1/8
May 2001
STW20NC50
N-CHANNEL 500V - 0.22
- 18.4A TO-247
PowerMeshTMII MOSFET
s
TYPICAL R
DS
(on) = 0.22
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
TM
II is
the evolution of the first
generation of MESH OVERLAY
TM.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
SWITH MODE LOW POWER SUPPLIES
(SMPS)
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW20NC50
500V
< 0.27
18.4A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
18.4
A
I
D
Drain Current (continuos) at T
C
= 100C
11.6
A
I
DM
(
q
)
Drain Current (pulsed)
73.6
A
P
TOT
Total Dissipation at T
C
= 25C
220
W
Derating Factor
1.75
W/C
dv/dt(1)
Peak Diode Recovery voltage slope
2
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
(1)I
SD
18.4A, di/dt
100A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
STW20NC50
2/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.57
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.1
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
20
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
960
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250A
2
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 9 A
0.22
0.27
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
18.4
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 9A
18
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2980
pF
C
oss
Output Capacitance
410
pF
C
rss
Reverse Transfer
Capacitance
58
pF
3/8
STW20NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 10A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
29
ns
t
r
Rise Time
21
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 20A,
V
GS
= 10V
95
128
nC
Q
gs
Gate-Source Charge
14.7
nC
Q
gd
Gate-Drain Charge
41.7
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 20A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
20
ns
t
f
Fall Time
21
ns
t
c
Cross-over Time
58
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
18.4
A
I
SDM
(2)
Source-drain Current (pulsed)
73.6
A
V
SD
(1)
Forward On Voltage
I
SD
= 18.4A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 20A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
480
ns
Q
rr
Reverse Recovery Charge
5
C
I
RRM
Reverse Recovery Current
21
A
Thermal Impedence
Safe Operating Area
STW20NC50
4/8
Static Drain-source On Resistance
Output Characteristics
Transfer Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/8
STW20NC50
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STW20NC50
6/8
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
7/8
STW20NC50
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
D
2.20
2.60
0.08
0.10
E
0.40
0.80
0.015
0.03
F
1
1.40
0.04
0.05
F1
3
0.11
F2
2
0.07
F3
2
2.40
0.07
0.09
F4
3
3.40
0.11
0.13
G
10.90
0.43
H
15.45
15.75
0.60
0.62
L
19.85
20.15
0.78
0.79
L1
3.70
4.30
0.14
0.17
L2
18.50
0.72
L3
14.20
14.80
0.56
0.58
L4
34.60
1.36
L5
5.50
0.21
M
2
3
0.07
0.11
V
5
5
V2
60
60
Dia
3.55
3.65
0.14
0.143
TO-247 MECHANICAL DATA
STW20NC50
8/8
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