1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TN2535
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Low threshold
High input impedance
Low input capacitance -- 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Ordering Information
BV
DSS
/
R
DS(ON)
V
GS(th)
I
D(ON)
BV
DGS
(max)
(max)
(min)
TO-243AA*
350V
10
2.0V
1.0A
TN2535N8
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Order Number / Package
New Product
Low Threshold
Package Option
Note: See Package Outline section for dimensions.
TO-243AA
(SOT-89)
G
D
S
D
Product marking for TO-243AA
Where
= 2-week alpha date code
TN5S
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Thermal Characteristics
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-243AA
283mA
1.6A
1.6W
15
78
283mA
1.6A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
350
V
V
GS
= 0V, I
D
= 250
A
V
GS(th)
Gate Threshold Voltage
1.0
2.0
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-4.0
mV/
C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1.0
A
V
GS
= 0V, V
DS
= Max Rating
I
D(ON)
ON-State Drain Current
0.5
A
V
GS
= 4.5V, V
DS
= 25V
1.0
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
Static Drain-to-Source
15
V
GS
= 3.0V, I
D
= 20mA
ON-State Resistance
10
V
GS
= 4.5V, I
D
= 100mA
10
V
GS
= 10V, I
D
= 200mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.75
%/
C
V
GS
= 10V, I
D
= 200mA
G
FS
Forward Transconductance
125
m
V
DS
= 25V, I
D
= 100mA
C
ISS
Input Capacitance
125
C
OSS
Common Source Output Capacitance
70
pF
C
RSS
Reverse Transfer Capacitance
25
t
d(ON)
Turn-ON Delay Time
20
V
DD
= 25V,
t
r
Rise Time
15
ns
I
D
= 200mA,
t
d(OFF)
Turn-OFF Delay Time
25
R
GEN
= 25
t
f
Fall Time
20
V
SD
Diode Forward Voltage Drop
1.8
V
V
GS
= 0V, I
SD
= 200mA
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= 200mA
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
C unless otherwise specified)
TN2535
3
Typical Performance Curves
I D
(Amperes)
VDS (Volts)
Output Characteristics
Saturation Characteristics
I D
(Amperes)
VDS (Volts)
G
FS
(Siemens)
ID (Amperes)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
PD
(W
atts)
TA (C)
Maximum Rated Safe Operating Area
I D
(Amperes)
VDS (Volts)
Thermal Response Characteristics
Thermal
Resistance
(normalized)
tp (seconds)
1
1000
100
10
TO-243AA (Pulsed)
TA=25C
0.01
0.1
1.0
10
TO-243AA (DC)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1
TO-243AA
T
A
= 25C
P
D
= 1.6W
V
GS
= 10V
0
10
20
30
40
50
0.0
0.4
0.8
1.2
1.6
2.0
V
GS
=3V
V
GS
=4V
V
GS
=5V
V
GS
=6V
V
GS
=8V
V
GS
=10V
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
= 3.0V
V
GS
= 4.0V
5.0V
6.0V
8.0V
0.0
0.4
0.8
1.2
1.6
0.0
0.2
0.4
0.6
0.8
VDS=15V
TA=-55C
TA=25C
TA=125C
0
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
TO-243AA
TN2535
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
TN2535
Typical Performance Curves
R
DS(ON)
(ohms)
ID (Amperes)
On Resistance vs. Drain Current
VGS(th) and RDS(ON) w/ Temperature
V
GS(th)
(normalized)
TJ (
C)
R
DS(ON)
(normalized)
Transfer Characteristics
I D
(Amperes)
VGS (Volts)
-50
0
50
100
150
0.8
0.9
1.0
1.1
1.2
BV @ 250A
BV
DSS
(normalized)
TJ (
C)
BV
DSS
Variation with Temperature
Capacitance vs. Drain Source Voltage
C
(picofarads)
VDS (Volts)
0.0
0.4
0.8
1.2
1.6
2.0
0
4
8
12
16
20
VGS = 4.5V
VGS = 10V
VGS = 3V
0
2
4
6
8
10
0.0
0.4
0.8
1.2
1.6
2.0
VDS = 15V
TA = -55C
TA = 125C
TA = 25C
-50
0
50
100
150
0.7
0.8
0.9
1.0
1.1
1.2
0.4
0.8
1.2
1.6
2.0
2.4
VGS(th) @ 1mA
RDS(ON) @ 10V, 0.2A
0
10
20
30
40
0
50
100
150
200
CRSS
COSS
CISS
f = 1MHz
0.0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
VDS=10V
VDS=40V
295pF
92pF
ID = 283mA
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
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