7-71
TN2106
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
Package Options
BV
DSS
/
R
DS(ON)
V
GS(th)
BV
DGS
(max)
(max)
TO-236AB*
TO-92
Die
60V
2.5
2.0V
TN2106K1
TN2106N3
TN2106ND
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Order Number / Package
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1L
p
where
p
= 2-week alpha date code
TO-236AB
(SOT-23)
top view
Gate
Source
Drain
S G D
TO-92
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
7-72
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-236AB
0.28A
0.8A
0.36W
200
350
0.28A
0.8A
TO-92
0.30A
1.0A
0.74W
125
170
0.30A
1.0A
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
60
V
I
D
= 1mA, V
GS
= 0V
V
GS(th)
Gate Threshold Voltage
0.6
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-3.8
-5.5
mV/
C
I
D
= 1mA, V
GS
= V
DS
I
GSS
Gate Body Leakage
0.1
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1
A
V
GS
= 0V, V
DS
= Max Rating
100
A
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.6
A
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
5.0
V
GS
= 4.5V, I
D
= 200mA
2.5
V
GS
= 10V, I
D
= 500mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.70
1.0
%/
C
V
GS
= 10V, I
D
= 500mA
G
FS
Forward Transconductance
150
400
m
V
DS
= 25V, I
D
= 500mA
C
ISS
Input Capacitance
35
50
C
OSS
Common Source Output Capacitance
17
25
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
C
RSS
Reverse Transfer Capacitance
7
8
t
d(ON)
Turn-ON Delay Time
3
5
t
r
Rise Time
5
8
t
d(OFF)
Turn-OFF Delay Time
6
9
t
f
Fall Time
5
8
V
SD
Diode Forward Voltage Drop
1.2
1.8
V
I
SD
= 0.5A, V
GS
= 0V
t
rr
Reverse Recovery Time
400
ns
I
SD
= 0.5A, V
GS
= 0V
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
C unless otherwise specified)
V
DD
= 25V
ns
I
D
= 0.5A
R
GEN
= 25
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Static Drain-to-Source
ON-State Resistance
TN2106
7-73
Typical Performance Curves
Output Characteristics
2.5
2.0
1.5
1.0
0.5
0
V
DS
(volts)
I
(amperes)
D
Saturation Characteristics
V
DS
(volts)
I
(amperes)
D
Maximum Rated Safe Operating Area
0.1
100
10
1
1.0
0.1
0.01
0.001
V
DS
(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1.0
t
p
(seconds)
Transconductance vs. Drain Current
0.5
0.4
0.3
0.2
0.1
0
0
0.4
0.2
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Temperature
0
150
100
50
1.0
0.8
0.6
0.4
0.2
0
125
75
25
T
A
C)
(
D
P
(watts)
TO-236AB
TA = 25
C
PD = 0.36W
TO-92
SOT-23
T
A
= -55
C
V
DS
= 25V
0
10
20
30
50
40
4V
3V
0
2
4
6
10
8
25
C
125
C
0.6
1.0
0.8
10V
8V
6V
2.5
2.0
1.5
1.0
0.5
0
4V
3V
10V
8V
6V
SOT-23 (DC)
SOT-23 (pulsed)
V
GS
=
V
GS
=
T
A
= 25
C
TO-92
TC = 25
C
PD = 1W
TN2106
7-74
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
Tj (
C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
GS(th)
and R
DS(ON)
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
BV
DSS
(normalized)
Tj (
C)
Transfer Characteristics
V
GS
(volts)
I D
(amperes)
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
V
DS
(volts)
ID (amperes)
BV
DSS
Variation with Temperature
0
10
20
30
40
50
75
25
0
0
2
4
6
8
10
1.0
0.8
0.6
0.4
0.2
0
-50
0
50
100
150
1.1
1.0
10
8
6
4
2
0
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
-50
0
50
100
150
38 pF
V
DS
= 20V
V
DS
= 10V
V
GS
= 4.5V
V
GS
= 10V
T
A
= -55
C
V
DS
= 25V
125
C
0
0.5
1.0
1.5
2.5
2.0
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
92 pF
2.0
1.6
1.2
0.8
0.4
0
V
GS(th)
@ 1mA
25
C
0
R
DS(ON)
@ 10V, 0.5A
TN2106
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