TRANSCEIVER MODULE
1/7
STW3100
February 2004
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
1
FEATURES
Triple-band (EGSM900 / DCS1800 / PCS1900).
Supports data transfer applications in multi-
slots GPRS class-12
EDGE Receive capability
Integrates:
BiCMOS6G RF transceiver
3 Receive Band Pass filters
3 Receive Matching Network between filters
output & LNA input
PLL loop filter
Decoupling / DC blocking capacitors
Insures compatibility with different Power
Modules
STW3102 Power Module
Power Module coming from the competition
RF interfaces:
Single-ended 50 ohms acceses
3 in Rx
2 in Tx
Noise Figure in
Low band : 5.5 dB typ
Hign bands : 6 dB typ
Transmit output level:
EGSM band : 1 or 5 dBm typ
DCS & PCS bands : 1 or 5 dBm typ
Standard Rx / Tx differential I/Q analogue
interface
Supply voltage range: 2.7V min / 3.3V max
Embedded voltage regulators to supply on chip
RF functions
Package:
Full lead-free
104 -BGA 7 x 7 pack
Temperature range:
Case operating temperature range:
-20/ +70C (fulfil specification)
ESD handling:
2 kV Human Body Model
Control interfaces:
Towards Baseband: 3-wire serial interface
with a Clock (Clk), enable (En) and a data line
(Data).
Towards Front-End functions 3 control pins
2
DESCRIPTION
In a 1.4 x 7 x 7mm low-profile Ball Grid Array pack-
age, the new modules integrate all of the key func-
tions, requiring only a 26MHz crystal and a power
amplifier module (PA+antenna switch functions) to
build a complete triple-band solution from antenna
to base band interface. Two versions are offered:
type STw3100 addresses the European
EGSM900, DCS1800, and PCS1900 bands while
the STw3101 targets the US GSM850, DCS1800,
and PCS1900 bands. The transceiver modules
are compatible with the STMicroelectronics
STw3102 power-amplifier module and most of the
standard power amplifiers available on the market.
LFBGA104 (7x7x1.4mm)
ORDERING NUMBER: STW3100
REV. 1.0 - PRODUCT PREVIEW
TRANSCEIVER MODULE
STW3100
2/7
3
ELECTRICAL CHARACTERISTICS
3.1 DC SECTION
Limiting value
DC characteristics
V
CC
= 2.7V;
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Absolute Maximum Ratings
V
CC
Maximum voltage supply
3.6
V
T
stg
Storage Temperature
-55
25
125
C
P
diss
Maximum Power dissipation
500
mW
Operating Functionality range
T
op
Operating Temperature
-40
25
85
C
V
CC
Supply voltage on Vcc_SYN and
Vcc_RX/TX pins
2.7
3.3
V
Operating Specified range
T
op
Operating Temperature
-20
25
70
C
V
CC
Supply voltage on Vcc_SYN and
Vcc_RX/TX pins
2.7
3.3
V
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Pin Vcc_syn
Icc
Supply current in power off mode
10
A
Icc
Supply current in REF mode
3
mA
Icc
Supply in Syn mode
35
mA
Pin Vcc_RX/TX
Icc
Supply current in power off mode
10
A
Icc
Supply current in RX mode
35
mA
Icc
Supply current in TX mode GSM
bands
88
mA
Icc
Supply current in TX mode DCS
or PCS bands
88
mA
Pin Vccreg_RFVCO
Vccreg
Internal regulated supply voltage
2
V
Pin Vccreg_TXVCO
Vccreg
Internal regulated supply voltage
2
V
Pin Vccreg_Digital
Vccreg
Internal regulated supply voltage
1.8
V
3/7
STW3100
3.2 Receive Section
Vcc = 2.7V;
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
f
RX2
Input Frequency
EGSM900
925
960
MHz
f
RX3
GSM1800
1805
1880
f
RX4
GSM1900
1930
1990
Zin
Input impedance
Single-Ended
50
VSWR_in
Input VSWR into 50 ohm
1.8
2.3
Ripple
Gain Flatness over the Frf
band
1
2
dB
Gmax
Total max gain
in 2Vpp Mode
74
79
dB
in 4Vpp Mode
80
85
G
Gain range
66
dB
AGC gain step
