1
01/06/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
LP0701
P-Channel Enhancement-Mode
Lateral MOSFET
BV
DSS
/
R
DS(ON)
I
D(ON)
V
GS(th)
BV
DGS
(max)
(min)
(max)
TO-92
SO-8
Die
-16.5V
1.5
-1.25A
-1.0V
LP0701N3
LP0701LG
LP0701ND
Ordering Information
Order Number / Package
Advanced MOS Technology
These enhancement-mode (normally-off) transistors utilize a lat-
eral MOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and negative temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown. The low threshold voltage and low on-
resistance characteristics are ideally suited for hand held battery
operated applications.
Applications
Logic level interfaces
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
10V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Features
Ultra low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Freedom from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Package Options
(Note 1)
Note: See Package Outline section for dimensions.
Low Threshold
S G D
TO-92
1
2
3
4
8
7
6
5
SO-8
top view
NC
D
NC
D
S
D
G
D
2
LP0701
Package
I
D
(continuous)*
I
D
(pulsed)*
Power Dissipation
jc
ja
I
DR
I
DRM
*
@ T
C
= 25
C
C/W
C/W
TO-92
-0.5A
-1.25A
1W
125
170
-0.5A
-1.25A
SO-8
-0.7A
-1.25A
1.5W
83
104
-0.7A
-1.25A
* I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-16.5
V
V
GS
= 0V, I
D
= -1mA
V
GS(th)
Gate Threshold Voltage
-0.5
-0.7
-1.0
V
V
GS
= V
DS
, I
D
= -1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.0
mV/
C
V
GS
= V
DS
, I
D
= -1mA
I
GSS
Gate Body Leakage
-100
nA
V
GS
=
10V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
-100
nA
V
DS
= -15V, V
GS
= 0V
-1.0
mA
V
DS
= 0.8 Max Rating,
V
GS
= 0V, TA = 125
C
-0.4
V
GS
= V
DS
= -2V
I
D(ON)
ON-State Drain Current
-0.6
-1.0
V
GS
= V
DS
= -3V
-1.25
-2.3
A
V
GS
= V
DS
= -5V
2.0
4.0
V
GS
= -2V, I
D
= -50mA
R
DS(ON)
1.7
2.0
V
GS
= -3V, I
D
= -150mA
1.3
1.5
V
GS
= -5V, I
D
= -300mA
R
DS(ON)
Change in R
DS(ON)
with temperature
0.75
%/
C
V
GS
= -5V, I
D
= -300mA
G
FS
Forward Transconductance
500
700
m
V
DS
= -15V, I
D
= -1A
C
ISS
Input Capacitance
120
250
C
OSS
Common Source Output Capacitance
100
125
pF
V
GS
= 0V, V
DS
= -15V, f = 1MHz
C
RSS
Reverse Transfer Capacitance
40
60
t
d(ON)
Turn-ON Delay Time
20
t
r
Rise Time
20
V
DD
=-15V, I
D
= -1.25A,
t
d(OFF)
Turn-OFF Delay Time
30
R
GEN
= 25
t
f
Fall Time
30
V
SD
Diode Forward Voltage Drop
-1.2
-1.5
V
V
GS
= 0V, I
SD
= -500mA
Note 1:
All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
Note 2:
All A.C. parameters sample tested.
A
Electrical Characteristics
(@ 25
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
ns
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
3
LP0701
Saturation Characteristics
0
-1
-2
-3
-5
-4
Maximum Rated Safe Operating Area
-0.1
-100
-10
-1.0
-0.1
-1.0
-10
-0.01
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1.0
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0
-2.0
-1.0
Power Dissipation vs. Case Temperature
0
150
100
50
2
1
0
125
75
25
T
A
= -55
C
TO-92 (DC)
SO-8 (DC)
T
C
= 25
C
TO-92
TO-92/SO-8 (pulsed)
V
GS
= -5V
-4V
-3V
-2V
-1V
-2.5
-2.0
-1.5
-1.0
-0.5
0
0
Output Characteristics
-2.5
-2.0
-1.5
-1.0
-0.5
0
0
-4
-8
-12
-16
V
GS
= -5V
-4V
-3V
-2V
-1V
I
D
(amperes)
I
D
(amperes)
V
DS
(volts)
V
DS
(volts)
G
FS
(siemens)
P
D
(watts)
V
DS
= -15V
T
A
= 25
C
T
A
= 125
C
T
C
(
C)
I
D
(amperes)
I
D
(amperes)
V
DS
(volts)
t
P
(seconds)
TO-92
T
C
= 25
C
P
D
= 1W
SO-8
Typical Performance Curves
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
01/06/03
2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
LP0701
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
200
C (picofarads)
0
-5
-10
-15
100
0
-1
-2
-3
-4
-5
-2
-1
-50
0
50
100
150
1.1
10
8
6
4
2
0
0
-3
1.4
1.2
1.0
0.8
0.6
0.4
1.6
1.4
1.2
1.0
0.8
0.6
-10
-8
-6
-4
-2
0
0
1
2
3
4
5
-50
0
50
100
150
238pF
T
A
= -55
C
f = 1MHz
-1
-2
-20V
0
V
DS
= -15V
0.9
1.0
C
ISS
= 115pF
V
(th)
@ -1mA
R
DS(ON)
@ -5V, -300mA
0
V
GS
= -3V
V
GS
= -5V
T
A
= 25
C
T
A
= 125
C
V
GS
= -2V
I
D
(amperes)
T
j
(
C)
R
DS(ON)
(ohms)
I
D
(amperes)
V
GS
(volts)
T
j
(
C)
V
DS
= -10V
V
DS
(volts)
V
GS
(volts)
C
ISS
C
OSS
C
RSS
Typical Performance Curves
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