STX13003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
ST13003 SILICON IN TO-92 PACKAGE
s
MEDIUM VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STX13003 is designed for use in compact
fluorescent lamp application.
INTERNAL SCHEMATIC DIAGRAM
April 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
700
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
400
V
V
EBO
Emitter-Base Voltage
(I
C
= 0, I
B
= 0.5 A, t
p
< 10
s, T
j
< 150
o
C)
V
(BR)EBO
V
I
C
Collector Current
1
A
I
CM
Collector Peak Current (t
p
< 5 ms)
3
A
I
B
Base Current
0.5
A
I
BM
Base Peak Current (t
p
< 5 ms)
1.5
A
P
tot
Total Dissipation at T
C
= 25
o
C
1.5
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
TO-92
1/7
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
83.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 700V
V
CE
= 700V T
j
= 125
o
C
1
5
mA
mA
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10 mA
9
18
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA
L = 25 mH
400
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 0.1 A
I
C
= 1 A I
B
= 0.25 A
I
C
= 1.5 A I
B
= 0.5 A
0.5
1
3
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 0.1 A
I
C
= 1 A I
B
= 0.25 A
1
1.2
V
V
h
FE
DC Current Gain
I
C
= 0.5 A V
CE
= 2 V
I
C
= 1 A V
CE
= 2 V
8
5
35
25
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
I
C
= 1 A V
CC
= 125 V
I
B1
= 0.2 A I
B2
= -0.2 A
T
p
= 25
s
1
4
0.7
s
s
s
t
s
INDUCTIVE LOAD
Storage Time
I
C
= 1 A I
B1
= 0.2 A
V
BE
= -5 V L = 50 mH
V
clamp
= 300 V
0.8
s
Pulsed: Pulse duration = 300
s, duty cycle = 1.5 %.
Safe Operating Area
Output Characteristics
STX13003
2/7
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
1) Fast electronic switch
2) Non-inductive Resistor
STX13003
5/7
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