1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
BV
DSS
/
R
DS(ON)
I
D(ON)
V
GS(th)
BV
DGS
(max)
(min)
(max)
TO-243AA*
Die
18V
2.5
250mA
1.0V
TN2501N8
TN2501ND
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Low threshold
High input impedance
Low input capacitance -- 110pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
15V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Ordering Information
Package Option
Order Number /Package
Note: See Package Outline section for dimensions.
TN2501
TO-243AA
(SOT-89)
G
D
S
D
Product marking for TO-243AA:
Where
= 2-week alpha date code
TN5U
2
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-243AA
400mA
560mA
1.6W
15
78
560mA
750mA
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
18
V
V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
0.3
1.0
V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.0
mV/
C
V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
15V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
1.0
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
250
600
mA
V
GS
= V
DS
= 3.0V
R
DS(ON)
25
V
GS
= 1.2V, I
D
= 3.0mA
3.5
V
GS
= 2.0V, I
D
= 50mA
2.5
V
GS
= 3.0V, I
D
= 200mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.75
%/
C
V
GS
= 3.0V, I
D
= 200mA
G
FS
Forward Transconductance
0.15
0.3
V
DS
= 3.0V, I
D
= 200mA
C
ISS
Input Capacitance
110
C
OSS
Common Source Output Capacitance
60
pF
C
RSS
Reverse Transfer Capacitance
35
t
d(ON)
Turn-ON Delay Time
5.0
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
15
t
f
Fall Time
8.0
V
SD
Diode Forward Voltage Drop
1.1
1.8
V
V
GS
= 0V, I
SD
= 200mA
t
rr
Reverse Recovery Time
100
ns
V
GS
= 0V, I
SD
= 200mA
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
sec pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
DD
= 15V,
I
D
= 250mA,
R
GEN
= 25
V
GS
= 0V, V
DS
= 15V
f = 1 MHz
ns
TN2501
3
Output Characteristics
5
4
3
2
1
0
0
10
20
V
DS
(volts)
V
DS
(volts)
Saturation Characteristics
1.0
0.8
0.6
0.4
0.2
0
2
4
6
10
8
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
I
D
(amperes)
Maximum Rated Safe Operating Area
0.1
100
10
1.0
0.1
1.0
10
0.01
Thermal Response Characteristics
Thermal
Resistance
(normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.5
0
0
0.2
0.4
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Ambient Temperature
0
150
100
50
2.0
1.0
0
125
75
25
T
A
(C)
P
D
(watts)
TO-243AA(pulsed)
1V
VGS = 4V
0
8V
6V
4V
0
3V
VGS = 10V
TO-243AA (DC)
TO-243AA
0.6
1.0
0.8
2V
3V
V
DS
VDS = 3V
T
A
= 25C
TO-243AA
TA = 25C
PD = 1.6W
T
A
= -55C
25C
125C
Typical Performance Curves
TN2501
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. I
D
(ohms)
DS(ON)
R
BV
DSS
(normalized)
T
j
(
C)
T
j
(
C)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
V
DS
(volts)
I
D
(amperes)
BV
DSS
Variation with Temperature
0
5
10
15
20
75
50
0
0
2
4
6
8
10
-50
0
50
100
150
1.1
1.0
10
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
60pF
V
DS
= 15V
V
DS
= 10V
V
GS
= 2V
V
GS
= 3V
0
0.2
0.4
0.6
1.0
0.8
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
130 pF
1.6
1.4
1.2
1.0
0.8
0.6
V
(th)
@ 1mA
R
DS(ON)
@ 3V, 0.2A
25
0
1.0
0.8
0.6
0.4
0.2
0
T
A
= -55
C
V
DS
= 15V
25
C
125
C
Typical Performance Curves
TN2501
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