1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Features
Low threshold -- 2.0V max.
High input impedance
Low input capacitance -- 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis-
tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
TN2524
Low Threshold
Package Option
N-Channel Enhancement-Mode
Vertical DMOS FETs
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
TO-243AA
(SOT-89)
G
D
S
D
Order Number / Package
BV
DSS
/
R
DS(ON)
V
GS(th)
I
D(ON)
BV
DGS
(max)
(max)
(min)
TO-243AA*
Die
240V
6.0
2.0V
1.0A
TN2524N8
TN2524ND
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
Ordering Information
Product marking for TO-243AA
Where
= 2-week alpha date code
TN5C
2
TN2524
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
240
V
V
GS
= 0V, I
D
= 2mA
V
GS(th)
Gate Threshold Voltage
0.6
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-5.0
mV/
C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
10
A
V
GS
= 0V, V
DS
= Max Rating
1.0
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.5
1.9
V
GS
= 4.5V, V
DS
= 25V
1.0
2.8
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
4.0
6.0
V
GS
= 4.5V, I
D
= 250mA
4.0
6.0
V
GS
= 10V, I
D
= 0.5A
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.4
%/
C
V
GS
= 10V, I
D
= 0.5A
G
FS
Forward Transconductance
300
600
m
V
DS
= 25V, I
D
= 0.5A
C
ISS
Input Capacitance
65
125
C
OSS
Common Source Output Capacitance
35
70
pF
C
RSS
Reverse Transfer Capacitance
10
25
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
10
t
d(OFF)
Turn-OFF Delay Time
20
t
f
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= 0V, I
SD
= 1.0A
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= 1.0A
Notes:
1.All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
A
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-243AA
0.36A
2.0A
1.6W
15
78
0.36A
2.0A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25
C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
V
DD
= 25V,
ns
I
D
= 1.0A,
R
GEN
= 25
3
TN2524
Typical Performance Curves
Output Characteristics
4.0
3.2
2.4
1.6
0.8
0
V
DS
(volts)
I
(amperes)
D
SaturationCharacteristics
2.5
2.0
1.5
1.0
0.5
0
V
DS
(volts)
I
(amperes)
D
Maximum Rated Safe Operating Area
1
1000
100
10
0.1
1.0
10
0.01
V
DS
(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal
Resistance
(normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0
4.0
0.8
1.6
2.4
3.2
G
FS
(siemens)
I
D
(amperes)
Power Dissipationvs. AmbientTemperature
0
150
100
50
2.0
0
125
75
25
T
C
C)
(
D
P
(watts)
TO-243AA
T
A
= -55C
V
DS
= 25V
TO-243AA (pulsed)
0
10
20
30
50
40
V
GS
= 10V
8V
6V
4V
2V
0
2
4
6
10
8
V
GS
= 10V
T
A
= 25C
T
A
= 150C
TO-243AA (DC)
1.0
2V
6V
4V
3V
3V
8V
TO-243AA
P
T
D
C
= 0.55W
= 25 C
0
T
A
= 25C
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
TN2524
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
T
j
GS(th)
V
(normalized)
DS(ON)
R
(normalized)
V
DS
(th)
and R
Variation with Temperature
C)
(
On-Resistance vs. Drain Current
(amperes)
D
(ohms)
DS(ON)
R
Variation with Temperature
DSS
DSS
BV
(normalized)
C)
(
T
j
Transfer Characteristics
V
GS
(volts)
I
(amperes)
D
Capacitance vs. Drain-to-Source Voltage
200
C (picofarads)
V
DS
(volts)
I
BV
0
10
20
30
40
150
100
0
0
2
4
6
8
10
3.0
2.5
2.0
1.5
1.0
0.5
0
-50
0
50
100
150
1.1
1.0
10
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
63pF
V
DS
= 40V
V
DS
= 10V
V
GS
= 4.5V
V
GS
= 10V
T
= -55
C
A
V
DS
= 25V
150
C
0
1
2
3
5
4
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
150 pF
2.4
2.0
1.6
1.2
0.8
0.4
(th)
V @ 1mA
R
DS(ON)
@ 10V, 0.5A
25
C
50
0
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