7-35
7
Low Threshold
TN0106
TN0110
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
DSS
/
R
DS(ON)
I
D(ON)
V
GS(th)
BV
DGS
(max)
(min)
(max)
TO-92
Die
60V
3.0
2A
2.0V
TN0106N3
--
100V
3.0
2A
2.0V
TN0110N3
TN0110ND
MIL visual screening available
Order Number / Package
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Features
s
s
Low threshold -- 2.0V max.
s
s
High input impedance
s
s
Low input capacitance -- 50pF typical
s
s
Fast switching speeds
s
s
Low on resistance
s
s
Free from secondary breakdown
s
s
Low input and output leakage
s
s
Complementary N- and P-channel devices
Applications
s
s
Logic level interfaces ideal for TTL and CMOS
s
s
Solid state relays
s
s
Battery operated systems
s
s
Photo voltaic drives
s
s
Analog switches
s
s
General purpose line drivers
s
s
Telecom switches
Note: See Package Outline section for dimensions.
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D
7-36
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
0.5A
2.0A
1.0W
125
170
0.5A
2.0A
*
I
D
(continuous) is limited by max rated T
j
.
TN0106/TN0110
Thermal Characteristics
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
TN0110
100
TN0106
60
V
GS(th)
Gate Threshold Voltage
0.6
2.0
V
V
GS
= V
DS
, I
D
= 0.5mA
V
GS(th)
Change in V
GS(th)
with Temperature
-3.2
-5.0
mV/
C
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
V
GS
= 0V, V
DS
= Max Rating
500
A
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.75
1.4
V
GS
= 5V, V
DS
= 25V
2.0
3.4
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
2.0
4.5
V
GS
= 4.5V, I
D
= 250mA
1.6
3.0
V
GS
= 10V, I
D
= 500mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.6
1.1
%/
C
I
D
= 0.5A, V
GS
= 10V
G
FS
Forward Transconductance
225
400
m
V
DS
= 25V, I
D
= 500mA
C
ISS
Input Capacitance
50
60
C
OSS
Common Source Output Capacitance
25
35
pF
C
RSS
Reverse Transfer Capacitance
4.0
8.0
t
d(ON)
Turn-ON Delay Time
2.0
5.0
t
r
Rise Time
3.0
5.0
t
d(OFF)
Turn-OFF Delay Time
6.0
7.0
t
f
Fall Time
3.0
6.0
V
SD
Diode Forward Voltage Drop
1.0
1.5
V
I
SD
= 0.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
400
ns
I
SD
= 0.5A, V
GS
= 0V
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
V
I
D
= 1mA, V
GS
= 0V
Drain-to-Source
Breakdown Voltage
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Static Drain-to-Source
ON-State Resistance
V
DD
= 25V
ns
I
D
= 1.0A
R
GEN
= 25
Electrical Characteristics
(@ 25
C unless otherwise specified)
7-37
7
Typical Performance Curves
TN0106/TN0110
Output Characteristics
5
4
3
2
1
0
10
20
30
50
40
V
DS
(volts)
I
(amperes)
D
Saturation Characteristics
5
4
3
2
1
0
2
4
6
10
8
V
DS
(volts)
I
(amperes)
D
Maximum Rated Safe Operating Area
1
1000
100
10
0.1
1.0
10
0.01
V
DS
(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
0.5
0.4
0.3
0.2
0.1
0
0
3.0
.6
1.2
1.8
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0
150
100
50
10
8
6
4
2
125
75
25
T
C
C)
(
D
P
(watts)
V
DS
= 25V
8V
6V
4V
2V
TO-92
TO-92
T
C
= 25
C
P
D
= 1W
TO-92 (DC)
TO-92 (pulsed)
8V
6V
4V
2V
2.4
0
0
0
0
T
A
= -55
C
V
GS
= 10V
V
GS
= 10V
T
A
= 25
C
T
A
= 150
C
T
C
= 25
C
7-38
TN0106/TN0110
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
T
j
GS(th)
V
(normalized)
DS(ON)
R
(normalized)
V
DS
(th)
and R
Variation with Temperature
C)
(
On-Resistance vs. Drain Current
(amperes)
D
(ohms)
DS(ON)
R
Variation with Temperature
DSS
DSS
BV
(normalized)
C)
(
T
j
Transfer Characteristics
V
GS
(volts)
I
(amperes)
D
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
V
DS
(volts)
I
BV
0
10
20
30
40
75
50
25
0
2
4
6
8
10
3.0
2.4
1.8
1.2
0.6
-50
0
50
100
150
1.3
1.2
0.8
5.0
2.0
0
5.0
3.0
1.4
1.2
1.0
0.8
0.6
0.4
1.4
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0
1.0
2.0
3.0
4.0
5.0
-50
0
50
100
150
f = 1MHz
4.0
3.0
1.0
0
1.0
2.0
4.0
40V
0
0.9
1.0
1.1
50pF
0
0
V
GS
= 5V
V
GS
= 10V
V
DS
= 25V
T
A
= -55
C
25
C
150
C
V
(th)
@ 0.5mA
R
DS(ON)
@ 10V, 0.5A
C
ISS
C
OSS
C
RSS
V
DS
= 10V
55pF
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