STZT2907
STZT2907A
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s
GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
s
PNP COMPLEMENTS ARE STZT2222 AND
STZT2222A RESPECTIVELY
INTERNAL SCHEMATIC DIAGRAM
October 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STZT2907
STZT2907A
V
CBO
Collector-Base Voltage (I
E
= 0)
-60
-60
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-40
-60
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-5
V
I
C
Collector Current
-0.8
A
P
tot
Total Dissipation at T
c
= 25
o
C
-1.5
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
2
3
SOT-223
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THERMAL DATA
R
th j-a mb
R
thj-tab
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Collecor Tab Max
83.3
10
o
C/W
o
C/W
Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= rated V
CBO
V
CB
= rated V
CBO
T
amb
= 125
o
C
-20
-10
nA
A
I
CEX
Collector Cut-off
Current (V
BE
= 0.5V)
V
CE
= -30 V for STZT2222A
-50
nA
I
BEX
Base Cut-off Current
(V
BE
= 0.5V)
V
CE
= -30 V for STZT2222A
-50
nA
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= -10
A
-60
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA
for STZT2907
for STZT2907A
-40
-60
V
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= -10
A
-5
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
-0.4
-1.6
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
-1.3
-2.6
V
V
h
FE
DC Current Gain
I
C
= -0.1 mA V
CE
= -10 V
for STZT2907
for STZT2907A
I
C
= -1 mA V
CE
= -10 V
for STZT2907
for STZT2907A
I
C
= -10 mA V
CE
= -10 V
for STZT2907
for STZT2907A
I
C
= -150 mA V
CE
= -10 V
I
C
= -500 mA V
CE
= -10 V
for STZT2907
for STZT2907A
35
75
50
100
75
100
100
10
50
300
f
T
Transition Frequency
I
C
= -10 mA V
CE
= -10 V f = 100 MHz
200
MHz
C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= -10 V f = 1 MHz
8
pF
C
EBO
Emitter-Base
Capacitance
I
C
= 0 V
EB
= -2 V f = 1 MHz
30
pF
t
d
Delay Time
I
C
= -150 mA I
B1
= -15 mA
V
CC
= -30 V
10
ns
t
r
Rise Time
40
ns
t
on
Turn-on Time
45
ns
t
s
Storage Time
I
C
= -150 mA I
B1
= -I
B1
= -15 mA
V
CC
= -30 V
80
ns
t
f
Fall Time
30
ns
t
off
Turn-off Time
100
ns
Pulsed: Pulse duration = 300
s, duty cycle
1.5 %
STZT2907/STZT2907A
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
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