1/8
December 2000
STV160NF03LA
N-CHANNEL 30V - 0.0021
- 160A PowerSO-10
STripFETTM POWER MOSFET
(1) V
DD
= 35V, I
D
= 45A, R
G
= 22
,
L = 330
H, Starting T
j
=25C
(**)Limited only maximum junction temperature allowed by
PowerSO-10
s
TYPICAL R
DS
(on) = 0.0021
s
LOW THRESHOLD DRIVE
s
ULTRA LOW ON-RESISTANCE
s
ULTRA FAST SWITCHING
s
100% AVALANCHE TESTED
s
VERY LOW GATE CHARGE
s
LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTION
The STV160NF03LA represents the second gen-
eration of Application Specific STMicroelectronics
well established STripFETTM process based on a
very unique strip layout design. The resulting
MOSFET shows unrivalled high packing density
with ultra low on-resistance and superior switching
charactestics. Process simplification also trans-
lates into improved manufacturing reproducibility.
This device is particularly suitable for high current,
low voltage switching application where efficiency
is crucial
APPLICATIONS
s
BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs DC-
DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
(
q
) Pulse width limited by safe operating area
Note: Marking will be STV160NF03AL
TYPE
V
DSS
R
DS(on)
I
D
STV160NF03LA
30 V
< 0.003
160 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate- source Voltage
15
V
I
D
(**)
Drain Current (continuos) at T
C
= 25C
160
A
I
D
Drain Current (continuos) at T
C
= 100C
113
A
I
DM
(
q
)
Drain Current (pulsed)
640
A
P
TOT
Total Dissipation at T
C
= 25C
210
W
Derating Factor
1.4
W/C
E
AS
(1)
Single Pulse Avalanche Energy
330
mJ
T
stg
Storage Temperature
65 to 175
C
T
j
Max. Operating Junction Temperature
175
C
PowerSO-10
1
10
INTERNAL SCHEMATIC DIAGRAM
CONNECTION DIAGRAM (TOP VIEW)
STV160NF03LA
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.71
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
50
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 15 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
1
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 80 A
V
GS
= 10 V, I
D
= 45 A
V
GS
= 8 V, I
D
= 80 A
V
GS
= 5 V, I
D
= 40 A
V
GS
= 10 V, I
D
=80 A;T
j
= 175 C
V
GS
= 8 V, I
D
=80 A; T
j
= 175 C
V
GS
= 5 V, I
D
=40 A; T
j
= 175 C
2.1
2.05
2.2
4.2
3
3
4
7
6.6
8.8
15.4
m
m
m
m
m
m
m
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
160
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 80 A
210
S
R
g
Gate resistance
V
DS
= 0 V, f = 1 MHz, V
GS
= 0
1.1
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
5350
1700
300
pF
pF
pF
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 0 V, f = 1 MHz, V
GS
= 0
8200
12400
5200
pF
pF
pF
L
S
Internal Source Inductance
From the Lead End (6mm from
Package Body) to the Die
Center
3
nH
L
D
Internal Drain Inductance
Not Available on Surface Mounting
Package
3/8
STV160NF03LA
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 15 V, I
D
= 80 A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
30
ns
t
r
Rise Time
380
ns
Q
g
Total Gate Charge
V
DD
= 24 V, I
D
= 160 A,
V
GS
= 10 V
123
160
nC
Q
gs
Gate-Source Charge
21
nC
Q
gd
Gate-Drain Charge
40
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
V
DD
= 15 V, I
D
= 80 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 5)
100
150
ns
ns
t
d(off)
t
r(Voff)
t
f
t
c
Turn-off Delay Time
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 24 V, I
D
= 40 A
R
G
= 4.7
,
V
GS
= 10V
95
35
75
110
ns
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
160
A
I
SDM
(1)
Source-drain Current (pulsed)
640
A
V
SD
(2)
Forward On Voltage
I
SD
= 160 A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 160A, di/dt = 100A/s,
V
DD
= 15V, T
j
= 25C
(see test circuit, Figure 5)
80
ns
Q
rr
Reverse Recovery Charge
180
nC
I
RRM
Reverse Recovery Current
4.5
A
Safe Operating Area
Thermal Impedance
STV160NF03LA
4/8
Output Characteristics
Tranconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Tranfer Characteristics
Static Drain-Source On Resistance
5/8
STV160NF03LA
Normalized On Resistance vs Temperature
Basic Schematic For Motherboard VRM Whith
Synchronous Rectification
Basic Schematic Mosfets Switch Used In
Secondary Side Of a Froward Convert
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp.
PDF 
ZIP