-
3
-
AGC linearity
-1
+1
dB
NF
Noise figure DSB
Low Band
5.5
dB
High Band
6
ICP-
1dB
1dB Input Compression Point
@ Low gain, 0kHz offset
Low Band
-23
-20
dBm
High Band
-26
-23
IIP3
Third Order Input Intercept
Point @ High Front-end gain
Low Band
-14
-10
dBm
High Band
-14
-12
IIP2
2
nd
Order Input Intercept Point
High Front-end gain
+44
dBm
C/N
Out-of-band Blocking (a, b, c, d)
in Low-Band & (a , d) in High-
Band
P
wanted
= -100 dBm,
P
interf
= -1 dBm
(1 dB Insertion Losses for
antenna switch)
9
dB
C/N
Out-of-band Blocking (c, b) in
High-Band
P
wanted
= -100 dBm,
P
interf
= -13 dBm
9
dB
C/N
In-Band Blocking @
|F-Fo|> 3 MHz
P
wanted
= -100 dBm,
P
interf
= -24 dBm (LB)
P
interf
= -27 dBm (HB)
9
dB
C/N
In-Band Blocking @
1.6 MHz < |F-Fo| < 3 MHz
P
wanted
= -100 dBm,
P
interf
= -34 dBm
9
dB
C/N
In-Band Blocking @
600 kHz < |F-Fo| < 1.6 MHz
P
wanted
= -100 dBm,
P
interf
= -44 dBm
9
dB
BW_GMSK
BW_EDGE
3 dB Channel bandwidth
after calibration
90
110
110
140
kHz
Att GMSK
Mode
Channel response attenuation
@ 200 kHz
@ 400 kHz
@ 600 kHz
15
50
58
18
51
62
dB
Att EDGE
Mode
Channel response attenuation
@ 200 kHz
@ 400 kHz
@ 600 kHz
4
45
52
7
48
55
dB
T
delay
Group delay variation
Between 0 & 67.7 kHz
1.8
2.5
us
Spurs
Spurious emission @ RF input
@ 9 kHz
-1 GHz
@ 1 GHz
- 12 75 GHz
-57
-47
dBm
STW3100
4/7
GIQ
I & Q Gain mismatch
-1
+1
dB
IQ
I & Q quadrature mismatch
-5
+5
deg
VCm
Output Common mode voltage
1.2
1.35
1.5
V
VSwing
Maximum single ended Output
Voltage
4Vpp mode
2Vpp mode
0.75
0.375
Vpk
Voffset
Differential Output
OffsetVoltage
after calibration
-150
20
+150
mV
Toffset
Offset voltage calibration
settling time (during the locking
time phase)
200
us
3.3 Transmit Section
Vcc = 2.7V;
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Pins ITX(+), ITX(-), QTX(+) and QTX(-)
F
mod
Modulation frequency range
3dB low pass
cut-off frequency
1
-
-
MHz
V
DC mod
Input Common mode voltage
0.8
1
1.4
V
V
mod
Modulation level
Single ended;
peak to peak value
0.8
1
1.2
Vpp
V
DC offset
Input DC offset permissible
Differential
10
mV
R
IN
Dynamic input resistance
Single ended
10
-
-
k
C
IN
Dynamic input capacitance
Single ended
-
-
20
pF
differential
56
RF Tx performances
f
TX2
Output frequency
EGSM900
880
915
MHz
f
TX3
GSM1800
1710
1785
f
TX4
GSM1900
1850
1910
Z
out
Output impedance
Single-Ended
50
VSWR_out
Output VSWR into 50 ohm
1.5
2
POUTGMSK Output power into 50 ohm load
Set to Pout _0
+1
dBm
Set to Pout _1
+5
ACPR400
ACPR @ 400 kHz offset
(BW = 30 kHz)
Low Band
-65
-62
dBc/
BW
High Band
-63
-61
N20MHz
Output Phase Noise @ 20 MHz
offset
Low Band
-164
-159
dBc/
Hz
High Band
-156
-152
RMS
RMS phase error
1.2
2.5
deg
H2LB
2
nd
Harmonic level
-20
dBc
H3LB
3
rd
Harmonic level
-20
dBc
IMout
Unwanted sideband suppression
-45
-35
dBc
Crej
Carrier rejection
-40
-32
dBc
3.2 Receive Section (continued)
Vcc = 2.7V;
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
5/7
STW3100
3.4 Frequency generation Section
Vcc = 2.7V;
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
RF synthesizer
Tlock_time
Settling Time
peak < 20
150
200
us
EGSM900 Frequency Range
880.2
959.8
MHz
DCS1800 Frequency Range
1710.2
1879.8
MHz
DCS1900 Frequency Range
1850.2
1989.8
MHz
Fchannnel
Channel spacing
200
kHz
Fstep
Synthesizer frequency step
(Fract-N PLL)
0.0022
ppm
DCXO
Fref
Reference Frequency (quartz
input)
26
MHz
Frange crystal Capacitor bank frequency range
-30
+30
ppm
Fstep crystal
Capacitor bank step
-
1
-
ppm
PDF 
ZIP