03/26/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
t
Motor controls
t
Converters
t
Amplifiers
t
Switches
t
Power supply circuits
t
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Features
t
Free from secondary breakdown
t
Low power drive requirement
t
Ease of paralleling
t
Low C
ISS
and fast switching speeds
t
Excellent thermal stability
t
Integral Source-Drain diode
t
High input impedance and high gain
t
Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
Drain-to-Gate Voltage
BV
DGS
Gate-to-Source Voltage
20V
Operating and Storage Temperature
-55C to +150C
Soldering Temperature*
300C
*
Distance of 1.6 mm from case for 10 seconds.
VN1506
VN1509
Order Number / Package
BV
DSS
/
R
DS(ON)
I
D(ON)
BV
DGS
(max)
(min)
Die
60V
3.0
2.0A
VN01506NW
90V
3.0
2.0A
VN1509NW
MIL visual screening available.
Ordering Information
N-Channel Enhancement-Mode
Vertical DMOS FET
VN1506/VN1509
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
VN1509
90
VN1506
60
V
GS(th)
Gate Threshold Voltage
0.8
2.4
V
V
GS
= V
DS
, I
D
= 1mA
V
GS(th)
Change in V
GS(th)
with Temperature
-3.8
-5.5
mV/C
V
GS
= V
DS
, I
D
= 1mA
I
GSS
Gate Body Leakage
100
nA
V
GS
= 20V, V
DS
= 0V
I
DSS
Zero Gate Voltage Drain Current
1
V
GS
= 0V, V
DS
= Max Rating
100
A
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125C
I
D(ON)
ON-State Drain Current
0.5
1.0
V
GS
= 5V, V
DS
= 25V
2.0
2.5
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
3.0
5.0
V
GS
= 5V, I
D
= 250mA
2.5
3.0
V
GS
= 10V, I
D
= 1A
R
DS(ON)
Change in R
DS(ON)
with Temperature
0.70
1
%/C
V
GS
= 10V, I
D
= 1A
G
FS
Forward Transconductance
300
450
m
V
DS
= 25V, I
D
= 0.5A
C
ISS
Input Capacitance
55
65
C
OSS
Common Source Output Capacitance
20
25
pF
C
RSS
Reverse Transfer Capacitance
5
8
t
d(ON)
Turn-ON Delay Time
3
5
t
r
Rise Time
5
8
t
d(OFF)
Turn-OFF Delay Time
6
9
t
f
Fall Time
5
8
V
SD
Diode Forward Voltage Drop
1.2
1.8
V
V
GS
= 0V, I
SD
=1.0A
t
rr
Reverse Recovery Time
400
ns
V
GS
= 0V, I
SD
=1.0A
Notes:
1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Static Drain-to-Source
ON-State Resistance
V
V
GS
= 0V, I
D
= 1mA
Drain-to-Source
Breakdown Voltage
Electrical Characteristics
(@ 25C unless otherwise specified)
V
DD
= 25V
I
D
= 1A
R
GEN
= 25
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
03/26/02
2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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