1/6
ADVANCED DATA
January 2003
STW47NM50
N-CHANNEL 500V - 0.065
- 45A TO-247
MDmeshTMPower MOSFET
(1) I
SD
45A, di/dt
400A/s, V
DD
V
(BR)DSS
, T
j
T
JMAX.
TYPICAL R
DS
(on) = 0.065
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
R
ds(on)
*Q
g
I
D
STW47NM50
500V
< 0.085
5.6
*nC
45 A
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
500
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuous) at T
C
= 25C
45
A
I
D
Drain Current (continuous) at T
C
= 100C
28.4
A
I
DM
( )
Drain Current (pulsed)
180
A
P
TOT
Total Dissipation at T
C
= 25C
417
W
Derating Factor
2.08
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
15
V/ns
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
STW47NM50
2/6
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
CASE
= 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Rthj-case
Thermal Resistance Junction-case
Max
0.3
C/W
Rthj-amb
Thermal Resistance Junction-ambient
Max
30
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
20
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 35 V)
810
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
500
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
10
A
V
DS
= Max Rating, T
C
= 125 C
100
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30 V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V, I
D
= 22.5 A
0.065
0.085
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 22.5A
20
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
3700
pF
C
oss
Output Capacitance
610
pF
C
rss
Reverse Transfer
Capacitance
50
pF
C
oss eq.
(2)
Equivalent Output
Capacitance
V
GS
= 0V, V
DS
= 0V to 400V
325
pF
R
G
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.7
3/6
STW47NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
V
DD
= 250V, I
D
= 22.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
40
ns
t
r
Rise Time
35
ns
Q
g
Total Gate Charge
V
DD
= 400 V, I
D
= 45 A,
V
GS
= 10 V
87
117
nC
Q
gs
Gate-Source Charge
23
nC
Q
gd
Gate-Drain Charge
42
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 400 V, I
D
= 45 A,
R
G
= 4.7
,
V
GS
= 10 V
(see test circuit, Figure 5)
18
ns
t
f
Fall Time
23
ns
t
c
Cross-over Time
44
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
45
A
I
SDM
(2)
Source-drain Current (pulsed)
180
A
V
SD
(1)
Forward On Voltage
I
SD
= 45 A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A, di/dt = 100A/s,
V
DD
= 100 V, T
j
= 25C
(see test circuit, Figure 5)
520
7.8
30
ns
C
A
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 40 A, di/dt = 100A/s,
V
DD
= 100 V, T
j
= 150C
(see test circuit, Figure 5)
680
11.2
33
ns
C
A
STW47NM50
4/6
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/6
STW47NM50
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
D
2.20
2.60
0.08
0.10
E
0.40
0.80
0.015
0.03
F
1
1.40
0.04
0.05
F1
3
0.11
F2
2
0.07
F3
2
2.40
0.07
0.09
F4
3
3.40
0.11
0.13
G
10.90
0.43
H
15.45
15.75
0.60
0.62
L
19.85
20.15
0.78
0.79
L1
3.70
4.30
0.14
0.17
L2
18.50
0.72
L3
14.20
14.80
0.56
0.58
L4
34.60
1.36
L5
5.50
0.21
M
2
3
0.07
0.11
V
5
5
V2
60
60
Dia
3.55
3.65
0.14
0.143
TO-247 MECHANICAL DATA
STW47NM50
6/6
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