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STTH802CT/CB/CFP
April 2002 - Ed: 1A
HIGH EFFICIENCY ULTRAFAST DIODE
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in DPAK, TO-220AB or TO-220FPAB.
This device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection applications.
DESCRIPTION
s
Suited for SMPS
s
Low losses
s
Low forward and reverse recovery times
s
High surge current capability
s
High junction temperature
s
Insulated package: TO-220FPAB
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(RMS)
RMS forward current
TO-220AB / TO-220FPAB / DPAK
10
A
I
F(AV)
Average forward
current
=0.5
TO-220AB / DPAK
Tc = 155C
Per diode
4
A
TO-220FPAB
Tc = 145C
TO-220AB / DPAK
Tc = 150C
Per device
8
A
TO-220FPAB
Tc = 130C
I
FSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
50
A
T
stg
Storage temperature range
- 65 + 175
C
Tj
Maximum operating junction temperature
175
C
ABSOLUTE RATINGS (limiting values)
I
F(AV)
2 x 4A
V
RRM
200 V
Tj (max)
175 C
V
F
(max)
0.95 V
trr (max)
20 ns
MAIN PRODUCT CHARACTERISTICS
A1
K
A2
TO-220FPAB
STTH802CFP
TO-220AB
STTH802CT
A1
A2
K
K
K
A1
A2
DPAK
STTH802CB
A1
A2
K
STTH802/CT/CB/CFP
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Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25C
V
R
= V
RRM
4
A
Tj = 125C
2
40
V
F
**
Forward voltage drop
Tj = 25C
I
F
= 4 A
1.1
V
Tj = 125C
I
F
= 4 A
0.81
0.95
Tj = 25C
I
F
= 8 A
1.25
Tj = 125C
I
F
= 8 A
0.95
1.1
Pulse test: * tp = 5ms,
< 2%
** tp = 380s,
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.80 x I
F(AV)
+ 0.037 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Maximum
Unit
R
th (j-c)
Junction to case
TO-220AB / DPAK
Per diode
4.0
C/W
TO-220FPAB
6.5
TO-220AB / DPAK
Total
2.5
TO-220FPAB
5
R
th (j-c)
Coupling
TO-220AB / DPAK
1
C/W
TO-220FPAB
3.5
When the diodes 1 and 2 are used simultaneously:
Tj (diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
THERMAL PARAMETERS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery
time
Tj = 25C
I
F
= 0.5 A Irr = 0.25 A
I
R
= 1A
13
20
ns
tfr
Forward recovery
time
Tj = 25C
I
F
= 4 A dI
F
/dt = 100 A/
s
V
FR
= 1.1 x V
F
max
50
ns
V
FP
Forward recovery
voltage
Tj = 25C
I
F
= 4 A dI
F
/dt = 100 A/
s
2.4
V
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH802/CT/CB/CFP
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0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
(A)
F(av)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
T
=tp/T
tp
P
(W)
F(av)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
10
20
30
40
50
60
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P = 5 W
P = 2 W
P = 10W
I (A)
M
T
=tp/T
tp
Fig. 2: Peak current versus form factor (per diode).
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
V
(V)
FM
Tj=25C
Maximum values
Tj=125C
Maximum values
Tj=125C
Maximum values
Tj=125C
Typical values
Tj=125C
Typical values
I
(A)
FM
Fig. 3:
Forward voltage drop versus forward
current (per diode).
0.0
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
tp(s)
Zth(j-c) / Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 4-2: Relative variation of thermal impedance
junction to case versus duration (TO-220FPAB).
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
Zth(j-c) / Rth(j-c)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 4-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
DPAK).
0
10
20
30
40
50
60
70
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
Tc=25C
Tc=75C
Tc=125C
I (A)
M
I
M
t
=0.5
Fig. 5-1:
Non repetitive surge peak forward
current versus overload duration per diode
(TO-220AB, DPAK).
STTH802/CT/CB/CFP
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0
10
20
30
40
50
60
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
Tc=25C
Tc=75C
Tc=125C
I (A)
M
I
M
t
=0.5
Fig. 5-2: Non repetitive surge peak forward
current versus overload duration per diode
(TO-220FPAB).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
25
50
75
100
125
150
175
Tamb(C)
Rth(j-a)=Rth(j-c)
DPAK (S=0.5cm)
Rth(j-a)=70C:W
TO-220AB/DPAK
TO-220FPAB
I
)(A)
F(av
Fig. 6: Average forward current versus ambient
temperature (
= 0.5, per diode).
10
100
1
10
100
1000
VR(V)
F=1MHz
Vosc=30mV
RMS
Tj=25C
C(pF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
10
100
1000
10
100
1000
dIF/dt(A/s)
IF=4A
VR=200V
Tj=125C
Q
(nC)
RR
Fig. 8: Reverse recovery charges versus dIF/dt
(90% confidence, per diode).
0.1
1.0
10.0
100.0
10
100
1000
dI /dt(A/s)
F
IF=4A
VR=200V
Tj=125C
I
(A)
RM
Fig. 9: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
25
50
75
100
125
150
Tj(C)
I
RM
Q
RR
I
F
=4A
V
R
=200V
Q
; I
[Tj] / Q
; I
[Tj = 125C]
RR
RM
RR
RM
Fig. 10: Dynamic parameters versus junction
temperature.
STTH802CT/CB/CFP
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0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
18
20
S(cm)
Rth
(CW)
(j-a)
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35m) for
DPAK.
PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
L2
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
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