1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
P-Channel Enhancement-Mode
Vertical DMOS FETs
TP2635
TP2640
Ordering Information
BV
DSS
/
R
DS(ON)
V
GS(th)
I
D(ON)
BV
DGS
(max)
(max)
(min)
SO-8
TO-92
Die
-350V
15
-2.0V
-0.7A
TP2635N3
--
-400V
15
-2.0V
-0.7A
TP2640LG
TP2640N3
TP2640ND
MIL visual screening available.
Order Number / Package
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Features
Low threshold -- -2.0V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
Package Options
S G D
Note: See Package Outline section for dimensions.
TO-92
1
2
3
4
8
7
6
5
SO-8
top view
NC
D
NC
D
S
D
G
D
Low Threshold
2
TP2635/TP2640
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
SO-8
-210mA
-1.25A
1.3W
24
96
-210mA
-1.25A
TO-92
-180mA
-0.8A
1.0W
125
170
-180mA
-0.8A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Thermal Characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
TP2640
-400
V
V
GS
= 0V, I
D
= -2.0mA
TP2635
-350
V
GS(th)
Gate Threshold Voltage
-0.8
-2.0
V
V
GS
= V
DS
, I
D
= -1.0mA
V
GS(th)
Change in V
GS(th)
with Temperature
5.0
mV/
C
V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate Body Leakage
-100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
-1
A
V
GS
= 0V, V
DS
= -100V
-10
A
V
GS
= 0V, V
DS
= Max Rating
-1
mA
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.7
V
GS
= -10V, V
DS
= -25V
R
DS(ON)
12
15
V
GS
= -2.5V, I
D
= -20mA
11
15
V
GS
= -4.5V, I
D
= -150mA
11
15
V
GS
= -10V, I
D
= -300mA
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.75
%/
C
V
GS
= -10V, I
D
= -300mA
G
FS
Forward Transconductance
200
m
V
DS
= -25V, I
D
= -300mA
C
ISS
Input Capacitance
300
C
OSS
Common Source Output Capacitance
50
pF
C
RSS
Reverse Transfer Capacitance
12
t
d(ON)
Turn-ON Delay Time
10
t
r
Rise Time
15
t
d(OFF)
Turn-OFF Delay Time
60
t
f
Fall Time
40
V
SD
Diode Forward Voltage Drop
-1.8
V
V
GS
= 0V, I
SD
= -200mA
t
rr
Reverse Recovery Time
300
ns
V
GS
= 0V, I
SD
= -200mA
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Electrical Characteristics
(@ 25
C unless otherwise specified)
Drain-to-Source
Breakdown Voltage
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
DD
= -25V,
I
D
= -300mA,
R
GEN
= 25
ns
Static Drain-to-Source
ON-State Resistance
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
3
TP2635/TP2640
Typical Performance Curves
Output Characteristics
-2.0
-1.6
-1.2
-0.8
-0.4
0
V
DS
(volts)
I
(amperes)
D
Saturation Characteristics
V
DS
(volts)
I
(amperes)
D
Maximum Rated Safe Operating Area
-1
-1000
-100
-10
-10
-1.0
-0.1
-0.01
-0.001
V
DS
(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0
0.001
10
0.01
0.1
1.0
t
p
(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0
-0.8
-0.4
G
FS
(siemens)
I
D
(amperes)
Power Dissipation vs. Temperature
0
150
100
50
2.0
1.6
1.2
0.8
0.4
0
125
75
25
T
C
C)
(
D
P
(watts)
TO-92
TC = 25
C
PD = 1.0W
SO-8
TO-92
T
A
= -55
C
V
DS
= -25V
0
-10
-20
-30
-50
-40
0
-2
-4
-6
-10
-8
25
C
125
C
-1.2
-2.0
-1.6
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
GS
= -10V
-3V
-4V
-6V
-8V
V
GS
= -10V
-8V
-6V
-3V
-4V
SO-8 (pulsed)
T
C
= 25
C
TO-92 (DC)
TO-92 (pulsed)
SO-8
(DC)
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
TP2635/TP2640
Typical Curves
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
T
j
GS(th)
V
(normalized)
DS(ON)
R
(normalized)
V
TH
and R
DS
Variation with Temperature
C)
(
On-Resistance vs. Drain Current
(amperes)
D
(ohms)
DS(ON)
R
Variation with Temperature
DSS
DSS
BV
(normalized)
C)
(
T
j
Transfer Characteristics
V
GS
(volts)
I
(amperes)
D
Capacitance vs. Drain-to-Source Voltage
400
C (picofarads)
V
DS
(volts)
I
BV
0
-10
-20
-30
-40
200
300
100
0
0
-2
-4
-6
-8
-10
-2.0
-1.6
-1.2
-0.8
-0.4
0
-50
0
50
100
150
1.1
1.0
30
24
18
12
6
0
1.2
1.0
0.8
0.6
0.4
-10
-8
-6
-4
-2
0
1
2
3
4
5
-50
0
50
100
150
263pF
V
DS
= -10V
V
DS
= -40V
678pF
V
GS
= -4.5V
V
GS
= -10V
V
GS
= -2.5V
+125
C
0
-0.4
-0.8
-1.2
-2.0
-1.6
f = 1MHz
C
ISS
C
OSS
C
RSS
0.9
2.5
2.0
1.5
1.0
0.5
0
R
DS(ON)
@ -10V, -0.3A
25
C
T
A
= -55
C
V
DS
= -25V
0
V
(th)
@ -1mA
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