March 2006
Rev 1
1/11
11
STTH812
Ultrafast recovery - 1200 V diode
Main product characteristics
Features and benefits
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Insulated packages:
TO-220Ins
Electrical insulation = 2500 V
RMS
Capacitance = 7 pF
TO-220FPAC
Electrical insulation = 2000 V
RMS
Capacitance = 12 pF
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage current,
and therefore thermal runaway guard band, is an
immediate competitive advantage for this device.
Order codes
I
F(AV)
8 A
V
RRM
1200 V
T
j
175 C
V
F
(typ)
1.25 V
t
rr
(typ)
50 ns
Part Number
Marking
STTH812D
STTH812D
STTH812G
STTH812G
STTH812G-TR
STTH812G
STTH812FP
STTH812FP
STTH812DI
STTH812DI
K
A
TO-220FPAC
STTH812FP
D
2
PAK
STTH812G
TO-220AC
STTH812D
K
K
A
A
K
A
NC
A
K
TO-220Ins
STTH812DI
www.st.com
Characteristics
STTH812
2/11
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.5 x I
F(AV)
+ 0.05 I
F
2
(RMS)
Table 1.
Absolute ratings (limiting values at 25 C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
1200
V
I
F(RMS)
RMS forward current
TO-220AC / D
2
PAK / TO-220FPAC
30
A
TO-220AC Ins
20
I
F(AV)
Average forward current,
= 0.5
TO-220AC / D
2
PAK
T
c
= 140 C
8
A
TO-220FPAC
T
c
= 75 C
TO-220AC Ins
T
c
= 115 C
I
FRM
Repetitive peak forward current
t
p
= 5 s, F = 5 kHz square
100
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms Sinusoidal
80
A
T
stg
Storage temperature range
-65 to + 175
C
T
j
Maximum operating junction temperature
175
C
Table 2.
Thermal parameters
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case
TO-220AC / D
2
PAK
1.9
C/W
TO-220FPAC
5.4
TO-220AC Ins
3.1
Table 3.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 C
V
R
= V
RRM
8
A
T
j
= 125 C
5
50
V
F
(2)
Forward voltage drop
T
j
= 25 C
I
F
= 8 A
2.2
V
T
j
= 125 C
1.30
2.0
T
j
= 150 C
1.25
1.9
1.
Pulse test: t
p
= 5 ms,
< 2 %
2.
Pulse test: t
p
= 380 s,
< 2 %
STTH812
Characteristics
3/11
Table 4.
Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/s,
V
R
= 30 V, T
j
= 25 C
100
ns
I
F
= 1 A, dI
F
/dt = -100 A/s,
V
R
= 30 V, T
j
= 25 C
50
70
I
RM
Reverse recovery current
I
F
= 8 A, dI
F
/dt = -200 A/s,
V
R
= 600 V, T
j
= 125 C
14
21
A
S
Softness factor
I
F
= 8 A, dI
F
/dt = -200 A/s,
V
R
= 600 V, T
j
= 125 C
2
t
fr
Forward recovery time
I
F
= 8 A dI
F
/dt = 50 A/s
V
FR
= 1.5 x V
Fmax
, T
j
= 25 C
400
ns
V
FP
Forward recovery voltage
I
F
= 8 A, dI
F
/dt = 50 A/s,
T
j
= 25 C
7
V
Figure 1.
Conduction losses versus
average current
Figure 2.
Forward voltage drop versus
forward current
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
P(W)
T
=tp/T
tp
= 0.05
= 1
I
(A)
F(AV)
= 0.1
= 0.2
= 0.5
0
10
20
30
40
50
60
70
80
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
(A)
FM
V
(V)
FM
T =25C
(maximum values)
j
T =150C
(maximum values)
j
T =150C
(typical values)
j
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z
/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
TO-220AC
D PAK
TO-220Ins
2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z
/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
TO-220FPAC
Characteristics
STTH812
4/11
Figure 5.
Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 6.
Reverse recovery time versus dI
F
/dt
(typical values)
0
5
10
15
20
25
30
35
0
50
100
150
200
250
300
350
400
450
500
I
(A)
RM
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =600V
T =125C
R
j
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
t (ns)
rr
dI /dt(A/s)
F
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
V =600V
T =125C
R
j
Figure 7.
Reverse recovery charges versus
dI
F
/dt (typical values)
Figure 8.
Softness factor versus dI
F
/dt
(typical values)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
50
100
150
200
250
300
350
400
450
500
Q (C)
rr
dI /dt(A/s)
F
V =600V
T =125C
R
j
I =2 x I
F
F(AV)
I =I
F
F(AV)
I =0.5 x I
F
F(AV)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
300
350
400
450
500
S factor
I
2xI
T =125C
F
F(AV)
j
V =600V
R
dI /dt(A/s)
F
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
Figure 10.
Transient peak forward voltage
versus dI
F
/dt (typical values)
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
25
50
75
100
125
I
RM
Q
RR
S factor
T (C)
j
I =I
Reference: T =125C
F
F(AV)
j
V =600V
R
t
rr
0
5
10
15
20
25
30
35
40
45
0
100
200
300
400
500
V
(V)
FP
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
STTH812
Characteristics
5/11
Figure 11.
Forward recovery time versus dI
F
/dt
(typical values)
Figure 12.
Junction capacitance versus
reverse voltage applied (typical
values)
Figure 13.
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, e
cu
= 35 m)
200
300
400
500
600
700
0
100
200
300
400
500
t (ns)
fr
dI /dt(A/s)
F
I =I
T =125C
F
F(AV)
j
V
=1.5 x V max.
FR
F
1
10
100
1000
1
10
100
1000
C(pF)
V (V)
R
F=1MHz
V
=30mV
T =25C
OSC
RMS
j
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
S
(cm)
CU
R
(C/W)
th(j-a)
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