1
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN0104
VN0106
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FET
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
TO-92
S G D
Order Number / Package
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
TO-92
40V
3.0
2.0A
VN0104N3
60V
3.0
2.0A
VN0106N3
Ordering Information
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55
C to +150
C
Soldering Temperature*
300
C
*
Distance of 1.6 mm from case for 10 seconds.
2
VN0104/VN0106
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
jc
ja
I
DR
*
I
DRM
@ T
C
= 25
C
C/W
C/W
TO-92
350mA
2.0A
1.0W
125
170
350mA
2.0A
* I
D
(continuous) is limited by max rated T
j
.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
VN0106
60
VN0104
40
V
GS(th)
Gate Threshold Voltage
0.8
2.4
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-3.8
-5.5
mV/
C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
=
20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1
V
GS
= 0V, V
DS
= Max Rating
100
A
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
C
I
D(ON)
ON-State Drain Current
0.5
1.0
V
GS
= 5V, V
DS
= 25V
2.0
2.5
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
3.0
5.0
V
GS
= 5V, I
D
= 250mA
2.5
3.0
V
GS
= 10V, I
D
= 1A
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.70
1
%/
C
V
GS
= 10V, I
D
= 1A
G
FS
Forward Transconductance
300
450
m
V
DS
= 25V, I
D
= 0.5A
C
ISS
Input Capacitance
55
65
C
OSS
Common Source Output Capacitance
20
25
pF
C
RSS
Reverse Transfer Capacitance
5
8
t
d(ON)
Turn-ON Delay Time
3
5
t
r
Rise Time
5
8
t
d(OFF)
Turn-OFF Delay Time
6
9
t
f
Fall Time
5
8
V
SD
Diode Forward Voltage Drop
1.2
1.8
V
V
GS
= 0V, I
SD
=1.0A
t
rr
Reverse Recovery Time
400
ns
V
GS
= 0V, I
SD
=1.0A
Notes:
1. All D.C. parameters 100% tested at 25
C unless otherwise stated. (Pulse test: 300
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Static Drain-to-Source
ON-State Resistance
V
V
GS
= 0V, I
D
= 1mA
Drain-to-Source
Breakdown Voltage
Electrical Characteristics
(@ 25
C unless otherwise specified)
V
DD
= 25V
I
D
= 1A
R
GEN
= 25
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
3
VN0104/VN0106
Typical Performance Curves
Output Characteristics
2.5
2.0
1.5
1.0
0.5
0
10
20
30
50
40
Saturation Characteristics
0
2
4
6
10
8
Maximum Rated Safe OperatingArea
0.1
100
10
1.0
0.1
1.0
10
0.01
I
D
(amperes)
Thermal Response Characteristics
Thermal
Resistance
(normalized)
1.0
0.8
0.6
0.4
0.2
0.001
10
0.01
0.1
1
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
0
1.0
0.2
0.4
0.6
0.8
G
FS
(siemens)
Power Dissipation vs. Case Temperature
0
150
100
50
2.0
1.0
125
75
25
P
D
(watts)
TO-92
T
A
= -55C
V
GS
= 10V
8V
6V
4V
0
0
0
8V
6V
4V
2.5
2.0
1.5
1.0
0.5
0
TO-92 (DC)
TC = 25C
VGS =10V
V
DS
(volts)
I
D
(amperes)
V
DS
= 25V
25C
125C
I
D
(amperes)
V
DS
(volts)
t
p
(seconds)
T
C
(C)
V
DS
(volts)
I
D
(amperes)
TO-92
P
D
= 1W
T
C
= 25C
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
VN0104/VN0106
Typical Performance Curves
C
Gate Drive Dynamic Characteristics
Q
G
(nanocoulombs)
V
GS
(volts)
T
j
(
C)
V
GS(th)
(normalized)
DS(ON)
R
(normalized)
V
(th)
and R
DS
Variation with Temperature
On-Resistance vs. Drain Current
R
DS(ON)
(ohms)
Transfer Characteristics
V
GS
(volts)
I
D
(amperes)
Capacitance vs. Drain-to-Source Voltage
100
C (picofarads)
V
DS
(volts)
I
D
(amperes)
0
10
20
30
40
75
50
25
0
2
4
6
8
10
2.5
2.0
1.5
1.0
0.5
-50
0
50
100
150
1.1
1.0
0.9
0
0
2.5
1.0
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
-50
0
50
100
150
V
DS
= 10V
V
(th)
@ 1mA
R
DS
@ 10V, 1.0A
0.5
1.5
2.0
1.0
2.0
3.0
5.0
4.0
0
0
40 pF
40V
80 pF
0
1.9
1.6
1.3
1.0
0.7
0.4
f = 1MHz
R
DS
@ 5V, 0.25A
BV
DSS
Variation with Temperature
BV
DSS
(normalized)
T
j
(
C)
V
DS
= 25V
T
A
= -55
C
25
C
125
C
C
ISS
C
OSS
C
RSS
V
GS
= 5V
V
GS
= 10V
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