1/6
Table 1: Main Product Characteristics
I
F(AV)
Up to 2 x 40 A
V
RRM
600 V
T
j
175C
V
F
(typ)
1.0 V
t
rr
(max)
65 ns
STTH60L06C
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(RMS)
RMS forward voltage
60
A
I
F(AV)
Average forward current
= 0.5
Tc = 125C
Tc = 110C
Per diode
Per device
30
60
A
Tc = 100C
Tc = 80C
Per diode
Per device
40
80
I
FSM
Surge non repetitive forward current
tp = 10ms sinusoidal
210
A
T
stg
Storage temperature range
-65 to + 175
C
T
j
Maximum operating junction temperature
175
C
K
A2
A1
TO-247
STTH60L06CW
K
A1
A2
September 2004
REV. 1
FEATURES AND BENEFITS
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching & conduction losses
DESCRIPTION
The STTH60L06, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
Table 2: Order Codes
Part Number
Marking
STTH60L06CW
STTH60L06CW
STTH60L06C
2/6
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics (per diode)
Pulse test:
* tp = 5 ms,
< 2%
** tp = 380 s,
< 2%
To evaluate the conduction losses use the following equation: P = 0.95 x I
F(AV)
+ 0.010 I
F
2
(RMS)
Table 6: Dynamic Characteristics (per diode)
Symbol
Parameter
Value (max).
Unit
R
th(j-c)
Junction to case
Per diode
1.05
C/W
Total
0.68
R
th(c)
Coupling
0.3
C/W
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
I
R
*
Reverse leakage current T
j
= 25C
V
R
= V
RRM
25
A
T
j
= 150C
80
800
V
F
**
Forward voltage drop
T
j
= 25C
I
F
= 30A
1.55
V
T
j
= 150C
1.0
1.25
T
j
= 25C
I
F
=60A
1.78
T
j
= 150C
1.24
1.55
Symbol
Parameter
Test conditions
Min.
Typ Max.
Unit
t
rr
Reverse recovery
time
T
j
= 25C
I
F
= 0.5A Irr = 0.25A I
R
=1A
65
ns
I
F
= 1A dI
F
/dt = 50 A/s V
R
=30V
65
90
I
RM
Reverse recovery
current
T
j
= 125C I
F
= 30A V
R
= 400V
dI
F
/dt = 100 A/s
11.5
16
A
t
fr
Forward recovery
time
T
j
= 25C
I
F
= 30A dI
F
/dt = 100 A/s
V
FR
= 1.1 x V
Fmax
500
ns
V
FP
Forward recovery
voltage
T
j
= 25C
I
F
= 30A dI
F
/dt = 100 A/s
V
FR
= 1.1 x V
Fmax
2.5
V
STTH60L06C
3/6
Figure 1: Conduction losses versus average
forward current (per diode)
Figure 2: Forward voltage drop versus forward
current (per diode)
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 4: Peak reverse recovery current versus
dI
F
/dt (typical values, per diode)
Figure 5: Reverse recovery time versus dI
F
/dt
(typical values, per diode)
Figure 6: Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
P(W)
T
=tp/T
tp
= 1
I
(A)
F(AV)
= 0.05
= 0.1
= 0.2
= 0.5
0
10
20
30
40
50
60
70
80
90
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I
(A)
FM
T =150C
(typical values)
j
T =25C
(maximum values)
j
V
(V)
FM
T =150C
(maximum values)
j
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
T
=tp/T
tp
0
5
10
15
20
25
30
35
40
45
0
50
100
150
200
250
300
350
400
450
500
I
(A)
RM
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
0
100
200
300
400
500
600
700
800
0
50
100
150
200
250
300
350
400
450
500
t (ns)
rr
dI /dt(A/s)
F
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
I =2 x I
F
F(AV)
0
500
1000
1500
2000
2500
3000
3500
0
100
200
300
400
500
Q (nC)
rr
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125C
R
j
dI /dt(A/s)
F
STTH60L06C
4/6
Figure 7: Reverse recovery softness factor
versus dI
F
/dt (typical values, per diode)
Figure 8: Relative variations of dynamic
parameters versus junction temperature
Figure 9: Transient peak forward voltage
versus dI
F
/dt (typical values, per diode)
Figure 10: Forward recovery time versus dI
F
/dt
(typical values, per diode)
Figure 11: Junction capacitance versus
reverse voltage applied (typical values, per
diode)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
250
300
350
400
450
500
S factor
dI /dt(A/s)
F
I < 2 x I
T =125C
F
F(AV)
j
V =400V
R
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
I
RM
t
rr
S factor
T (C)
j
I =I
Reference: T =125C
F
F(AV)
j
V =400V
R
Q
RR
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
350
400
450
500
V
(V)
FP
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
0
50
100
150
200
250
300
350
400
450
0
100
200
300
400
500
t (ns)
fr
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
V
=1.1 x V max.
FR
F
10
100
1000
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
STTH60L06C
5/6
Figure 12: TO-247 Package Mechanical Data
F2
F1
V2
L4
L2
L1
L3
D
L
L5
M
E
H
V
V
A
Dia.
F3
F4
G
= =
F(x3)
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
10.90
0.429
H
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L2
18.50
0.728
L3
14.20
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5
5
V2
60
60
Dia.
3.55
3.65 0.139
0.143
Table 7: Ordering Information
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1.0 m.N.
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STTH60L06CW
STTH60L06CW
TO-247
4.46 g
50
Tube
Table 8: Revision History
Date
Revision
Description of Changes
07-Sep-2004
1
First issue
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