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Электронный компонент: Z01xxxN

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Z01 Series
STANDARD
1A TRIAC
S
July 2003 - Ed: 5
MAIN FEATURES:
DESCRIPTION
The Z01 series is suitable for general purpose AC
switching applications. They can be found in
applications such as home appliances
(electrovalve, pump, door lock, small lamp
control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
Symbol
Value
Unit
I
T(RMS)
1
A
V
DRM
/V
RRM
600 to 800
V
I
GT (Q
1
)
3 to 25
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
SOT-223
Ttab = 90C
1
A
TO-92
TI = 50C
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25C)
F = 50 Hz
t = 20 ms
8
A
F = 60 Hz
t = 16.7 ms
8.5
I
t
I
t Value for fusing
tp = 10 ms
0.35
A
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 120 Hz
Tj = 125C
20
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
1
A
P
G(AV)
Average gate power dissipation
Tj = 125C
0.1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
G
A2
A1
A2
A1
A2
G A2
A1
TO-92
(Z01xxA)
SOT-223
(Z01xxN)
Z01 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
THERMAL RESISTANCES
S = Copper surface under tab
Symbol
Test Conditions
Quadrant
Z01xx
Unit
03
07
09
10
I
GT
(1)
V
D
= 12 V R
L
= 30
I - II - III
IV
MAX.
3
5
5
7
10
10
25
25
mA
V
GT
ALL
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125C
ALL
MIN.
0.2
V
I
H
(2)
I
T
= 50 mA
MAX.
7
10
10
25
mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
7
10
15
25
mA
II
15
20
25
50
dV/dt (2)
V
D
= 67 %V
DRM
gate open Tj = 110C
MIN.
10
20
50
100
V/s
(dV/dt)c (2)
(dI/dt)c = 0.44 A/ms
Tj = 110C
MIN.
0.5
1
2
5
V/s
Symbol
Test Conditions
Value
Unit
V
TM
(2)
I
TM
= 1.4 A tp = 380 s
Tj = 25C
MAX.
1.6
V
V
to
(2)
Threshold voltage
Tj = 125C
MAX.
0.95
V
R
d
(2)
Dynamic resistance
Tj = 125C
MAX.
400
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
5
A
Tj = 125C
0.5
mA
Symbol
Parameter
Value
Unit
R
th(j-t)
Junction to tab (AC)
SOT-223
25
C/W
R
th(j-l)
Junction to lead (AC)
TO-92
60
R
th(j-a)
Junction to ambient
S = 5 cm
SOT-223
60
C/W
TO-92
150
Z01 Series
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PRODUCT SELECTOR
ORDERING INFORMATION
Part Number
Voltage
Sensitivity
Type
Package
600 V
700 V
800 V
Z0103MA
X
3 mA
Standard
TO-92
Z0103MN
X
3 mA
Standard
SOT-223
Z0103SA
X
3 mA
Standard
TO-92
Z0103SN
X
3 mA
Standard
SOT-223
Z0103NA
X
3 mA
Standard
TO-92
Z0103NN
X
3 mA
Standard
SOT-223
Z0107MA
X
5 mA
Standard
TO-92
Z0107MN
X
5 mA
Standard
SOT-223
Z0107SA
X
5 mA
Standard
TO-92
Z0107SN
X
5 mA
Standard
SOT-223
Z0107NA
X
5 mA
Standard
TO-92
Z0107NN
X
5 mA
Standard
SOT-223
Z0109MA
X
10 mA
Standard
TO-92
Z0109MN
X
10 mA
Standard
SOT-223
Z0109SA
X
10 mA
Standard
TO-92
Z0109SN
X
10 mA
Standard
SOT-223
Z0109NA
X
10 mA
Standard
TO-92
Z0109NN
X
10 mA
Standard
SOT-223
Z0110MA
X
25 mA
Standard
TO-92
Z0110MN
X
25 mA
Standard
SOT-223
Z0110SA
X
25 mA
Standard
TO-92
Z0110SN
X
25 mA
Standard
SOT-223
Z0110NA
X
25 mA
Standard
TO-92
Z0110NN
X
25 mA
Standard
SOT-223
Z 01 03 M A 1AA2
TRIAC
SERIES
CURRENT: 1A
SENSITIVITY:
03: 3mA
07: 5mA
09: 10mA
10: 25mA
VOLTAGE:
M: 600V
S: 700V
N: 800V
PACKAGE:
A: TO-92
N: SOT-223
PACKING MODE:
1AA2: TO-92 bulk (preferred)
2AL2: TO-92 ammopack
5AA4: SOT-223 Tape & reel
Blank
Z01 Series
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OTHER INFORMATION
Note: xx = sensitivity, y = voltage
Part Number
Marking
Weight
Base
quantity
Packing
mode
Z01xxyA 1AA2
Z01xxyA
0.2 g
2500
Bulk
Z01xxyA 2AL2
Z01xxyA
0.2 g
2000
Ammopack
Z0103yN 5AA4
Z3y
0.12 g
1000
Tape & reel
Z0107yN 5AA4
Z7y
0.12 g
1000
Tape & reel
Z0109yN 5AA4
Z9y
0.12 g
1000
Tape & reel
Z0110yN 5AA4
Z0y
0.12 g
1000
Tape & reel
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2-1: RMS on-state current versus ambient
temperature (full cycle).
Fig. 2-2: RMS on-state current versus ambient
temperature (full cycle).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
P(W)
IT(RMS)(A)
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Tl or Ttab (C)
IT(RMS)(A)
SOT-223
(Rth(j-a)=Rth(j-t))
TO-92
(Rth(j-a=Rth(j-l))
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Tamb(C)
IT(RMS)(A)
TO-92
Rth(j-a)=150C/W
SOT-223
(Rth(j-a)=60C/W)
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.01
0.10
1.00
K=[Zth(j-a)/Rth(j-a)]
Z01xxxN
Z01xxxA
tp(s)
Z01 Series
5/7
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of It.
Fig. 7: On-state characteristics (maximum
values).
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
Tj(C)
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25C]
IGT
IH & IL
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
ITSM(A)
Non repetitive
Tj initial=25C
Repetitive
Tamb=25C
One cycle
t=20ms
Number of cycles
0.01
0.10
1.00
10.00
0.1
1.0
10.0
100.0
tp (ms)
ITSM (A), It (As)
Tj initial=25C
ITSM
It
dI/dt limitation:
20A/s
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.1
1.0
10.0
ITM(A)
Tj=25C
Tj max.
Vto= 0.95 V
Rd= 420 m
Tj=Tj max.
VTM(V)
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
Z0103
Z0107
Z0110
Z0109
(dV/dt)c (V/s)
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj (C)