1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
BV
DSS
/
R
DS(ON)
V
GS(th)
I
D(ON)
BV
DGS
(max)
(max)
(min)
TO-243AA*
Die
-100V
3.5
-2.4V
-1.5A
TP2510N8
TP2510ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
Ordering Information
Order Number / Package
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) tran-
sistors utilize a vertical DMOS structure and Supertex's well-
proven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very low
threshold voltage, high breakdown voltage, high input imped-
ance, low input capacitance, and fast switching speeds are de-
sired.
TP2510
Low Threshold
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Option
Features
Low threshold -- -2.4V max.
High input impedance
Low input capacitance -- 125pF max.
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
G
D
S
TO-243AA
(SOT-89)
D
Product marking for TO-243AA
Where
= 2-week alpha date code
TP5A
2
TP2510
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
A
= 25
C
C/W
C/W
TO-243AA
-480mA
-2.5A
1.6W
15
78
-480mA
-2.5A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
-100
V
V
GS
= 0V, I
D
= -2.0mA
V
GS(th)
Gate Threshold Voltage
-1.0
-2.4
V
V
GS
= V
DS
, I
D
= -1.0mA
V
GS(th)
Change in V
GS(th)
with Temperature
5.0
mV/
C
V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate Body Leakage
-100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
-10
A
V
GS
= 0V, V
DS
= Max Rating
-1.0
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
-0.4
-0.6
V
GS
= -5.0V, V
DS
= -25V
-1.5
-2.5
V
GS
= -10V, V
DS
= -25V
R
DS(ON)
5.0
7.0
V
GS
= -5.0V, I
D
= -250mA
2.0
3.5
V
GS
= -10V, I
D
= -0.75A
R
DS(ON)
Change in R
DS(ON)
with Temperature
1.7
%/
C
V
GS
= -10V, I
D
= -0.75A
G
FS
Forward Transconductance
300
360
m
V
DS
= -25V, I
D
= -0.75A
C
ISS
Input Capacitance
80
125
C
OSS
Common Source Output Capacitance
40
70
pF
C
RSS
Reverse Transfer Capacitance
10
25
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
20
t
f
Fall Time
15
V
SD
Diode Forward Voltage Drop
-1.8
V
V
GS
= 0V, I
SD
= -1.0A
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= -1.0A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Electrical Characteristics
(@ 25
C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
DD
= -25V,
ns
I
D
= -1.0A,
R
GEN
= 25
V
GS
= 0V, V
DS
= -25V
f = 1.0 MHz
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
3
TP2510
Output Characteristics
-5
-4
-3
-2
-1
0
0
-10
-20
-30
-50
-40
Saturation Characteristics
-5
-4
-3
-2
-1
0
0
-2
-4
-6
-10
-8
Maximum Rated Safe Operating Area
-0.1
-100
-10
-1.0
-10
-1.0
-0.1
-0.01
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
t
p
(seconds)
Transconductance vs. Drain Current
0.5
0.4
0.3
0.2
0.1
0
0
-2.5
-0.5
-1.0
-1.5
-2.0
Power Dissipation vs. Ambient Temperature
0
150
100
50
2.0
1.0
0
125
75
25
TO-243AA(pulsed)
V
GS
= -10V
-6V
-4V
0
TO-243AA (DC)
-3V
TO-243AA
-8V
-3V
-4V
-8V
-6V
V
DS
= -25V
T
A
= -55
C
T
A
= 25
C
T
A
= 125
C
T
A
= 25
C
TO-243AA
T
A
= 25
C
P
D
= 1.6W
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
V
DS
(volts)
V
GS
= -10V
G
FS
(siemens)
I
D
(amperes)
T
A
(
C)
P
D
(watts)
V
DS
(volts)
I
D
(amperes)
Typical Performance Curves
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
TP2510
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
200
C (picofarads)
0
-10
-20
-30
-40
100
0
-2
-4
-6
-8
-10
-5
-4
-3
-2
-1
0
0
-50
0
50
100
150
1.1
1.0
0.9
10
8
6
4
2
0
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.6
1.2
0.8
0.4
0
-10
-8
-6
-4
-2
0
0
1.0
2.0
-50
0
50
100
150
V
DS
= -40V
V
DS
= -10V
V
GS
= -5V
V
GS
= -10V
T
A
= -55
C
0
-0.8
-1.6
-2.4
-4.0
-3.2
f = 1MHz
71 pF
R
DS (ON)
@ -10V, -0.75A
150
50
0
142 pF
150
C
25
C
R
DS(ON)
(ohms)
BV
DSS
(normalized)
T
j
(
C)
I
D
(amperes)
BV
DSS
Variation with Temperature
T
j
(
C)
V
GS(th)
(normalized)
R
DS(ON)
(normalized)
V
(th)
and R
DS
Variation with Temperature
V
GS
(volts)
I
D
(amperes)
V
DS
= -25V
V
(th)
@
-1mA
Q
G
(nanocoulombs)
V
GS
(volts)
V
DS
(volts)
C
ISS
C
OSS
C
RSS
Typical Performance Curves
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