fig. 9: Transient peak forward voltage versus
dI
F
/dt (90% confidence).
0
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
100
120
140
160
180
200
dIF/dt(A/s)
IF=IF(av)
VFR=1.1 x VF max.
Tj=125C
tfr(ns)
Fig. 10:
Forward recovery time versus dI
F
/dt
(90% confidence).
1
10
100
1
10
100
1000
VR(V)
F=1MHz
Vosc=30mV
Tj=25C
C(pF)
Fig. 11:
Junction capacitance versus reverse
voltage applied (typical values).
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
S(cm)
Rth(j-a) (C/W)
L lead=10mm
Fig. 12: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35m)
STTH5L06
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PACKAGE MECHANICAL DATA
DO-201AD
B
A
E
E
D
D
C
B
note 2
note 1
note 1
REF.
DIMENSIONS
NOTES
Millimeters
Inches
Min.
Max.
Min.
Max.
A
9.50
0.374
1 - The lead diameter
D is not controlled over zone E
2 - The minimum length which must stay straight be-
tween the right angles after bending is 0.59"(15 mm)
B
25.40
1.000
C
5.30
0.209
D
1.30
0.051
E
1.25
0.049
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH5L06
STTH5L06
DO-201AD
600
Ammopack
STTH5L06RL
STTH5L06
DO-201AD
1900
Tape & reel
s
Epoxy meets UL 94,V0
s
Lead bending and cutting: refer to ST application note AN1471
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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