PRODUCT SELECTION GUIDE
PARAMETER
WS57C256F-55
WS57C256F-70
Address Access Time (Max)
55 ns
70 ns
Output Enable Time (Max)
25 ns
30 ns
WS57C256F
V
CC
A14
A13
A8
A9
A11
OE
A10
CE/PGM
O
7
O
6
O
5
O
4
O
3
V
PP
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
8
A
9
A
11
NC
OE
A
10
CE/PGM
O
7
O
6
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
O
0
A
7
A
12
V
PP
NC
V
CC
A
14
A
13
O
1
O
2
NC
O
3
O
4
O
5
1
4 3
2
32 31 30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
14 15 16 17 18 19 20
GND
TOP VIEW
Chip Carrier
CERDIP
PIN CONFIGURATION
4-17
MILITARY HIGH SPEED 32K x 8 CMOS EPROM
KEY FEATURES
Fast Access Time
EPI Processing
-- 55 ns
-- Latch-up Immunity Up to 200 mA
Low Power Consumption
Standard EPROM Pinout
DESC SMD No. 5962-86063
GENERAL DESCRIPTION
The WS57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is
manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 55 ns
Access Time.
Two major features of the WS57C256F are its Low Power and High Speed. While operating in a TTL environment it
consumes less than 120 mA while cycling at full speed. Additionally, the WS57C256F can be placed in a standby
mode which drops operating current below 5 mA in a TTL environment and 500 A in a CMOS environment.
The WS57C256F also has exceptional output drive capability. It can source 4 mA and sink 16 mA per output.
The WS57C256F is configured in the standard EPROM pinout which provides an easy upgrade path for systems
which are currently using standard EPROMs.
PINS
CE/
OE
A9
A0 VPP VCC OUTPUTS
MODE
PGM
Read
VIL
VIL
X
X
VCC VCC
DOUT
Output
Disable
X
VIH
X
X
VCC VCC
High Z
Standby
VIH
X
X
X
VCC VCC
High Z
Program
VIL
VIH
X
X
VPP
2
VCC
DIN
Program
Verify
X
VIL
X
X
VPP
2
VCC
DOUT
Program
Inhibit
VIH VIH
X
X
VPP
2
VCC
High Z
Signature
3
VIL
VIL VH
2
VIL VCC VCC
23 H
4
VIL
VIL VH
2
VIH VCC VCC
EO H
5
MODE SELECTION
NOTES:
1. X can be V
IL
or V
IH
.
4. Manufacturer Signature.
2. V
IH
= V
PP
= 12.75 0.25 V.
5. Device Signature.
3. A1 A8, A10 A14 = V
IL
.
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ORDERING INFORMATION
SPEED
PACKAGE
PACKAGE
OPERATING WSI
PART NUMBER
(ns)
TYPE
DRAWING
TEMPERATURE
MANUFACTURING
RANGE
PROCEDURE
WS57C256F-55CMB
55
32 Pad CLLCC
C2
Military
MIL-STD-883C
WS57C256F-55DMB
55
28 Pin CERDIP, 0.6"
D2
Military
MIL-STD-883C
WS57C256F-55TMB
55
28 Pin CERDIP, 0.3"
T2
Military
MIL-STD-883C
WS57C256F-70CMB
*
70
32 Pad CLLCC
C2
Military
MIL-STD-883C
WS57C256F-70DMB
*
70
28 Pin CERDIP, 0.6"
D2
Military
MIL-STD-883C
WS57C256F
4-18
NOTES: The actual part marking will not include the initials "WS."
*
SMD product. See page 4-1 for DESC SMD number.
PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS
REFER TO
PAGE 5-1
The WS57C256F is programmed using Algorithm D shown on page 5-9.
For complete data sheet and electrical specifications see page 3-13.
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