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PRELIMINARY DATA
June 2000
STW45NM50
N-CHANNEL 500V - 0.07
- 45A TO-247
MDmesh
TM
Power MOSFET
s
TYPICAL R
DS
(on) = 0.07
s
HIGH dv/dt AND AVALANCHE CAPABILITIES
s
100% AVALANCHE TESTED
s
LOW INPUT CAPACITANCE AND GATE
CHARGE
s
LOW GATE INPUT RESISTANCE
s
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh
TM
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESH
TM
horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmesh
TM
family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
(
)Pulse width limite d by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW45NM50
500V
<0.09
45 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25
C
45
A
I
D
Drain Current (continuos) at T
C
= 100
C
28.4
A
I
DM
(
q
)
Drain Current (pulsed)
180
A
P
TOT
Total Dissipation at T
C
= 25
C
260
W
Derating Factor
2.08
W/
C
dv/dt
Peak Diode Recovery voltage slope
6
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
STW45NM50
2/6
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25
C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Note: 1. Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
Rthj-case
Thermal Resistance Junction-case
Max
0.48
C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
30
C/W
Rthc-sink
Thermal Resistance Case-sink
Typ
0.1
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
45
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 50 V)
1400
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125
C
10
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 22.5A
0.07
0.09
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
45
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 22.5A
25
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
4400
pF
C
oss
Output Capacitance
710
pF
C
rss
Reverse Transfer
Capacitance
110
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.3
3/6
STW45NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 22.5A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
16
ns
t
r
Rise Time
8
ns
Q
g
Total Gate Charge
V
DD
= 400V, I
D
= 45A,
V
GS
= 10V
100
135
nC
Q
gs
Gate-Source Charge
33
nC
Q
gd
Gate-Drain Charge
83
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400V, I
D
= 45A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
14
ns
t
f
Fall Time
6
ns
t
c
Cross-over Time
13
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
45
A
I
SDM
(2)
Source-drain Current (pulsed)
180
A
V
SD
(1)
Forward On Voltage
I
SD
= 45A, V
GS
= 0
1.5
V
t
rr
Reverse Recovery Time
I
SD
= 45A, di/dt = 100A/
s,
V
DD
= 100V, T
j
= 150
C
(see test circuit, Figure 5)
270
ns
Q
rr
Reverse Recovery Charge
1.6
C
I
RRM
Reverse Recovery Current
100
A
STW45NM50
4/6
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/6
STW45NM50
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
TO-247 MECHANICAL DATA
STW45NM50
6/6
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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