1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TP0610T
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Note: See Package Outline section for dimensions.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Option
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
BV
DSS
/
R
DS(ON)
I
D(ON)
Order Number/Package
BV
DGS
(max)
(min)
TO-236AB*
-60V
10
-50mA
TP0610T
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Gate
Source
Drain
TO-236AB
(SOT-23)
top view
Product marking for SOT-23:
T50
where
= 2-week alpha date code
Ordering Information
2
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
TP0610T
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
SOT-23
-120mA
-400mA
0.36W
200
350
-120mA
-400mA
*
I
D
(continuous) is limited by max rated T
j
.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-60
V
V
GS
= 0V, I
D
= -10
A
V
GS(th)
Gate Threshold Voltage
-1.0
-2.4
V
V
GS
= V
DS
, I
D
= -1.0mA
V
GS(th)
Change in V
GS(th)
with Temperature
6.5
mV/
C
V
GS
= V
DS,
I
D
= -1.0mA
I
GSS
Gate Body Leakage
10
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
-1
A
V
GS
= 0V, V
DS
= Max Rating
-200
A
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
-50
mA
V
GS
= -4.5V, V
DS
= -10V
R
DS(ON)
25
V
GS
= -4.5V, I
D
= -25mA
10
V
GS
= -10V, I
D
= -0.2A
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.0
%/
C
V
GS
= -10V, I
D
= -0.2A
G
FS
Forward Transconductance
60
m
V
DS
= -10V, I
D
= -0.1A
C
ISS
Input Capacitance
60
C
OSS
Common Source Output Capacitance
30
pF
C
RSS
Reverse Transfer Capacitance
10
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
15
t
f
Fall Time
20
V
SD
Diode Forward Voltage Drop
-2.0
V
V
GS
= 0V, I
SD
= -0.12A
t
rr
Reverse Recovery Time
400
ns
V
GS
= 0V, I
SD
= -0.4A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Electrical Characteristics
(@ 25
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
DD
= -25V
ns
I
D
= -0.18A
R
GEN
= 25
Switching Waveforms and Test Circuit
3
Output Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
Saturation Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
Maximum Rated Safe Operating Area
-0.1
-100
-10
-1.0
-0.01
-0.1
-1.0
-0.001
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1.0
Transconductance vs. Drain Current
Power Dissipation vs. Temperature
0
150
100
50
0.5
0.4
0.3
0.2
0.1
0
125
75
25
SOT-23
SOT-23 (DC)
0
-10
-20
-30
-50
-40
0
-2
-4
-6
-10
-8
SOT-23 (pulsed)
T
A
= 25
C
0.5
0.4
0.3
0.2
0.1
0
0
-0.2
-0.4
-0.6
-1.0
-0.8
-6V
-4V
-3V
-8V
-6V
-3V
-4V
-8V
T
A
= -55
C
25
C
125
C
SOT-23
T
A
= 25
C
P
D
= 0.36W
V
DS
(volts)
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
V
GS
= -10V
V
GS
= -10V
G
FS
(siemens)
I
D
(amperes)
T
A
(
C)
P
D
(watts)
V
DS
(volts)
I
D
(amperes)
t
p
(seconds)
Typical Performance Curves
TP0610T
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Gate Drive Dynamic Characteristics
GS
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
0
-10
-20
-30
-40
50
75
25
0
0
-2
-4
-6
-8
-10
-2.0
-1.6
-1.2
-0.8
-0.4
0
-50
0
50
100
150
1.1
1.0
20
16
12
8
4
0
1.2
1.1
1.0
0.9
0.8
0.7
-10
-8
-6
-4
-2
0
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
35 pF
T
= -55
C
A
25
C
0
-0.4
-0.8
-1.2
-2.0
-1.6
f = 1MHz
0.9
1.6
1.4
1.2
1.0
0.8
125
C
0
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(
C)
I
D
(amperes)
BV
DSS
Variation with Temperature
V
GS
= -4.5V
V
GS
= -10V
T
j
(
C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
GS(th)
and R
DS(ON)
Variation with Temperature
V
GS
(volts)
I
D
(amperes)
V
DS
= -25V
V
GS(th)
@ -1mA
R
DS(ON)
@ -10V,
-0.5A
C
ISS
C
OSS
C
RSS
Q
G
(nanocoulombs)
V
GS
(volts)
V
DS
(volts)
V
DS
= -10V
V
DS
= -40V
125 pF
TP0610T
Typical Performance Curves
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