1/7
PRELIMINARY DATA
June 2002
STW18NB40
STH18NB40FI
N-CHANNEL 400V - 0.19
- 18.4 A TO-247/ISOWATT218
PowerMeshTM MOSFET
(1)I
SD
<18.4A, di/dt<200A/, V
DD
<V
(BR)DSS
,TJ<T
JMAX
INTERNAL SCHEMATIC DIAGRAM
s
TYPICAL R
DS
(on) = 0.19
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
VERY LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW18NB40
STH18NB40FI
400 V
400 V
< 0.26
< 0.26
18.4 A
12.4 A
Symbol
Parameter
Value
Unit
STW18NB40
STH18NB40FI
V
DS
Drain-source Voltage (V
GS
= 0)
400
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
400
V
V
GS
Gate- source Voltage
30
V
I
D
Drain Current (continuos) at T
C
= 25C
18.4
12.4
A
I
D
Drain Current (continuos) at T
C
= 100C
11.6
7.8
A
I
DM
(
l
)
Drain Current (pulsed)
73.6
73.6
A
P
TOT
Total Dissipation at T
C
= 25C
190
80
W
Derating Factor
1.52
0.64
W/C
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
4.5
V/ns
V
ISO
Insulation Withstand Voltage (DC)
-
2000
V
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-247
ISOWATT218
1
2
3
1
2
3
STW18NB40/STH18NB40FI
2/7
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
TO-247
ISOWATT218
Rthj-case
Thermal Resistance Junction-case Max
0.66
1.56
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
30
C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.1
C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300
C
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
18.4
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
450
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 A, V
GS
= 0
400
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1
A
V
DS
= Max Rating, T
C
= 125 C
50
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= 30V
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 A
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 6.2 A
0.19
0.26
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
18.4
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 9.2 A
9.3
S
C
iss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
2480
pF
C
oss
Output Capacitance
435
pF
C
rss
Reverse Transfer
Capacitance
47
pF
3/7
STW18NB40/STH18NB40FI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on Delay Time
Rise Time
V
DD
= 200 V, I
D
= 9.2 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
27
ns
t
r
14
ns
Q
g
Total Gate Charge
V
DD
= 320V, I
D
= 18.4 A,
V
GS
= 10V
60
84
nC
Q
gs
Gate-Source Charge
16
nC
Q
gd
Gate-Drain Charge
28.3
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
Off-voltage Rise Time
V
DD
= 320V, I
D
= 18.4 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
13
ns
t
f
Fall Time
15
ns
t
c
Cross-over Time
27
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain Current
18.4
A
I
SDM
(2)
Source-drain Current (pulsed)
73.6
A
V
SD
(1)
Forward On Voltage
I
SD
= 18.4 A, V
GS
= 0
1.6
V
t
rr
Reverse Recovery Time
I
SD
= 18.4 A, di/dt = 100A/s,
V
DD
= 100V, T
j
= 150C
(see test circuit, Figure 5)
480
ns
Q
rr
Reverse Recovery Charge
5.5
C
I
RRM
Reverse Recovery Current
23
A
STW18NB40/STH18NB40FI
4/7
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
5/7
STW18NB40/STH18NB40FI
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
D
2.20
2.60
0.08
0.10
E
0.40
0.80
0.015
0.03
F
1
1.40
0.04
0.05
F1
3
0.11
F2
2
0.07
F3
2
2.40
0.07
0.09
F4
3
3.40
0.11
0.13
G
10.90
0.43
H
15.45
15.75
0.60
0.62
L
19.85
20.15
0.78
0.79
L1
3.70
4.30
0.14
0.17
L2
18.50
0.72
L3
14.20
14.80
0.56
0.58
L4
34.60
1.36
L5
5.50
0.21
M
2
3
0.07
0.11
V
5
5
V2
60
60
Dia
3.55
3.65
0.14
0.143
TO-247 MECHANICAL DATA
6/7
STW18NB40/STH18NB40FI
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.211
0.222
C
3.30
3.80
0.130
0.150
D
2.90
3.10
0.114
0.122
D1
1.88
2.08
0.074
0.082
E
0.75
0.95
0.030
0.037
F
1.05
1.25
0.041
0.049
F2
1.50
1.70
0.059
0.067
F3
1.90
2.10
0.075
0.083
G
10.80
11.20
0.425
0.441
H
15.80
16.20
0.622
0.638
L
9
0.354
L1
20.80
21.20
0.819
0.835
L2
19.10
19.90
0.752
0.783
L3
22.80
23.60
0.898
0.929
L4
40.50
42.50
1.594
1.673
L5
4.85
5.25
0.191
0.207
L6
20.25
20.75
0.797
0.817
N
2.1
2.3
0.083
0.091
R
4.6
0.181
DIA
3.5
3.7
0.138
0.146
P025C/A
ISOWATT218 MECHANICAL DATA
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80
m
7/7
STW18NB40/STH18NB40FI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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