1
08/22/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DN3145
Advanced DMOS Technology
These depletion-mode (normally-on) transistors utilize an ad-
vanced vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Initial Release
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Constant current sources
Power supply circuits
Telecom
Package Options
N-Channel Depletion-Mode Vertical DMOS FETs
Note: See Package Outline section for dimensions.
BV
DSX
/
R
DS(ON)
I
DSS
BV
DGX
(max)
(min)
TO-243AA*
450V
60
120mA
DN3145N8
Ordering Information
Order Number / Package
*
Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
Product marking for TO-243AA:
Where
= 2-week alpha date code
DN1M
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSX
Drain-to-Gate Voltage
BV
DGX
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
G
D
S
D
TO-243AA
(SOT-89)
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
08/22/02
2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-243AA
100mA
300mA
1.3W
34
97
100mA
300mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSX
Drain-to-Source
450
V
V
GS
= -5V, I
D
= 100
A
Breakdown Voltage
V
GS(OFF)
Gate-to-Source OFF Voltage
1.5
3.5
V
V
DS
= 15V, I
D
= 10
A
V
GS(OFF)
Change in V
GS(OFF)
with Temperature
4.5
mV/
C
V
DS
= 15V, I
D
= 10
A
I
GSS
Gate Body Leakage Current
100
nA
V
GS
=
20V, V
DS
= 0V
I
D(OFF)
Drain-to-Source Leakage Current
1.0
A
V
GS
= -5.0V, V
DS
= Max Rating
1.0
mA
V
GS
= -5.0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
DSS
Saturated Drain-to-Source Current
120
mA
V
GS
= 0V, V
DS
= 15V
R
DS(ON)
Static Drain-to-Source
60
V
GS
= 0V, I
D
= 100mA
ON-State Resistance
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.1
%/
C
V
GS
= 0V, I
D
= 100mA
G
FS
Forward Transconductance
140
m
I
D
= 100mA, V
DS
= 10V
C
ISS
Input Capacitance
120
V
GS
= -5.0V, V
DS
= 25V
C
OSS
Common Source Output Capacitance
15
pF
f = 1.0 MHz
C
RSS
Reverse Transfer Capacitance
10
t
d(ON)
Turn-ON Delay Time
10
V
DD
= 25V,
t
r
Rise Time
15
ns
I
D
= 100mA,
t
d(OFF)
Turn-OFF Delay Time
20
R
GEN
= 25
t
f
Fall Time
35
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= -5.0V, I
SD
= 100mA
t
rr
Reverse Recovery Time
800
ns
V
GS
= -5.0V, I
SD
= 100mA
Notes:
1.
All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2.
All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
C unless otherwise specified)
DN3145
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