STV9379
VERTICAL DEFLECTION BOOSTER
August 1998
Output Stage Supply
Output
GND
Flyback Generator
Supply Voltage
Inverting Input
Tab connected to pin 4
7
6
5
4
3
2
1
Non-inverting Input
93
79
-
0
1
.
E
P
S
PIN CONNECTIONS
HEPTAWATT
(Plastic Package)
ORDER CODE : STV9379
.
POWER AMPLIFIER
.
FLYBACK GENERATOR
.
THERMAL PROTECTION
.
OUTPUT CURRENT UP TO 2.0A
PP
.
FLYBACK VOLTAGE UP TO 90V (on Pin 5)
.
SUITABLE FOR DC COUPLING APPLICATION
DESCRIPTION
Designed for monitors and high performance TVs,
the STV9379 vertical deflection booster delivers
flyback voltages close to 90V.
The STV9379 operateswith suppliesup to 42Vand
provides up to 2A
PP
output current to drive the
yoke.
The STV9379 is offered in HEPTAWATT package.
1/5
POWER
AMPLIFIER
4
5
7
1
2
3
6
INVERTING INPUT
NON-INVERTING INPUT
OUTPUT
GROUND OR NEGATIVE SUPPLY
SUPPLY
VOLTAGE
OUTPUT
STAGE
SUPPLY
FLYBACK
GENERATOR
STV9379
THERMAL
PROTECTION
FLYBACK
GENERATOR
9379
-
0
2
.
E
P
S
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
S
Supply Voltage (Pin 2) (see note 1)
50
V
V
6
Flyback Peak Voltage (Pin 6) (see note 1)
100
V
V
1
, V
7
Amplifier Input Voltage (Pins 1-7) (see note 1)
- 0.3, + V
S
V
I
O
Maximum Output Peak Current (see notes 2 and 3)
1.5
A
I
3
Maximum Sink Current (first part of flyback) (t < 1ms)
1.5
A
I
3
Maximum Source Current (t < 1ms)
1.5
A
V
ESD
ESD susceptibility : EIAJ Norm (200pF discharged through 0
)
300
V
T
oper
Operating Ambient Temperature
- 20, + 75
o
C
T
stg
Storage Temperature
- 40, + 150
o
C
T
j
Junction Temperature
+150
o
C
93
79
-
0
1
.
T
B
L
Notes :
1.
Versus Pin 4.
2.
The output current can reach 4A peak for t
10
s (up to 120Hz).
3.
Provided SOAR is respected (see Figures 1 and 2).
THERMAL DATA
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction-case Thermal Resistance
Max.
3
o
C/W
T
t
Temperature for Thermal Shutdown
150
o
C
T
t
Hysteresis on T
t
10
o
C
T
jr
Recommended Max. Junction Temperature
120
o
C
937
9-
0
2
.
T
B
L
STV9379
2/5
ELECTRICAL CHARACTERISTICS
(V
S
= 42V, T
A
= 25
o
C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
S
Operating Supply Voltage Range
Versus Pin 4
10
42
V
I
2
Pin 2 Quiescent Current
I
3
= 0, I
5
= 0
10
20
mA
I
6
Pin 6 Quiescent Current
I
3
= 0, I
5
= 0
5
10
30
mA
I
O
Max. Peak Output Current
1
A
I
1
Amplifier Bias Current
V
1
= 25V, V
7
= 26V
- 0.15
- 1
A
I
7
Amplifier Bias Current
V
1
= 26V, V
7
= 25V
- 0.15
- 1
A
V
IO
Offset Voltage
7
mV
V
IO
/dt
Offset Drift versus Temperature
- 10
V/
o
C
GV
Voltage Gain
80
dB
V
5L
Output Saturation Voltage to GND (Pin 4)
I
5
= 1A
1
1.5
V
V
5H
Output Saturation Voltage to Supply (Pin 6)
I
5
= - 1A
1.6
2.1
V
V
D5 - 6
Diode Forward Voltage between Pins 5-6
I
5
= 1A
1.5
2
V
V
D3 - 2
Diode Forward Voltage between Pins 3-2
I
3
= 1A
1.5
2
V
V
3L
Saturation Voltage on Pin 3
I
3
= 20mA
0.8
1.2
V
V
3SH
Saturation Voltage to Pin 2 (2nd part of flyback)
I
3
= - 1A
2.1
2.9
V
9379-
03
.
T
B
L
POWER
AMPLIFIER
4
5
7
1.5
R5
R3
R2
R4
R1
0.22
F
1
2
6
V
REF
Ly
Yoke
Rd (*)
+V
S
C
L
STV9379
THERMAL
PROTECTION
3
Ly
50
s
Ly
20
s
< Rd <
(*)
C
F
FLYBACK
GENERATOR
937
9-
0
3
.
E
P
S
APPLICATION CIRCUITS
AC COUPLING
STV9379
3/5
POWER
AMPLIFIER
4
5
7
1.5
R5
R2
R1
0.22
F
1
2
6
Ly
Yoke
Rd (*)
+V
S
STV9379
THERMAL
PROTECTION
3
Ly
50
s
Ly
20
s
< Rd <
(*)
FLYBACK
GENERATOR
Vertical
Position
Adjustment
V
REF
+
-V
EE
C
F
93
79
-
0
4
.
E
P
S
APPLICATION CIRCUITS (continued)
DC COUPLING
10
1
10
10
-1
-2
1
10
10
2
I
(A)
C
V
(V)
CE
@ T
case
= 25
C
t = 1ms
t = 10ms
t = 100ms
937
9-
05
.
E
P
S
Figure 1 : Output Transistors SOA
(for secondary breakdown)
100
90
80
70
60
25
50
75
100
125
ISB (%)
T
case
(
C)
937
9-
0
6
.
E
P
S
Figure 2 : SecondaryBreakdown Temperature
Derating Curve
(ISB = secondary breakdown current)
STV9379
4/5
PM
-
H
EPT
V
.
E
P
S
PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWATT
Dimensions
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.8
0.189
C
1.37
0.054
D
2.4
2.8
0.094
0.110
D1
1.2
1.35
0.047
0.053
E
0.35
0.55
0.014
0.022
F
0.6
08
0.024
0.031
F1
0.9
0.035
G
2.41
2.54
2.67
0.095
0.100
0.105
G1
4.91
5.08
5.21
0.193
0.200
0.205
G2
7.49
7.62
7.8
0.295
0.300
0.307
H2
10.4
0.409
H3
10.05
10.4
0.396
0.409
L
16.97
0.668
L1
14.92
0.587
L2
21.54
0.848
L3
22.62
0.891
L5
2.6
3
0.102
0.118
L6
15.1
15.8
0.594
0.622
L7
6
6.6
0.236
0.260
M
2.8
0.110
M1
5.08
0.200
Dia.
3.65
3.85
0.144
0.152
HE
P
T
V
.
T
B
L
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supe rsedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical comp onents in lifesupport devicesor systems
without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics - All Rights Reserved
Purchase of I
2
C Components of STMicroelectronics, conveys a license under the Philips I
2
C Patent.
Rights to use these components in a I
2
C system, is granted provided that the system conforms to
the I
2
C Standard Specifications as defined by Philips.
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STV9379
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