7-51
7
BV
DSS
/ R
DS(ON)
I
D(ON)
V
GS(th)
BV
DGS
(max)
(min)
(max)
TO-92
TO-220
60V
1.5
3.0A
2.0V
TN0606N3
TN0606N5
100V
1.5
3.0A
2.0V
TN0610N3
--
MIL visual screening available
TN0606
TN0610
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Order Number / Package
Note:
1.
See Package Outline section for dimensions
Package Options
Features
s
Low threshold -- 2.0V max.
s
High input impedance
s
Low input capacitance -- 100pF typical
s
Fast switching speeds
s
Low on resistance
s
Free from secondary breakdown
s
Low input and output leakage
s
Complementary N- and P-channel devices
Applications
s
Logic level interfaces ideal for TTL and CMOS
s
Solid state relays
s
Battery operated systems
s
Photo voltaic drives
s
Analog switches
s
General purpose line drivers
s
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
TO-220
G
D
S
TAB: DRAIN
TO-92
S G D
7-52
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
0.8A
3.2A
1W
125
170
0.8A
3.2A
TO-220
3.0A
4.1A
45W
2.7
70
3.0A
4.1A
*
I
D
(continuous) is limited by max rated T
j
.
TN0606/TN0610
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
TN0610
100
TN0606
60
V
GS(th)
Gate Threshold Voltage
0.6
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.5
mV/
C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
1.0
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C (note 2)
I
D(ON)
ON-State Drain Current
1.2
2.0
V
GS
= 5V, V
DS
= 25V
3.0
6.7
V
GS
= 10V, V
DS
= 25V
15
V
GS
= 3V, I
D
= 0.25A
R
DS(ON)
1.5
2.0
V
GS
= 5V, I
D
= 0.75A
1.0
1.5
V
GS
= 10V, I
D
= 0.75A
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.75
%/
C
V
GS
= 10V, I
D
= 0.75A
G
FS
Forward Transconductance
0.4
0.5
V
DS
= 25V, I
D
= 1.0A
C
ISS
Input Capacitance
100
150
C
OSS
Common Source Output Capacitance
50
85
C
RSS
Reverse Transfer Capacitance
10
35
t
d(ON)
Turn-ON Delay Time
6
t
r
Rise Time
14
t
d(OFF)
Turn-OFF Delay Time
16
t
f
Fall Time
16
V
SD
Diode Forward Voltage Drop
0.8
1.8
V
V
GS
= 0V, I
SD
= 1.5A
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= 1.5A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
V
V
GS
= 0V, I
D
= 1mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
pF
Electrical Characteristics
(@ 25
C unless otherwise specified)
V
DD
= 25V
ns
I
D
= 1.5A
R
GEN
= 25
7-53
7
TN0606/TN0610
Typical Performance Curves
Output Characteristics
10
8
6
4
2
0
10
20
30
50
40
V
DS
(volts)
I
(amperes)
D
Saturation Characteristics
10
8
6
4
2
0
5V
7V
4V
6V
8V
V
DS
(volts)
I
(amperes)
D
Maximum Rated Safe Operating Area
0.1
1.0
10
0.01
V
DS
(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
1
10
2
4
6
8
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
0
150
100
50
50
40
30
20
10
125
75
25
T
C
C)
(
D
P
(watts)
5V
10V
7V
3V
6V
8V
9V
1
1000
100
10
1
10
2
4
6
8
10V
3V
TO-220
TO-92
TO-220 (DC)
V
GS
=
V
DS
= 25V
T
A
= -55
C
T
A
= 25
C
T
A
= 150
C
T
C
= 25
C
TO-220
P
D
= 45W
T
C
= 25
C
V
GS
=
0
0
0
9V
TO-92 (DC)
TO-92
P
D
= 1W
T
C
= 25
C
7-54
TN0606/TN0610
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
T
j
GS(th)
V
(normalized)
DS(ON)
R
(normalized)
V
DS
(th)
and R
Variation with Temperature
C)
(
On-Resistance vs. Drain Current
(amperes)
D
(ohms)
DS(ON)
R
Variation with Temperature
DSS
DSS
BV
(normalized)
C)
(
T
j
Transfer Characteristics
V
GS
(volts)
I
(amperes)
D
Capacitance vs. Drain-to-Source Voltage
200
150
100
50
0
C (picofarads)
V
DS
(volts)
I
BV
0
10
20
30
40
0
2
4
6
8
10
10
8
6
4
2
0
-50
0
50
100
150
1.1
1.0
0.9
5
4
3
2
1
0
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0
10
8
6
4
2
0
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
95 pF
V
DS
= 40V
V
DS
= 10V
172 pF
(th)
V @ 1mA
V
GS
= 5V
V
GS
= 10V
T
= -55
A
C
V
DS
= 25V
C
ISS
C
OSS
C
RSS
25 C
150 C
0
2
4
6
10
8
R @ 10V, 0.75A
DS
f = 1MHz
0
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