1/11
ADVANCED DATA
June 2003
STP22NM60 - STF22NM60
STB22NM60 - STB22NM60-1 - STW22NM60
N-CHANNEL 600V - 0.19
- 22A TO-220/FP/D
2
PAK/I
2
PAK/TO-247
MDmeshTMPower MOSFET
1
2
3
1
3
1
2
3
TO-220FP
I
2
PAK
D
2
PAK
1
2
3
1
2
3
TO-220
TO-247
s
TYPICAL R
DS
(on) = 0.19
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
100% AVALANCHE TESTED
s
LOW INPUT CAPACITANCE AND GATE CHARGE
s
LOW GATE INPUT RESISTANCE
DESCRIPTION
This improved version of MDmeshTM which is based
on Multiple Drain process represents the new bench-
mark in high voltage MOSFETs. The resulting product
exhibits even lower on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company's proprietary strip technique
yields overall performances that are significantly better
than that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ORDERING INFORMATION
TYPE
V
DSS
R
DS(on)
R
ds(on)
*Q
g
I
D
STP22NM60
STF22NM60
STB22NM60
STB22NM60-1
STW22NM60
600 V
600 V
600 V
600 V
600 V
< 0.25
< 0.25
< 0.25
< 0.25
< 0.25
7.6
*nC
7.6
*nC
7.6
*nC
7.6
*nC
7.6
*nC
22 A
22 A
22 A
22 A
22 A
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP22NM60
P22NM60
TO-220
TUBE
STF22NM60
F22NM60
TO-220FP
TUBE
STB22NM60
B22NM60T4
D
PAK
TAPE & REEL
STB22NM60-1
B22NM60-1
I
PAK
TUBE
STW22NM60
W22NM60
TO-247
TUBE
INTERNAL SCHEMATIC DIAGRAM
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
2/11
ABSOLUTE MAXIMUM RATINGS
( )
Pulse width limited by safe operating area;
(*)Limited only by maximum temperature allowed
(1) I
SD
22A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Value
Unit
STP22NM60
STB22NM60/1
STF22NM60
STW22NM60
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
600
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
22
22 (*)
22
A
I
D
Drain Current (continuous) at T
C
= 100C
12.6
12.6 (*)
12.6
A
I
DM
( )
Drain Current (pulsed)
80
80(*)
80
A
P
TOT
Total Dissipation at T
C
= 25C
192
45
210
W
Derating Factor
1.2
0.36
1.2
W/C
dv/dt(1)
Peak Diode Recovery voltage slope
15
V/ns
V
ISO
Insulation Winthstand Voltage (DC)
--
2500
--
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-220/D
2
PAK/I
2
PAK/TO-247
TO-220FP
Rthj-case
Thermal Resistance Junction-case
Max
0.65
2.8
C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
62.5
C/W
T
l
Maximum Lead Temperature For Soldering
Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
11
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
650
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 C
1
10
A
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30 V
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 11 A
0.19
0.25
3/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
ELECTRICAL CHARACTERISTICS (CONTINUE)
DYNAMIC
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
(*) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 11 A
TBD
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1590
803
52
pF
pF
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400V
130
pF
R
g
Gate Input Resistance
f=1 MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 200 V, I
D
= 11 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
25
20
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V, I
D
= 22 A,
V
GS
= 10 V
40
11
25
71
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 480 V, I
D
= 22 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 5)
13
ns
t
f
Fall Time
15
ns
t
c
Cross-over Time
26
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
20
A
I
SDM
(2)
Source-drain Current (pulsed)
80
A
V
SD
(1)
Forward On Voltage
I
SD
= 22 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 22 A, di/dt = 100 A/s,
V
DD
= 100 V, T
j
= 25C
(see test circuit, Figure 5)
416
5.6
27
ns
C
A
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 22 A, di/dt = 100 A/s,
V
DD
= 100 V, T
j
= 150C
(see test circuit, Figure 5)
544
7.3
28
ns
C
A
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
4/11
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
6/11
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
L5
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
TO-220FP MECHANICAL DATA
7/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
1
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
8
0.315
E
10
10.4
0.393
E1
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0.015
V2
0
8
D
2
PAK MECHANICAL DATA
3
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
8/11
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
L
L1
B2
B
D
E
A
C2
C
A1
L2
e
P011P5/E
TO-262 (I
2
PAK) MECHANICAL DATA
9/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
TAPE AND REEL SHIPMENT (suffix "T4")*
TUBE SHIPMENT (no suffix)*
D
2
PAK FOOTPRINT
* on sales type
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A
330
12.992
B
1.5
0.059
C
12.8
13.2
0.504
0.520
D
20.2
0795
G
24.4
26.4
0.960
1.039
N
100
3.937
T
30.4
1.197
BASE QTY
BULK QTY
1000
1000
REEL MECHANICAL DATA
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413
0.421
B0
15.7
15.9
0.618
0.626
D
1.5
1.6
0.059
0.063
D1
1.59
1.61
0.062
0.063
E
1.65
1.85
0.065
0.073
F
11.4
11.6
0.449
0.456
K0
4.8
5.0
0.189
0.197
P0
3.9
4.1
0.153
0.161
P1
11.9
12.1
0.468
0.476
P2
1.9
2.1
0.075
0.082
R
50
1.574
T
0.25
0.35
0.0098 0.0137
W
23.7
24.3
0.933
0.956
TAPE MECHANICAL DATA
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
10/11
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.45
0.214
L
14.20
14.80
0.560
0.582
L1
3.70
4.30
0.14
0.17
L2
18.50
0.728
P
3.55
3.65
0.140
0.143
R
4.50
5.50
0.177
0.216
S
5.50
0.216
TO-247 MECHANICAL DATA
11/11
STP22NM60 / STF22NM60 / STB22NM60 / STB22NM60-1 - STW22NM60
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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