7-55
7
BV
DSS
/
R
DS(ON)
I
D(ON)
V
GS(th)
BV
DGS
(max)
(min)
(max)
200V
6.0
1.0A
1.6V
TN0620N3
TN0620N5
MIL visual screening available
TN0620
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
TO-92
TO-220
Order Number / Package
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
s
s
Low threshold -- 1.6V max.
s
s
High input impedance
s
s
Low input capacitance -- 110pF typical
s
s
Fast switching speeds
s
s
Low on resistance
s
s
Free from secondary breakdown
s
s
Low input and output leakage
s
s
Complementary N- and P-channel devices
Applications
s
s
Logic level interfaces ideal for TTL and CMOS
s
s
Solid state relays
s
s
Battery operated systems
s
s
Photo voltaic drives
s
s
Analog switches
s
s
General purpose line drivers
s
s
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
Package Options
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
TO-92
S G D
G
D
S
TO-220
TAB: DRAIN
7-56
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
50
INPUT
OUTPUT
10V
V
DD
0V
0V
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
V
V
GS
= 0V, I
D
= 2.0mA
V
GS(th)
Gate Threshold Voltage
0.6
1.6
V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS(th)
Change in V
GS(th)
with Temperature
-5.0
mV/
C
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
1.0
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.5
V
GS
= 5V, V
DS
= 25V
1.0
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
6.0
8.0
V
GS
= 5V, I
D
= 0.25A
4.0
6.0
V
GS
= 10V, I
D
= 0.5A
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.4
%/
C
V
GS
= 10V, I
D
= 0.5A
G
FS
Forward Transconductance
300
400
m
V
DS
= 25V, I
D
= 0.5A
C
ISS
Input Capacitance
110
150
C
OSS
Common Source Output Capacitance
40
85
pF
C
RSS
Reverse Transfer Capacitance
10
35
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
8
t
d(OFF)
Turn-OFF Delay Time
20
t
f
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= 0V, I
SD
= 1.0A
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= 1.0A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
TN0620
Thermal Characteristics
Electrical Characteristics
(@ 25
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
A
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
0.4A
2.0A
1W
125
170
0.4A
2.0A
TO-220
1.5A
2.5A
45W
2.7
70
1.5A
2.5A
*
I
D
(continuous) is limited by max rated T
j
.
ns
V
DD
= 25V
I
D
= 1.0A
R
GEN
= 25
7-57
7
Output Characteristics
4.0
3.2
2.4
1.6
0.8
0
10
20
30
50
40
V
DS
(volts)
I
(amperes)
D
Saturation Characteristics
4.0
3.2
2.4
1.6
0.8
0
0
2
4
6
10
8
3V
10V
2V
4V
6V
8V
V
DS
(volts)
I
(amperes)
D
Maximum Rated Safe Operating Area
1
1000
100
10
0.1
1.0
10
0.01
V
DS
(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0
2.5
0.5
1.0
1.5
2.0
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Case Temperature
50
40
30
20
10
0
0
150
100
50
125
75
25
T
C
C)
(
D
P
(watts)
10V
8V
6V
4V
3V
2V
TO-220
TO-39
TO-92
V
DS
= 25V
T
A
= -55
C
T
A
= 25
C
T
C
= 25
C
TO-220
P
D
= 45W
T
C
= 25
C
T
A
= 150
C
V
GS
=
0
0
TO-220 (DC)
TO-92 (DC)
V
GS
=
TO-92
P
D
= 1W
T
C
= 25
C
Typical Performance Curves
TN0620
7-58
TN0620
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
T
j
GS(th)
V
(normalized)
DS(ON)
R
(normalized)
V
DS
(th)
and R
Variation with Temperature
C)
(
On-Resistance vs. Drain Current
(amperes)
D
(ohms)
DS(ON)
R
Variation with Temperature
DSS
DSS
BV
(normalized)
C)
(
T
j
Transfer Characteristics
V
GS
(volts)
I
(amperes)
D
Capacitance vs. Drain-to-Source Voltage
200
150
100
50
0
C (picofarads)
V
DS
(volts)
I
BV
0
10
20
30
40
0
2
4
6
8
10
4.0
3.2
2.4
1.6
0.8
0
-50
0
50
100
150
1.1
1.0
0.9
15
12
9
6
3
0
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0
10
8
6
4
2
0
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
100 pF
V
DS
= 40V
V
DS
= 10V
178 pF
(th)
V @ 1mA
V
GS
= 5V
V
GS
= 10V
T
= -55
C
A
V
DS
= 25V
C
ISS
C
OSS
C
RSS
0
0.8
1.6
2.4
4.0
3.2
R @ 10V, 0.5A
DS
f = 1MHz
0
T
= 25
C
A
T
= 150
C
A
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