1
TN2124
08/30/99
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and
other Supertex products, refer to the Supertex 1998 Databook.
TN2124
Low Threshold
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
BV
DSS
/
R
DS(ON)
V
GS(th)
BV
DGS
(max)
(max)
TO-243AA**
TO-236AB*
240V
15
2.0V
TN2124N8
TN2124K1
* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
** Prodcut supplied on 2000 piece carrier tape reels.
Order Number / Package
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Product marking for SOT-23:
N1C
where
= 2-week alpha date code
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
TO-236AB
(SOT-23)
top view
Gate
Source
Drain
TO-243AA
(SOT-89)
G
D
S
D
2
TN2124
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-236AB
134mA
250mA
0.36W
200
350
134mA
250mA
TO-243AA
230mA
1.1A
1.6W
15
78
230mA
1.1A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board. 25mmx25mmx1.57mm. Significant P
D
increase possible on ceramic substrate.
Thermal Characteristics
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
240
V
I
D
= 1mA, V
GS
= 0V
V
GS(th)
Gate Threshold Voltage
0.8
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-5.5
mV/
C
I
D
= 1mA, V
GS
= V
DS
I
GSS
Gate Body Leakage
0.1
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1
A
V
GS
= 0V, V
DS
= Max Rating
100
A
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
140
mA
V
GS
= 4.5V, V
DS
= 25V
R
DS(ON)
30
V
GS
= 3V, I
D
= 25mA
15
V
GS
= 4.5V, I
D
= 120mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.7
1.0
%/
C
I
D
= 120mA, V
GS
= 4.5V
G
FS
Forward Transconductance
100
170
m
V
DS
= 25V, I
D
= 120mA
C
ISS
Input Capacitance
38
50
C
OSS
Common Source Output Capacitance
9
15
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
C
RSS
Reverse Transfer Capacitance
3
5
t
d(ON)
Turn-ON Delay Time
4
7
t
r
Rise Time
2
5
t
d(OFF)
Turn-OFF Delay Time
7
10
t
f
Fall Time
9
12
V
SD
Diode Forward Voltage Drop
1.8
V
I
SD
= 120mA, V
GS
= 0V
t
rr
Reverse Recovery Time
400
ns
I
SD
= 120mA, V
GS
= 0V
Notes:
1.All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
C unless otherwise specified)
V
DD
= 25V
ns
I
D
= 140mA
R
GEN
= 25
Static Drain-to-Source
ON-State Resistance
3
TN2124
Typical Performance Curves
Output Characteristics
2.0
1.6
1.2
0.8
0.4
0
10
20
30
50
40
V
DS
(volts)
I
(amperes)
D
Saturation Characteristics
1.0
0.8
0.6
0.4
0.2
0
2
4
6
10
8
V
DS
(volts)
I
(amperes)
D
Maximum Rated Safe Operating Area
0
1000
100
10
0.1
1.0
10
0.01
V
DS
(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0
1.0
0.2
0.4
0.6
0.8
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Temperature
T
A
C)
(
D
P
(watts)
SOT-23
TA = 25
C
PD = 0.36W
25
C
-55
C
SOT-23 (pulsed)
2V
0
0
0
3V
SOT-23 (DC)
TA= 25
C
TA= 125
C
VDS= 25V
VGS = 10V
VGS = 10V
6V
8V
4V
3V
2V
4V
6V
8V
0
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
SOT-23
SOT-89
SOT-89 (pulsed)
SOT-89
SOT-89
TA = 25
C
PD = 1.6W
4
TN2124
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
08/30/99
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
T
j
GS(th)
V
(normalized)
DS(ON)
R
(normalized)
V
TH
and R
DS
Variation with Temperature
C)
(
On-Resistance vs. Drain Current
(amperes)
D
(ohms)
DS(ON)
R
BV
DSS
Variation with Temperature
DSS
BV
(normalized)
C)
(
T
j
Transfer Characteristics
V
GS
(volts)
I
(amperes)
D
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
V
DS
(volts)
I
0
10
20
30
40
50
75
25
0
0
2
4
6
8
10
1.0
0.8
0.6
0.4
0.2
0
-50
0
50
100
150
1.1
1.0
50
40
30
20
10
0
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
-50
0
50
100
150
32 pF
V
DS
= 40V
V
DS
= 10V
100pF
V
GS
= 4.5V
V
GS
= 3V
125
C
0
0.2
0.4
0.6
1.0
0.8
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
2.0
1.6
1.2
0.8
0.4
0
V
GS(th)
@ 1mA
25
C
T
A
= -55
C
V
DS
= 25V
0
R
DS(ON)
@ 4.5V, 120mA
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