1
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DN2535
DN2540
Advanced DMOS Technology
Not recommended for new designs. For products in TO-92
(N3) package and TO-243AA (N8) package, please use DN3535
or DN3545 instead.
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex's
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
Drain-to-Gate Voltage
BV
DGX
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55C to +150C
Soldering Temperature*
300C
*
Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
Package Options
N-Channel Depletion-Mode
Vertical DMOS FETs
TO-92
S G D
TO-243AA
(SOT-89)
G
D
S
D
TO-220
TAB: DRAIN
G
D
S
Product marking for TO-243AA:
DN5D
Where
= 2-week alpha date code
*
Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
BV
DSX
/
R
DS(ON)
I
DSS
BV
DGX
(max)
(min)
TO-92
TO-220
TO-243AA*
350V
25
150mA
DN2535N3
DN2535N5
--
400V
25
150mA
DN2540N3
DN2540N5
DN2540N8
Ordering Information
Order Number / Package
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
DN2540
400
V
V
GS
= -5V, I
D
= 100A
DN2535
350
V
GS(OFF)
Gate-to-Source OFF Voltage
1.5
3.5
V
V
DS
= 25V, I
D
= 10A
V
GS(OFF)
Change in V
GS(OFF)
with Temperature
4.5
mV/C
V
DS
= 25V, I
D
= 10A
I
GSS
Gate Body Leakage Current
100
nA
V
GS
= 20V, V
DS
= 0V
I
D(OFF)
Drain-to-Source Leakage Current
10
A
V
GS
= -10V, V
DS
= Max Rating
1
mA
V
GS
= -10V, V
DS
= 0.8 Max Rating
T
A
= 125C
I
DSS
Saturated Drain-to-Source Current
150
mA
V
GS
= 0V, V
DS
= 25V
R
DS(ON)
Static Drain-to-Source
17
25
V
GS
= 0V, I
D
= 120mA
ON-State Resistance
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.1
%/C
V
GS
= 0V, I
D
= 120mA
G
FS
Forward Transconductance
325
m
I
D
= 100mA, V
DS
= 10V
C
ISS
Input Capacitance
200
300
V
GS
= -10V, V
DS
= 25V
C
OSS
Common Source Output Capacitance
12
30
pF
f = 1 MHz
C
RSS
Reverse Transfer Capacitance
1
5
t
d(ON)
Turn-ON Delay Time
10
V
DD
= 25V,
t
r
Rise Time
15
ns
I
D
= 150mA,
t
d(OFF)
Turn-OFF Delay Time
15
R
GEN
= 25
t
f
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= -10V, I
SD
= 120mA
t
rr
Reverse Recovery Time
800
ns
V
GS
= -10V, I
SD
= 1A
Notes:
1.
All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Electrical Characteristics
(@ 25C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
Switching Waveforms and Test Circuit
DN2535/DN2540
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
120mA
500mA
1.0W
125
170
120mA
500mA
TO-220
500mA
500mA
15.0W
8.3
70
500mA
500mA
TO-243AA
170mA
500mA
1.6W (T
A
= 25)
15
78
170mA
500mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate. T
A
= 25C
Thermal Characteristics
3
Output Characteristics
0.5
0.4
0.3
0.2
0.1
0
0
80
160
240
320
400
V
DS
(volts)
Transconductance vs. Drain Current
Power Dissipation vs. Temperature
0
150
100
50
10
20
0
125
75
25
TO-220
TO-92
TO-243AA
V
GS
= 1.0V
0.5V
-0.5V
-1.0V
0V
Saturation Characteristics
250
200
150
100
50
0
0
1
2
3
5
4
V
GS
= 1.0V
0.5V
0V
-0.5V
-1.0V
Maximum Rated Safe Operating Area
1
1000
100
10
1
0.1
0.01
0.001
TO-92/TO-220 (pulsed)
SOT-89 (DC)
T
C
= 25C
(TA = 25C)
TO-220 (DC)
TO-92 (DC)
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
0
TO-243AA
T
A
= 25C
P
D
= 1.6W
0.5
0.4
0.3
0.2
0.1
0
0
250
50
100
150
200
V
DS
= 10V
T
A
= -55C
T
A
= 25C
T
A
= 125C
TO-220
T
C
= 25C
P
D
= 15W
TO-92
T
C
= 25C
P
D
= 1.0W
(TA = 25C)
I
D
(amperes)
I
D
(milliamps)
V
DS
(volts)
G
FS
(siemens)
I
D
(milliamps)
T
C
(C)
P
D
(watts)
V
DS
(volts)
I
D
(amperes)
t
p
(seconds)
DN2535/DN2540
Typical Performance Curves
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
12/13/010
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
BV
DSS
Variation with Temperature
BV
DSS
Normalized
1.1
1.05
1.0
0.95
0.9
-50
0
80
160
240
320
400
0
50
100
150
Transfer Characteristics
V
GS
(Volts)
V
DS
(Volts)
I
D
(amperes)
0.40
0.32
0.24
0.16
0.08
0
-3
2
-1
0
1
2
Capacitance Vs. Drain-to-Source Voltage
C (Picofarads)
200
150
100
50
0
0
10
20
30
40
V
GS
= -5V
V
GS
= 0V
V
DS
= 10V
V
GS
= -10V
C
OSS
C
RSS
C
ISS
T
A
= -55C
T
A
= 25C
R
DS (ON)
@ I
D
= 120mA
V
GS(OFF)
@ 10A
V
DS
= 20V
V
DS
= 40V
200pF
170pF
T
A
= 125C
On-Resistance vs. Drain Current
100
80
60
40
20
0
Q
C
(Nanocoulombs)
R
DS(on)
(Ohms)
-50
0
50
100
150
0
0.4
0.8
1.2
1.6
2.0
V
GS(off)
and R
DS
Variation with Temperature
2.5
2
1.5
1
0.5
0
15
10
5
0
-5
T
j
(C)
Normalized
Gate Drive Dynamic Characteristics
V
GS
(Volts)
T
j
(C)
I
D
(milliamps)
DN2535/DN2540
Typical Performance Curves
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