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Электронный компонент: Z00607DA1BA2

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Z00607MA
Z00607DA
May 1999 - Ed: 1
SENSITIVE GATE TRIACS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(360
conduction angle)
Tl= 50
C
0.8
A
I
TSM
Non repetitive surge peak on-state current
(T
j
initial = 25
C )
tp = 8.3 ms
10.5
A
tp = 10 ms
10
Non repetitive surge peak on-state current
(T
j
initial = 110
C, full cycle)
F = 60Hz
8
I
2
t
I
2
t Value for fusing
tp = 10 ms
0.5
A
2
s
T
stg
T
j
Storage and operating junction temperature range
- 40, + 150
- 40, + 110
C
Tl
Maximum lead temperature for soldering during 10s
260
C
ABSOLUTE RATINGS (limiting values)
I
T(RMS)
= 0.8A
V
DRM
= 400V and 600V
I
GT
= 5mA
FEATURES
Symbol
Parameter
Z00607xA
Unit
D
M
V
DRM
V
RRM
Repetitive peak off-state voltage
T
j
= 110
C
400
600
V
The Z006607xA triacs are intended for general
applications where high gate sensitivity is
required.
DESCRIPTION
A1
A2
G
A2
A1
G
TO92
(Plastic)
1/4
P
G (AV)
= 0.1 W P
GM
= 2 W (tp = 20
s) I
GM
= 1 A (tp = 20
s)
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
150
C/W
Rth(j-l)
Junction to lead
60
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Quadrant
Sensitivity
Unit
07
I
GT
V
D
=12V (DC) R
L
=140
Tj= 25
C
I-II-III
MAX
5
mA
IV
MAX
7
V
GT
V
D
=12V (DC) R
L
=140
Tj= 25
C
I-II-III-IV
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 110
C
I-II-III-IV
MIN
0.2
V
tgt
V
D
=V
DRM
I
G
= 25mA
I
T
= 1.0A
dI
G
/dt = 0.25A/
s
Tj= 25
C
I-II-III-IV
TYP
2
s
I
H
*
I
T
= 200 mA Gate open
Tj= 25
C
MAX
5
mA
I
L
I
G
= 1.2 I
GT
Tj= 25
C
I-III-IV
MAX
10
mA
II
MAX
20
V
TM
*
I
TM
= 1.1A tp= 380
s
Tj= 25
C
MAX
1.5
V
I
DRM
I
RRM
V
D
= V
DRM
V
R
= V
RRM
Tj= 25
C
MAX
10
A
Tj= 110
C
MAX
0.1
mA
dV/dt *
VD=67%V
DRM
Gate open
Tj= 110
C
MIN
10
V/
s
(dV/dt)c *
(dI/dt)c = 0.35 A/ms
Tj= 110
C
MIN
1.5
V/
s
* For either polarity of electrode A
2
voltage with reference to electrode A
1
ELECTRICAL CHARACTERISTICS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P(W)
=180
=120
=90
=60
=30
IT(RMS)(A)
180
Fig 1: Maximum power dissipation versus RMS
on-state current.
0
10
20
30
40
50
60
70
80
90 100 110
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P(W)
Tlead (C)
Rth(j-a)
Rth(j-l)
=180
110
50
70
90
Tamb(C)
Fig 2: Correlation between maximum power dissi-
pation and maximum allowable temperatures
(Tamb and Tlead).
Z00607DA / Z00607MA
2/4
1
2
5
10
0.1
1.0
10.0
50.0
ITSM(A),It(As)
Tj initial=25C
ITSM
It
tp(ms)
Fig 7: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I
2
t.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
1.0
10.0
ITM(A)
Tj=25C
Tj max.:
Vto= 0.95 V
Rd= 420 m
Tj=Tj max.
VTM(V)
Fig 8: On-state characteristics (maximum values).
-40
-20
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH[Tj] / IGT,IH[Tj=25C]
IGT
IH
Tj(C)
Fig 5: Relative variation of gate trigger current and
holding current versus junction temperature (typi-
cal values).
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
ITSM(A)
Tj initial=25C
F=50Hz
Number of cycles
Fig 6: Non repetitive surge peak on-state current
versus number of cycles.
0
10
20
30
40
50
60
70
80
90 100 110
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IT(RMS)(A)
=180
Rth(j-a)=Rth(j-l)
Rth(j-a)=150C/W
Tamb(C)
Fig 3: RMS on-state current versus ambient tem-
perature.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
K=[Zth(j-a)/Rth(j-a)]
tp(s)
Fig 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Z00607DA / Z00607MA
3/4
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PACKAGE MECHANICAL DATA
TO92 (Plastic)
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters
Inches
Typ.
Min. Max. Typ.
Min. Max.
A
1.35
0.053
B
4.70
0.185
C
2.54
0.100
D
4.40
0.173
E
12.70
0.500
F
3.70
0.146
a
0.45
0.017
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
Z00607DA 1BA2
Z0607DA
TO92
0.2g.
2500
Bulk
Z00607MA 1BA2
Z0607MA
TO92
0.2g.
2500
Bulk
Z00607DA / Z00607MA
4/4