1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TN2435
Features
High input impedance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Option
N-Channel Enhancement-Mode
Vertical DMOS FETs
Applications
Logic level interfaces
Solid state relays
Power Management
Analog switches
Ringers
Telecom switches
Note: See Package Outline section for dimensions.
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
** Die in wafer form.
Order Number / Package
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-243AA*
Die**
350V
6.0
1.0A
TN2435N8
TN2435NW
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Low Threshold
Product marking for TO-243AA:
TN4D
where
= 2-week alpha date code
TO-243AA
(SOT-89)
G
D
S
D
2
TN2435
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
350
V
V
GS
= 0V, I
D
= 250
A
V
GS(th)
Gate Threshold Voltage
0.8
V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS(th)
Change in V
GS(th)
with Temperature
-5.5
mV/
C
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
1.0
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.5
A
V
GS
= 4.5V, V
DS
= 25V
1.0
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
Static Drain-to Source ON-State
15.0
V
GS
= 3.0V, I
D
= 150mA
Resistance
10.0
V
GS
= 4.5V, I
D
= 250mA
6.0
V
GS
= 10V, I
D
= 750mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.7
%/
C
V
GS
= 10V, I
D
= 750mA
G
FS
Forward Transconductance
125
m
V
DS
= 25V, I
D
= 350mA
C
ISS
Input Capacitance
125
200
V
GS
= 0V, V
DS
= 25V
C
OSS
Common Source Output Capacitance
25
70
pF
f = 1.0MHz
C
RSS
Reverse Transfer Capacitance
8
25
t
d(ON)
Turn-ON Delay Time
5
20
t
r
Rise Time
10
20
ns
t
d(OFF)
Turn-OFF Delay Time
28
40
t
f
Fall Time
10
30
V
SD
Diode Forward Voltage Drop
1.5
V
V
GS
= 0V, I
SD
= 750mA
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= 750mA
Notes:
1.All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
C unless otherwise specified)
V
DD
= 25V,
I
D
= 750mA
R
GEN
= 25
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-243AA
365mA
1.8A
1.6W
15
78
365mA
1.8A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
3
TN2435
Typical Performance Curves
0.0
0.5
1.0
1.5
2.0
0.0
0.2
0.4
0.6
0.8
1.0
VDS=15V
TA=125
C
TA=25
C
TA=-55
C
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
I D
(Amperes)
VDS (Volts)
VGS = 10V
Output Characteristics
6V
5V
4V
3V
2.5V
Saturation Characteristics
I D
(Amperes)
VDS (Volts)
VGS = 10V
8V
6V
4V
3V
2.5V
G
FS
(siemens)
ID (Amperes)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
PD
(W
atts)
TC (
C)
Maximum Rated Safe Operating Area
I D
(amperes)
VDS (Volts)
Thermal Response Characteristics
Ther
mal Resistance (nor
maliz
ed)
tp (seconds)
8V
5V
1
1000
100
10
10
1.0
0.1
0.01
0.001
TO-243AA (DC)
TO-243AA (pulsed)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1.0
TO-243AA
P
D
= 1.6W
T
C
= 25
C
0
0
10
20
30
40
50
0
1.0
2.0
3.0
2.5
1.5
0.5
0
2
4
6
8
10
0.0
0.4
0.8
1.2
1.6
2.0
TO-243AA
TA=25
C
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
TN2435
Typical Performance Curves
R
DS(ON)
(ohms)
ID (Amperes)
On Resistance vs. Drain Current
VGS(TH) and RDS(ON) w/ Temperature
V
GS(th)
(nor
maliz
ed)
TJ (
C)
R
DS(ON)
(nor
maliz
ed)
Transfer Characteristics
I D
(Amperes)
VGS (Volts)
-50
0
50
100
150
0.8
0.9
1.0
1.1
1.2
BV @ 250
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
0
2
4
6
8
10
0.0
0.4
0.8
1.2
1.6
2.0
TA = -55
C
TA = 150
C
TA = 25
C
VDS = 25V
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
0.4
0.8
1.2
1.6
2.0
2.4
RDS(ON) @ 10V, 0.75A
VGS(th) @ 1mA
0
10
20
30
40
50
0
75
150
225
300
CRSS
COSS
CISS
f = 1MHz
0.0
1.0
2.0
3.0
4.0
5.0
0
2
4
6
8
10
VDS=10V
VDS=40V
ID = 365mA
BV
DSS
(Nor
maliz
ed)
TJ (
C)
BV
DSS
Variation with Temperature
Capacitance vs. Drain Source Voltage
C
(picof
ar
ads)
VDS (Volts)
525pF
150pF
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
VGS =
4.5V
VGS = 10V
VGS = 3V
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