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July 2003
STW12NK90Z
N-CHANNEL 900V - 0.72
- 11A TO-247
Zener-Protected SuperMESHTM Power MOSFET
s
TYPICAL R
DS
(on) = 0.72
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
GATE CHARGE MINIMIZED
s
VERY LOW INTRINSIC CAPACITANCES
s
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established strip-
based PowerMESHTM layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmeshTM products.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
IDEAL FOR OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
I
D
Pw
STW12NK90Z
900 V
< 0.88
11 A
230 W
SALES TYPE
MARKING
PACKAGE
PACKAGING
STW12NK90Z
W12NK90Z
TO-247
TUBE
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STW12NK90Z
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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
SD
11A, di/dt
200 A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
900
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
900
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
11
A
I
D
Drain Current (continuous) at T
C
= 100C
7
A
I
DM
( )
Drain Current (pulsed)
44
A
P
TOT
Total Dissipation at T
C
= 25C
230
W
Derating Factor
1.85
W/C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
)
6000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
C
Rthj-case
Thermal Resistance Junction-case Max
0.54
C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
50
300
C/W
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
11
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
500
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= 1mA (Open Drain)
30
V
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STW12NK90Z
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 1 mA, V
GS
= 0
900
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
50
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 20V
10
A
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 A
3
3.75
4.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 5.5 A
0.72
0.88
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
= 15 V
,
I
D
= 5.5 A
11
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3500
280
58
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 800V
117
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
= 450 V, I
D
= 5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
31
20
88
55
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 720V, I
D
= 10 A,
V
GS
= 10V
113
19
60
152
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
11
44
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 11 A, V
GS
= 0
1.6
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 10 A, di/dt = 100A/s
V
DD
= 50 V
(see test circuit, Figure 5)
728
7.8
21.6
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 10 A, di/dt = 100A/s
V
DD
= 50 V, T
j
= 150C
(see test circuit, Figure 5)
964
11
23
ns
C
A
STW12NK90Z
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Thermal Impedance
Transconductance
Transfer Characteristics
Output Characteristics
Safe Operating Area
Static Drain-source On Resistance
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STW12NK90Z
Normalized On Resistance vs Temperature
Normalized BVDSS vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
Capacitance Variations
Gate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
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