TYP 212 --->TYP 2012
April 1995
SCR FOR OVERVOLTAGE PROTECTION
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180
conduction angle, single phase circuit)
Tc = 110
C
12
A
IT(AV)
Average on-state current
(180
conduction angle, single phase circuit)
Tc = 110
C
8
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp = 8.3 ms
315
A
tp = 10 ms
300
I2t
I2t value
tp = 10 ms
450
A2s
ITM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
Exponential pulse wave form
tp = 1 ms
750
A
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/
s
100
A/
s
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
C
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
C
TO220AB
(Plastic)
K
A
G
.
HIGH SURGE CURRENT CAPABILITY
.
HIGH dI/dt RATING
.
HIGH STABILITY AND RELIABILITY
DESCRIPTION
Symbol
Parameter
TYP
Unit
212
512
1012
2012
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
C
25
50
100
200
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TYP 212 ---> 1012 Family uses high perform-
ance glass passivated chips technology.
These Silicon Controlled Rectifiers are designed for
overvoltage protection in crowbar circuits applica-
tion.
1/5
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
C/W
Rth (j-c) DC Junction to case for DC
1.3
C/W
Symbol
Test Conditions
Value
Unit
IGT
VD=12V
(DC)
RL=33
Tj=25
C
MAX
30
mA
VGT
VD=12V
(DC)
RL=33
Tj=25
C
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj= 125
C
MIN
0.2
V
tgt
VD=VDRM IG = 200mA
dIG/dt = 1.5A/
s
Tj=25
C
TYP
1
s
IL
IG= 1.2 IGT
Tj=25
C
TYP
60
mA
IH
IT= 500mA gate open
Tj=25
C
MAX
50
mA
VTM
ITM= 50A
tp= 380
s
Tj=25
C
MAX
1.5
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
C
MAX
0.01
mA
Tj= 125
C
2
dV/dt
Linear slope up to VD=67%VDRM
gate open
Tj= 125
C
MIN
200
V/
s
tq
VD=67%VDRM
ITM= 50A
VR= 25V
dITM/dt=30 A/
s
dVD/dt= 50V/
s
Tj= 125
C
TYP
100
s
PG (AV) = 1W
PGM = 10W (tp = 20
s)
IFGM = 4A (tp = 20
s)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TYP 212 ---> TYP 2012
2/5
Fig.1 : Maximum average power dissipation versus
average on-state current.
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
Fig.5 : Relative variation of gate trigger current versus
junction temperature.
Fig.6 :
Non repetitive surge peak on-state current
versus number of cycles.
Fig.3
:
Average
on-state
current
versus
case
temperature.
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
0.01
0.1
1
Zth/Rth
Zt h( j-c )
Zt h( j-a )
tp (s )
Fig.4 :
Relative variation of thermal impedance versus
pulse duration.
TYP 212 ---> TYP 2012
3/5
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal
pulse
with
width
:
t
10
ms,
and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
Fig.9 : Peak capacitor discharge current versus pulse
width.
Fig.10 :
Allowable peak capacitor discharge current
versus initial junction temparature.
TYP 212 ---> TYP 2012
4/5
PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
A
G
J
H
D
B
C
M
L
F
O
P
= N =
I
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
10.00
10.40
0.393
0.409
B
15.20
15.90
0.598
0.625
C
13.00
14.00
0.511
0.551
D
6.20
6.60
0.244
0.259
F
3.50
4.20
0.137
0.165
G
2.65
2.95
0.104
0.116
H
4.40
4.60
0.173
0.181
I
3.75
3.85
0.147
0.151
J
1.23
1.32
0.048
0.051
L
0.49
0.70
0.019
0.027
M
2.40
2.72
0.094
0.107
N
4.80
5.40
0.188
0.212
O
1.14
1.70
0.044
0.066
P
0.61
0.88
0.024
0.034
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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TYP 212 ---> TYP 2012
5/5
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