May 1998 Ed : 1A
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(360
conduction angle)
Tc =110
C
8
A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp = 8.3 ms
85
A
tp = 10 ms
80
I
2
t
I
2
t value for fusing
tp = 10 ms
32
A
2
s
dI/dt
Critical rate of rise of on-state current
I
G
= 50mA di
G
/dt = 0.1A/
s
Repetitive
F = 50 Hz
20
A/
s
Non
Repetitive
100
Tstg
Tj
Storage temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
C
T
Maximum temperature for soldering during 10 s
260
C
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
T810-/T835-
Unit
400B
600B
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125
C
400
600
V
A1
A2
A2
G
DPAK
(Plastic)
T810-xxxB
T835-xxxB
HIGH PERFORMANCE TRIACS
I
TRMS
= 8 A
SENSITIVE GATE : I
GT
10mA and 35mA
HIGH COMMUTATION TECHNOLOGY
HIGH I
TSM
CAPABILITY
FEATURES
The T810-xxxB and T835-xxxB series are using
high performance TOPGLASS PNPN technology.
These devices are intented for AC control applica-
tions, using surface mount technology where high
commutating and surge performances are re-
quired (like power tools, Solid State Relay).
DESCRIPTION
1/5
P
G(AV)
= 1 W P
GM
= 10 W (tp = 20
s) I
GM
= 4 A (tp = 20
s)
GATE CHARACTERISTICS (maximum values)
Symbol
Test Conditions
Quadrant
Suffix
Unit
T810
T835
I
GT
V
D
=12V (DC) R
L
=33
Tj=25
C
I-II-III
MAX
10
35
mA
V
GT
V
D
=12V (DC) R
L
=33
Tj=25
C
I-II-III
MAX
1.3
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj=125
C
I-II-III
MIN
0.2
V
I
L
I
G
=1.2 I
GT
Tj=25
C
I-II-III
MAX
25
60
mA
I
H
*
I
T
= 100mA gate open
Tj=25
C
MAX
15
35
mA
V
TM
*
I
TM
= 11A tp= 380
s
Tj=25
C
MAX
1.5
V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25
C
MAX
10
A
Tj=125
C
MAX
2
mA
dV/dt *
Linear slope up to
V
D
=67%V
DRM
gate open
Tj=125
C
MIN
50
500
V/
s
(dI/dt)c *
(dV/dt)c = 0.1V/
s
Tj=125
C
MIN
5.4
9
A/ms
(dV/dt)c = 15V/
s
Tj=125
C
MIN
2.7
4.5
A/ms
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case for DC
2.1
C/W
Rth (j-c)
Junction to case for AC 360
conduction angle ( F= 50 Hz)
1.6
C/W
Rth (j-a)
Junction to ambient (S = 0.5 cm
2
)
70
C/W
THERMAL RESISTANCES
ORDERING INFORMATION Add "-TR" suffix for Tape and Reel shipment
T 8 10 - 600 B
TRIAC
CURRENT
SENSITIVITY
VOLTAGE
PACKAGE
B = DPAK
T810-xxxB / T835-xxxB
2/5
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
P(W)
I
(A)
T(RMS)
180
Fig 1a: Maximum power dissipation versus RMS
on-state current (T810 only).
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
P(W)
I
(A)
T(RMS)
180
Fig 1b: Maximum power dissipation versus RMS
on-state current. (T835 only)
0
25
50
75
100
125
0
2
4
6
8
10
P(W)
Tcase (C)
Rth=0C/W
Rth=5C/W
Rth=10 C/W
Rth=15 C/W
125
110
120
115
Tamb(C)
Fig 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tcase) for different thermal resistances
heatsink+contact.
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
I
(A)
T(RMS)
Tamb(C)
Fig 3: RMS on-state current versus ambient tem-
perature.
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
K=[Zth(j-c)/Rth(j-c)]
tp(s)
Fig 4: Relative variation of thermal impedance
junction to case versus pulse duration.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
I
,I [Tj]/I
,I [Tj=25C]
GT H
GT H
I
H
Tj(C)
I
GT
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
T810-xxxB / T835-xxxB
3/5
1
10
100
1000
0
10
20
30
40
50
60
70
80
I
(A)
TSM
Tj initial=25C
F=50Hz
Number of cycles
Fig 6: Non repetitive surge peak on-state current
versus number of cycles.
1
2
5
10
10
100
500
I
(A),It(As)
TSM
Tj initial=25C
ITSM
It
tp(ms)
Fig 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2
t.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
100.0
I
(A)
TM
Tj=25C
Tj max.:
Vto=0.8V
Rt=60m
Tj=Tj max.
V
(V)
TM
Fig 8: On-state characteristics (maximum values).
0
2
4
6
8
10
12
14
16
18
20
0
20
40
60
80
100
Rth(j-a) (C/W)
S(Cu) (cm)
Fig 9: Thermal resistance junction to ambient ver-
sus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35
m).
T810-xxxB / T835-xxxB
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
1998 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The
Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
PACKAGE MECHANICAL DATA
DPAK Plastic
H
L4
G
B
L2
E
B2
D
A1
C
A
C2
0.60 MIN.
V2
A2
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ.
Max
Min.
Typ. Max.
A
2.20
2.40 0.086
0.094
A1
0.90
1.10 0.035
0.043
A2
0.03
0.23 0.001
0.009
B
0.64
0.90 0.025
0.035
B2
5.20
5.40 0.204
0.212
C
0.45
0.60 0.017
0.023
C2
0.48
0.60 0.018
0.023
D
6.00
6.20 0.236
0.244
E
6.40
6.60 0.251
0.259
G
4.40
4.60 0.173
0.181
H
9.35
10.10 0.368
0.397
L2
0.80
0.031
L4
0.60
1.00 0.023
0.039
V2
0
8
0
8
WEIGHT : 0.30g
TYPE
MARKING
T810-400B
T8
1040
T810-600B
T8
1060
T835-400B
T8
3540
T835-600B
T8
3560
MARKING
FOOT PRINT (millimeters)
6.7
6.7
6.7
3
1.6
1.6
2.3
2.3
T810-xxxB / T835-xxxB
5/5
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